FR2080967A1 - Diffusion-doped semiconductors - Google Patents

Diffusion-doped semiconductors

Info

Publication number
FR2080967A1
FR2080967A1 FR7103654A FR7103654A FR2080967A1 FR 2080967 A1 FR2080967 A1 FR 2080967A1 FR 7103654 A FR7103654 A FR 7103654A FR 7103654 A FR7103654 A FR 7103654A FR 2080967 A1 FR2080967 A1 FR 2080967A1
Authority
FR
France
Prior art keywords
diffusion
temp
doped semiconductors
working
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7103654A
Other languages
English (en)
French (fr)
Other versions
FR2080967B1 (cg-RX-API-DMAC7.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2080967A1 publication Critical patent/FR2080967A1/fr
Application granted granted Critical
Publication of FR2080967B1 publication Critical patent/FR2080967B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7103654A 1970-02-09 1971-01-27 Diffusion-doped semiconductors Granted FR2080967A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US975470A 1970-02-09 1970-02-09

Publications (2)

Publication Number Publication Date
FR2080967A1 true FR2080967A1 (en) 1971-11-26
FR2080967B1 FR2080967B1 (cg-RX-API-DMAC7.html) 1976-05-28

Family

ID=21739503

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7103654A Granted FR2080967A1 (en) 1970-02-09 1971-01-27 Diffusion-doped semiconductors

Country Status (3)

Country Link
JP (1) JPS4840298B1 (cg-RX-API-DMAC7.html)
DE (1) DE2102865A1 (cg-RX-API-DMAC7.html)
FR (1) FR2080967A1 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126096U (cg-RX-API-DMAC7.html) * 1975-04-07 1976-10-12
JPS6086325U (ja) * 1983-11-22 1985-06-14 ピジヨン株式会社 差込み便器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1377877A (fr) * 1962-12-20 1964-11-06 Westinghouse Electric Corp Dispositif de commutation à semi-conducteur
FR1551367A (cg-RX-API-DMAC7.html) * 1966-12-30 1968-12-27

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1377877A (fr) * 1962-12-20 1964-11-06 Westinghouse Electric Corp Dispositif de commutation à semi-conducteur
FR1551367A (cg-RX-API-DMAC7.html) * 1966-12-30 1968-12-27

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
(REVUE INTERNATIONALE"SOLID-STATE ELECTRONICS"VOLUME 10,AOUT 1967,"GLEICHZEITIGE DIFFUSION VON GA UND AS IN SILIZIUM AUS EINER CAAS-QUELLE"W.MONCH,PAGES 745-751. *
*REVUE JAPONAISE"SUPPLEMENT TO THE JOURNAL OF THE JAPAN SOCIETY OF APPLIED PHYSICS"VOLUME 39,1970) *
GA UND AS IN SILIZIUM AUS EINER CAAS-QUELLE"W.MONCH,PAGES 745-751. *
REVUE INTERNATIONALE"SOLID-STATE ELECTRONICS"VOLUME 10,AOUT 1967,"GLEICHZEITIGE DIFFUSION VON *
REVUE JAPONAISE"SUPPLEMENT *
TO THE JOURNAL OF THE JAPAN SOCIETY OF APPLIED PHYSICS"VOLUME 39,1970) *

Also Published As

Publication number Publication date
JPS4840298B1 (cg-RX-API-DMAC7.html) 1973-11-29
DE2102865A1 (de) 1971-08-26
FR2080967B1 (cg-RX-API-DMAC7.html) 1976-05-28

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Legal Events

Date Code Title Description
ST Notification of lapse