FR2080965A1 - - Google Patents

Info

Publication number
FR2080965A1
FR2080965A1 FR7036629A FR7036629A FR2080965A1 FR 2080965 A1 FR2080965 A1 FR 2080965A1 FR 7036629 A FR7036629 A FR 7036629A FR 7036629 A FR7036629 A FR 7036629A FR 2080965 A1 FR2080965 A1 FR 2080965A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7036629A
Other languages
French (fr)
Other versions
FR2080965B1 (is
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1037670A external-priority patent/JPS504310B1/ja
Priority claimed from JP1710370A external-priority patent/JPS505908B1/ja
Priority claimed from JP2082670A external-priority patent/JPS4940111B1/ja
Priority claimed from JP2562770A external-priority patent/JPS501871B1/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2080965A1 publication Critical patent/FR2080965A1/fr
Application granted granted Critical
Publication of FR2080965B1 publication Critical patent/FR2080965B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
FR7036629A 1970-02-07 1970-10-09 Expired FR2080965B1 (is)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1037670A JPS504310B1 (is) 1970-02-07 1970-02-07
JP1710370A JPS505908B1 (is) 1970-03-02 1970-03-02
JP2082670A JPS4940111B1 (is) 1970-03-13 1970-03-13
JP2562770A JPS501871B1 (is) 1970-03-28 1970-03-28

Publications (2)

Publication Number Publication Date
FR2080965A1 true FR2080965A1 (is) 1971-11-26
FR2080965B1 FR2080965B1 (is) 1976-05-28

Family

ID=27455384

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7036629A Expired FR2080965B1 (is) 1970-02-07 1970-10-09

Country Status (4)

Country Link
DE (1) DE2049696C3 (is)
FR (1) FR2080965B1 (is)
GB (1) GB1288029A (is)
NL (1) NL162512C (is)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2185858A1 (is) * 1972-05-22 1974-01-04 Ibm
FR2186734A1 (en) * 1972-05-29 1974-01-11 Radiotechnique Compelec Microwave semiconductor component production - by simultaneous multiple diffusion from doped insulation films

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697202A (en) * 1984-02-02 1987-09-29 Sri International Integrated circuit having dislocation free substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1378697A (fr) * 1963-01-04 1964-11-13 Westinghouse Electric Corp Redresseur commandé à semiconducteur
DE1208009B (de) * 1961-07-13 1965-12-30 Int Standard Electric Corp Verfahren zum Herstellen von versetzungsarmem einkristallinem Halbleitermaterial fuer ein Halbleiterbauelement mit pn-UEbergang

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT243318B (de) * 1962-09-21 1965-11-10 Siemens Ag Verfahren zur Herstellung hoher Dotierungsgrade in Halbleiterstoffen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208009B (de) * 1961-07-13 1965-12-30 Int Standard Electric Corp Verfahren zum Herstellen von versetzungsarmem einkristallinem Halbleitermaterial fuer ein Halbleiterbauelement mit pn-UEbergang
FR1378697A (fr) * 1963-01-04 1964-11-13 Westinghouse Electric Corp Redresseur commandé à semiconducteur

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE"JOURNAL OF THE ELECTROCHEMICAL SOCIETY"VOL 117,NO.3,MARS 1970,ABSTRACT NO.118 :"STRAIN-FREE DIFFUSION TECHNIQUE FOR SILICON",T.KATO,ET AL.PAGE 990.) *
:"STRAIN-FREE DIFFUSION TECHNIQUE FOR SILICON",T.KATO,ET AL.PAGE 990.) *
REVUE AMERICAINE"JOURNAL OF THE ELECTROCHEMICAL SOCIETY"VOL 117,NO.3,MARS 1970,ABSTRACT NO.118 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2185858A1 (is) * 1972-05-22 1974-01-04 Ibm
FR2186734A1 (en) * 1972-05-29 1974-01-11 Radiotechnique Compelec Microwave semiconductor component production - by simultaneous multiple diffusion from doped insulation films

Also Published As

Publication number Publication date
NL7014842A (is) 1971-08-10
DE2049696C3 (de) 1982-02-18
DE2049696B2 (de) 1981-06-11
NL162512C (nl) 1980-05-16
NL162512B (nl) 1979-12-17
GB1288029A (is) 1972-09-06
FR2080965B1 (is) 1976-05-28
DE2049696A1 (de) 1971-08-26

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