FR2072084B1 - - Google Patents

Info

Publication number
FR2072084B1
FR2072084B1 FR7041265A FR7041265A FR2072084B1 FR 2072084 B1 FR2072084 B1 FR 2072084B1 FR 7041265 A FR7041265 A FR 7041265A FR 7041265 A FR7041265 A FR 7041265A FR 2072084 B1 FR2072084 B1 FR 2072084B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7041265A
Other languages
French (fr)
Other versions
FR2072084A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2072084A1 publication Critical patent/FR2072084A1/fr
Application granted granted Critical
Publication of FR2072084B1 publication Critical patent/FR2072084B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H10P95/00—
    • H10W10/031—
    • H10W10/30—
    • H10W20/40—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry
FR7041265A 1969-12-29 1970-11-09 Expired FR2072084B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88842869A 1969-12-29 1969-12-29

Publications (2)

Publication Number Publication Date
FR2072084A1 FR2072084A1 (enExample) 1971-09-24
FR2072084B1 true FR2072084B1 (enExample) 1975-10-10

Family

ID=25393158

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7041265A Expired FR2072084B1 (enExample) 1969-12-29 1970-11-09

Country Status (8)

Country Link
US (1) US3622842A (enExample)
BE (1) BE760916A (enExample)
CH (1) CH514235A (enExample)
DE (1) DE2063952A1 (enExample)
FR (1) FR2072084B1 (enExample)
GB (1) GB1305988A (enExample)
NL (1) NL7018765A (enExample)
SE (1) SE371331B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769105A (en) * 1970-01-26 1973-10-30 Ibm Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor
US3858231A (en) * 1973-04-16 1974-12-31 Ibm Dielectrically isolated schottky barrier structure and method of forming the same
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
DE2351985A1 (de) * 1973-10-17 1975-04-30 Itt Ind Gmbh Deutsche Planardiffusionsverfahren zum herstellen einer monolithisch integrierten festkoerperschaltung
US4079408A (en) * 1975-12-31 1978-03-14 International Business Machines Corporation Semiconductor structure with annular collector/subcollector region
US4066483A (en) * 1976-07-07 1978-01-03 Western Electric Company, Inc. Gate-controlled bidirectional switching device
US4272882A (en) * 1980-05-08 1981-06-16 Rca Corporation Method of laying out an integrated circuit with specific alignment of the collector contact with the emitter region
US4380774A (en) * 1980-12-19 1983-04-19 The United States Of America As Represented By The Secretary Of The Navy High-performance bipolar microwave transistor
JPS6170758A (ja) * 1984-09-06 1986-04-11 シーメンス、アクチエンゲゼルシヤフト トランジスタ構造
US4644383A (en) * 1985-04-08 1987-02-17 Harris Corporation Subcollector for oxide and junction isolated IC's
US4902633A (en) * 1988-05-09 1990-02-20 Motorola, Inc. Process for making a bipolar integrated circuit
GB9013926D0 (en) * 1990-06-22 1990-08-15 Gen Electric Co Plc A vertical pnp transistor
JP3285435B2 (ja) * 1993-07-07 2002-05-27 三菱電機株式会社 半導体装置およびその製造方法
US20090072355A1 (en) * 2007-09-17 2009-03-19 International Business Machines Corporation Dual shallow trench isolation structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1573404A (enExample) * 1967-08-02 1969-07-04
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes

Also Published As

Publication number Publication date
BE760916A (fr) 1971-06-28
NL7018765A (enExample) 1971-07-01
DE2063952A1 (de) 1971-07-15
SE371331B (enExample) 1974-11-11
US3622842A (en) 1971-11-23
FR2072084A1 (enExample) 1971-09-24
GB1305988A (enExample) 1973-02-07
CH514235A (de) 1971-10-15

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Legal Events

Date Code Title Description
ST Notification of lapse