FR2067335A1 - - Google Patents

Info

Publication number
FR2067335A1
FR2067335A1 FR7041000A FR7041000A FR2067335A1 FR 2067335 A1 FR2067335 A1 FR 2067335A1 FR 7041000 A FR7041000 A FR 7041000A FR 7041000 A FR7041000 A FR 7041000A FR 2067335 A1 FR2067335 A1 FR 2067335A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7041000A
Other languages
French (fr)
Other versions
FR2067335B1 (cg-RX-API-DMAC10.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INST HALVLEDARFORS
Original Assignee
INST HALVLEDARFORS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INST HALVLEDARFORS filed Critical INST HALVLEDARFORS
Publication of FR2067335A1 publication Critical patent/FR2067335A1/fr
Application granted granted Critical
Publication of FR2067335B1 publication Critical patent/FR2067335B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W74/40—
    • H10W74/43—
FR7041000A 1969-11-17 1970-11-16 Expired FR2067335B1 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE15739/69A SE337430B (cg-RX-API-DMAC10.html) 1969-11-17 1969-11-17

Publications (2)

Publication Number Publication Date
FR2067335A1 true FR2067335A1 (cg-RX-API-DMAC10.html) 1971-08-20
FR2067335B1 FR2067335B1 (cg-RX-API-DMAC10.html) 1974-09-20

Family

ID=20301165

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7041000A Expired FR2067335B1 (cg-RX-API-DMAC10.html) 1969-11-17 1970-11-16

Country Status (6)

Country Link
US (1) US3638078A (cg-RX-API-DMAC10.html)
JP (1) JPS4822308B1 (cg-RX-API-DMAC10.html)
DE (1) DE2056277A1 (cg-RX-API-DMAC10.html)
FR (1) FR2067335B1 (cg-RX-API-DMAC10.html)
GB (1) GB1323443A (cg-RX-API-DMAC10.html)
SE (1) SE337430B (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840809A (en) * 1972-12-04 1974-10-08 Ibm Non-destructive measurement of dielectric properties
JPS51152707U (cg-RX-API-DMAC10.html) * 1975-05-29 1976-12-06
JP2561413B2 (ja) * 1993-02-23 1996-12-11 日産自動車株式会社 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6807032A (cg-RX-API-DMAC10.html) * 1967-05-19 1968-11-20
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3202891A (en) * 1960-11-30 1965-08-24 Gen Telephone & Elect Voltage variable capacitor with strontium titanate dielectric
DE1514398A1 (de) * 1965-02-09 1969-09-11 Siemens Ag Halbleiteranordnung
US3512052A (en) * 1968-01-11 1970-05-12 Gen Motors Corp Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6807032A (cg-RX-API-DMAC10.html) * 1967-05-19 1968-11-20
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device

Also Published As

Publication number Publication date
JPS4822308B1 (cg-RX-API-DMAC10.html) 1973-07-05
US3638078A (en) 1972-01-25
DE2056277A1 (de) 1971-05-27
FR2067335B1 (cg-RX-API-DMAC10.html) 1974-09-20
SE337430B (cg-RX-API-DMAC10.html) 1971-08-09
GB1323443A (en) 1973-07-18

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Legal Events

Date Code Title Description
ST Notification of lapse