FR2061685B1 - - Google Patents
Info
- Publication number
- FR2061685B1 FR2061685B1 FR7032896A FR7032896A FR2061685B1 FR 2061685 B1 FR2061685 B1 FR 2061685B1 FR 7032896 A FR7032896 A FR 7032896A FR 7032896 A FR7032896 A FR 7032896A FR 2061685 B1 FR2061685 B1 FR 2061685B1
- Authority
- FR
- France
- Prior art keywords
- substrate
- layer
- sept
- semi
- base plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910017709 Ni Co Inorganic materials 0.000 abstract 1
- 229910003267 Ni-Co Inorganic materials 0.000 abstract 1
- 229910003262 Ni‐Co Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2924/01005—Boron [B]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01023—Vanadium [V]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01028—Nickel [Ni]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01079—Gold [Au]
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- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6913958.A NL160682C (nl) | 1969-09-12 | 1969-09-12 | Veldeffecttransistor met geisoleerde stuurelektrode in omhulling. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2061685A1 FR2061685A1 (ja) | 1971-06-25 |
FR2061685B1 true FR2061685B1 (ja) | 1974-03-22 |
Family
ID=19807901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7032896A Expired FR2061685B1 (ja) | 1969-09-12 | 1970-09-10 |
Country Status (8)
Country | Link |
---|---|
AT (1) | AT336081B (ja) |
BE (1) | BE756002A (ja) |
CH (1) | CH506888A (ja) |
DE (1) | DE2043298A1 (ja) |
FR (1) | FR2061685B1 (ja) |
GB (1) | GB1322511A (ja) |
NL (1) | NL160682C (ja) |
SE (1) | SE363542B (ja) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3356858A (en) * | 1963-06-18 | 1967-12-05 | Fairchild Camera Instr Co | Low stand-by power complementary field effect circuitry |
US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
-
0
- BE BE756002D patent/BE756002A/xx not_active IP Right Cessation
-
1969
- 1969-09-12 NL NL6913958.A patent/NL160682C/xx active
-
1970
- 1970-09-01 DE DE19702043298 patent/DE2043298A1/de not_active Ceased
- 1970-09-09 SE SE12274/70A patent/SE363542B/xx unknown
- 1970-09-09 CH CH1344370A patent/CH506888A/de not_active IP Right Cessation
- 1970-09-09 AT AT817070A patent/AT336081B/de active
- 1970-09-09 GB GB4314970A patent/GB1322511A/en not_active Expired
- 1970-09-10 FR FR7032896A patent/FR2061685B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2043298A1 (de) | 1971-03-18 |
BE756002A (fr) | 1971-03-10 |
NL160682C (nl) | 1979-11-15 |
NL6913958A (ja) | 1971-03-16 |
AT336081B (de) | 1977-04-12 |
SE363542B (ja) | 1974-01-21 |
ATA817070A (de) | 1976-08-15 |
GB1322511A (en) | 1973-07-04 |
CH506888A (de) | 1971-04-30 |
FR2061685A1 (ja) | 1971-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |