FR2053238A1 - - Google Patents

Info

Publication number
FR2053238A1
FR2053238A1 FR7027626A FR7027626A FR2053238A1 FR 2053238 A1 FR2053238 A1 FR 2053238A1 FR 7027626 A FR7027626 A FR 7027626A FR 7027626 A FR7027626 A FR 7027626A FR 2053238 A1 FR2053238 A1 FR 2053238A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7027626A
Other versions
FR2053238B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of FR2053238A1 publication Critical patent/FR2053238A1/fr
Application granted granted Critical
Publication of FR2053238B1 publication Critical patent/FR2053238B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/002—Scale prevention in a polymerisation reactor or its auxiliary parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Element Separation (AREA)
FR7027626A 1969-07-29 1970-07-27 Expired FR2053238B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84582269A 1969-07-29 1969-07-29

Publications (2)

Publication Number Publication Date
FR2053238A1 true FR2053238A1 (fr) 1971-04-16
FR2053238B1 FR2053238B1 (fr) 1974-10-31

Family

ID=25296163

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7027626A Expired FR2053238B1 (fr) 1969-07-29 1970-07-27

Country Status (9)

Country Link
JP (1) JPS5619095B1 (fr)
AU (1) AU1492370A (fr)
BE (1) BE754061A (fr)
CH (1) CH519252A (fr)
DE (1) DE2035285A1 (fr)
ES (1) ES381695A1 (fr)
FR (1) FR2053238B1 (fr)
GB (1) GB1300768A (fr)
NL (1) NL7009356A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2443742A1 (fr) * 1978-12-04 1980-07-04 Ates Componenti Elettron Perfectionnement apporte au procede pour la production de transistors bipolaires integres a tension elevee de rupture collecteur-emetteur et produit ainsi obtenu
EP0230508A2 (fr) * 1985-12-20 1987-08-05 Licentia Patent-Verwaltungs-GmbH Corps semi-conducteur structuré

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1146943A (en) * 1966-02-09 1969-03-26 Sony Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1146943A (en) * 1966-02-09 1969-03-26 Sony Corp Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2443742A1 (fr) * 1978-12-04 1980-07-04 Ates Componenti Elettron Perfectionnement apporte au procede pour la production de transistors bipolaires integres a tension elevee de rupture collecteur-emetteur et produit ainsi obtenu
EP0230508A2 (fr) * 1985-12-20 1987-08-05 Licentia Patent-Verwaltungs-GmbH Corps semi-conducteur structuré
EP0230508A3 (en) * 1985-12-20 1987-08-19 Licentia Patent-Verwaltungs-Gmbh Structured semiconductor body
US4912538A (en) * 1985-12-20 1990-03-27 Licentia Patent-Verwaltungs Gmbh Structured semiconductor body
US4935375A (en) * 1985-12-20 1990-06-19 Licentia Patent-Verwaltungs-Gmbh Method of making a semiconductor device

Also Published As

Publication number Publication date
FR2053238B1 (fr) 1974-10-31
AU1492370A (en) 1971-11-18
DE2035285A1 (de) 1971-02-11
GB1300768A (en) 1972-12-20
NL7009356A (fr) 1971-02-02
BE754061A (fr) 1970-12-31
CH519252A (de) 1972-02-15
JPS5619095B1 (fr) 1981-05-06
ES381695A1 (es) 1972-12-01

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Legal Events

Date Code Title Description
ST Notification of lapse