AU1492370A - Process and structure for electrical isolation in integrated circuits - Google Patents

Process and structure for electrical isolation in integrated circuits

Info

Publication number
AU1492370A
AU1492370A AU14923/70A AU1492370A AU1492370A AU 1492370 A AU1492370 A AU 1492370A AU 14923/70 A AU14923/70 A AU 14923/70A AU 1492370 A AU1492370 A AU 1492370A AU 1492370 A AU1492370 A AU 1492370A
Authority
AU
Australia
Prior art keywords
integrated circuits
electrical isolation
isolation
electrical
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU14923/70A
Inventor
NORMAN TUCKER and MICHAEL LEE BARRY ROSS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of AU1492370A publication Critical patent/AU1492370A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/002—Scale prevention in a polymerisation reactor or its auxiliary parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
  • Element Separation (AREA)
AU14923/70A 1969-07-29 1970-05-11 Process and structure for electrical isolation in integrated circuits Expired AU1492370A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84582269A 1969-07-29 1969-07-29
USUS845,822 1969-07-29

Publications (1)

Publication Number Publication Date
AU1492370A true AU1492370A (en) 1971-11-18

Family

ID=25296163

Family Applications (1)

Application Number Title Priority Date Filing Date
AU14923/70A Expired AU1492370A (en) 1969-07-29 1970-05-11 Process and structure for electrical isolation in integrated circuits

Country Status (9)

Country Link
JP (1) JPS5619095B1 (en)
AU (1) AU1492370A (en)
BE (1) BE754061A (en)
CH (1) CH519252A (en)
DE (1) DE2035285A1 (en)
ES (1) ES381695A1 (en)
FR (1) FR2053238B1 (en)
GB (1) GB1300768A (en)
NL (1) NL7009356A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1101183B (en) * 1978-12-04 1985-09-28 Ates Componenti Elettron IMPROVEMENT IN THE PRODUCTION PROCESS FOR BIPOLAR TRANSISTORS INTAGRATED WITH HIGH BREAKDOWN VOLTAGE COLLECTOR-EMITTER AND RESULTING PRODUCT
DE3545244A1 (en) * 1985-12-20 1987-06-25 Licentia Gmbh STRUCTURED SEMICONDUCTOR BODY

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475661A (en) * 1966-02-09 1969-10-28 Sony Corp Semiconductor device including polycrystalline areas among monocrystalline areas

Also Published As

Publication number Publication date
FR2053238A1 (en) 1971-04-16
FR2053238B1 (en) 1974-10-31
DE2035285A1 (en) 1971-02-11
ES381695A1 (en) 1972-12-01
JPS5619095B1 (en) 1981-05-06
NL7009356A (en) 1971-02-02
CH519252A (en) 1972-02-15
GB1300768A (en) 1972-12-20
BE754061A (en) 1970-12-31

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