FR2047058B1 - - Google Patents

Info

Publication number
FR2047058B1
FR2047058B1 FR7023009A FR7023009A FR2047058B1 FR 2047058 B1 FR2047058 B1 FR 2047058B1 FR 7023009 A FR7023009 A FR 7023009A FR 7023009 A FR7023009 A FR 7023009A FR 2047058 B1 FR2047058 B1 FR 2047058B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7023009A
Other versions
FR2047058A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of FR2047058A1 publication Critical patent/FR2047058A1/fr
Application granted granted Critical
Publication of FR2047058B1 publication Critical patent/FR2047058B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/013—Modifications for accelerating switching in bipolar transistor circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
FR7023009A 1969-06-23 1970-06-22 Expired FR2047058B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83549569A 1969-06-23 1969-06-23

Publications (2)

Publication Number Publication Date
FR2047058A1 FR2047058A1 (fr) 1971-03-12
FR2047058B1 true FR2047058B1 (fr) 1975-01-10

Family

ID=25269646

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7023009A Expired FR2047058B1 (fr) 1969-06-23 1970-06-22

Country Status (4)

Country Link
US (1) US3624620A (fr)
DE (1) DE2031038C3 (fr)
FR (1) FR2047058B1 (fr)
GB (1) GB1311683A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740730A (en) * 1971-06-30 1973-06-19 Ibm Latchable decoder driver and memory array
US3732440A (en) * 1971-12-23 1973-05-08 Ibm Address decoder latch
US3757310A (en) * 1972-01-03 1973-09-04 Honeywell Inf Systems Memory address selction apparatus including isolation circuits
US3914628A (en) * 1972-10-27 1975-10-21 Raytheon Co T-T-L driver circuitry
US3999080A (en) * 1974-12-23 1976-12-21 Texas Instruments Inc. Transistor coupled logic circuit
US3959671A (en) * 1975-06-20 1976-05-25 The United States Of America As Represented By The Secretary Of The Navy High current pulser circuit
DE2648425A1 (de) * 1976-10-26 1978-04-27 Itt Ind Gmbh Deutsche Binaere logische grundschaltung
US4156291A (en) * 1977-07-08 1979-05-22 Xerox Corporation Circuitry for eliminating double ram row addressing
JPS55146680A (en) * 1979-04-26 1980-11-15 Fujitsu Ltd Decoding circuit
US4409675A (en) * 1980-12-22 1983-10-11 Fairchild Camera & Instrument Corporation Address gate for memories to protect stored data, and to simplify memory testing, and method of use thereof
US4424455A (en) * 1982-04-22 1984-01-03 Motorola, Inc. Glitch eliminating data selector

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1039567B (de) * 1956-10-05 1958-09-25 Ibm Deutschland Aus bistabilen Magnetkernen bestehende Schaltmatrix
US3177373A (en) * 1960-10-28 1965-04-06 Richard H Graham Transistorized loading circuit
US3176144A (en) * 1960-11-16 1965-03-30 Ncr Co Selective signaling system
US3313949A (en) * 1963-06-25 1967-04-11 James J Nyberg Magnetic core driver and inhibit circuit
US3436738A (en) * 1966-06-28 1969-04-01 Texas Instruments Inc Plural emitter type active element memory

Also Published As

Publication number Publication date
GB1311683A (en) 1973-03-28
DE2031038A1 (de) 1971-01-14
FR2047058A1 (fr) 1971-03-12
DE2031038B2 (fr) 1979-02-22
US3624620A (en) 1971-11-30
DE2031038C3 (de) 1979-10-18

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Legal Events

Date Code Title Description
ST Notification of lapse