FR2045816A1 - - Google Patents
Info
- Publication number
- FR2045816A1 FR2045816A1 FR7020318A FR7020318A FR2045816A1 FR 2045816 A1 FR2045816 A1 FR 2045816A1 FR 7020318 A FR7020318 A FR 7020318A FR 7020318 A FR7020318 A FR 7020318A FR 2045816 A1 FR2045816 A1 FR 2045816A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/144—Shallow diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/958—Passivation layer
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83082269A | 1969-06-05 | 1969-06-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2045816A1 true FR2045816A1 (show.php) | 1971-03-05 |
| FR2045816B1 FR2045816B1 (show.php) | 1975-02-21 |
Family
ID=25257756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7020318A Expired FR2045816B1 (show.php) | 1969-06-05 | 1970-06-03 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3615942A (show.php) |
| JP (1) | JPS4838098B1 (show.php) |
| DE (1) | DE2027589A1 (show.php) |
| FR (1) | FR2045816B1 (show.php) |
| GB (1) | GB1317331A (show.php) |
| NL (1) | NL7008144A (show.php) |
| SE (1) | SE362537B (show.php) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3755015A (en) * | 1971-12-10 | 1973-08-28 | Gen Electric | Anti-reflection coating for semiconductor diode array targets |
| US3839104A (en) * | 1972-08-31 | 1974-10-01 | Texas Instruments Inc | Fabrication technique for high performance semiconductor devices |
| US3943015A (en) * | 1973-06-29 | 1976-03-09 | International Business Machines Corporation | Method for high temperature semiconductor processing |
| JPS5266377A (en) * | 1975-11-29 | 1977-06-01 | Toshiba Corp | Manufacture of semiconductor device |
| JPS5279777A (en) * | 1975-12-26 | 1977-07-05 | Toshiba Corp | Production of semiconductor device |
| JPS5530846A (en) * | 1978-08-28 | 1980-03-04 | Hitachi Ltd | Method for manufacturing fixed memory |
| JPS5534444A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Preparation of semiconductor device |
| NL8701357A (nl) * | 1987-06-11 | 1989-01-02 | Philips Nv | Halfgeleiderinrichting bevattende een condensator en een begraven passiveringslaag. |
| EP1190446A1 (de) * | 1999-06-28 | 2002-03-27 | Unaxis Balzers Aktiengesellschaft | Bauteil und verfahren zu dessen herstellung |
| US6582633B2 (en) | 2001-01-17 | 2003-06-24 | Akzo Nobel N.V. | Process for producing objects |
| SG10202010798QA (en) * | 2019-11-08 | 2021-06-29 | Tokyo Electron Ltd | Etching method and plasma processing apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1501444A (fr) * | 1965-11-23 | 1967-11-10 | Siemens Ag | Procédé pour fabriquer des micro-composants à semi-conducteurs par la technique planar |
| FR1516618A (fr) * | 1966-03-23 | 1968-03-08 | Matsushita Electronics Corp | Procédé pour la fabrication d'un élément semi-conducteur |
| FR1543785A (fr) * | 1966-12-28 | 1968-09-16 | Ibm | Attaque des revêtements de semi-conducteur |
-
1969
- 1969-06-05 US US830822A patent/US3615942A/en not_active Expired - Lifetime
-
1970
- 1970-05-26 GB GB2516070A patent/GB1317331A/en not_active Expired
- 1970-06-03 FR FR7020318A patent/FR2045816B1/fr not_active Expired
- 1970-06-03 SE SE07695/70A patent/SE362537B/xx unknown
- 1970-06-04 NL NL7008144A patent/NL7008144A/xx unknown
- 1970-06-04 DE DE19702027589 patent/DE2027589A1/de active Pending
- 1970-06-04 JP JP45048378A patent/JPS4838098B1/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1501444A (fr) * | 1965-11-23 | 1967-11-10 | Siemens Ag | Procédé pour fabriquer des micro-composants à semi-conducteurs par la technique planar |
| FR1516618A (fr) * | 1966-03-23 | 1968-03-08 | Matsushita Electronics Corp | Procédé pour la fabrication d'un élément semi-conducteur |
| FR1543785A (fr) * | 1966-12-28 | 1968-09-16 | Ibm | Attaque des revêtements de semi-conducteur |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4838098B1 (show.php) | 1973-11-15 |
| SE362537B (show.php) | 1973-12-10 |
| GB1317331A (en) | 1973-05-16 |
| US3615942A (en) | 1971-10-26 |
| FR2045816B1 (show.php) | 1975-02-21 |
| DE2027589A1 (de) | 1970-12-10 |
| NL7008144A (show.php) | 1970-12-08 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |