FR2022439A1 - - Google Patents

Info

Publication number
FR2022439A1
FR2022439A1 FR6936776A FR6936776A FR2022439A1 FR 2022439 A1 FR2022439 A1 FR 2022439A1 FR 6936776 A FR6936776 A FR 6936776A FR 6936776 A FR6936776 A FR 6936776A FR 2022439 A1 FR2022439 A1 FR 2022439A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR6936776A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2022439A1 publication Critical patent/FR2022439A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
FR6936776A 1968-11-02 1969-10-27 Withdrawn FR2022439A1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6815661A NL6815661A (OSRAM) 1968-11-02 1968-11-02

Publications (1)

Publication Number Publication Date
FR2022439A1 true FR2022439A1 (OSRAM) 1970-07-31

Family

ID=19805058

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6936776A Withdrawn FR2022439A1 (OSRAM) 1968-11-02 1969-10-27

Country Status (8)

Country Link
US (1) US3643139A (OSRAM)
AT (1) AT311418B (OSRAM)
BE (1) BE741146A (OSRAM)
CH (1) CH508279A (OSRAM)
ES (1) ES373065A1 (OSRAM)
FR (1) FR2022439A1 (OSRAM)
GB (1) GB1282616A (OSRAM)
NL (1) NL6815661A (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4680605A (en) * 1984-03-12 1987-07-14 Xerox Corporation High voltage depletion mode transistor with serpentine current path
US5309006A (en) * 1991-11-05 1994-05-03 Itt Corporation FET crossbar switch device particularly useful for microwave applications
US5258638A (en) * 1992-08-13 1993-11-02 Xerox Corporation Thermal ink jet power MOS device design/layout
AU2001233958A1 (en) * 2000-03-02 2001-09-12 Accentus Plc Chemical sensor
JP2002198439A (ja) * 2000-12-26 2002-07-12 Sharp Corp 半導体装置および携帯電子機器
JP4469584B2 (ja) * 2003-09-12 2010-05-26 株式会社東芝 半導体装置
CN101315950A (zh) * 2007-05-30 2008-12-03 北京京东方光电科技有限公司 一种薄膜晶体管充电沟道结构
CN110728267B (zh) * 2019-11-15 2024-08-09 京东方科技集团股份有限公司 显示基板及其制作方法、显示面板和显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3378688A (en) * 1965-02-24 1968-04-16 Fairchild Camera Instr Co Photosensitive diode array accessed by a metal oxide switch utilizing overlapping and traveling inversion regions
US3440502A (en) * 1966-07-05 1969-04-22 Westinghouse Electric Corp Insulated gate field effect transistor structure with reduced current leakage
GB1188535A (en) * 1966-08-25 1970-04-15 Plessey Co Ltd Improvements in or relating to Signal Correlators

Also Published As

Publication number Publication date
NL6815661A (OSRAM) 1970-05-06
AT311418B (de) 1973-11-12
DE1954444A1 (de) 1970-05-06
ES373065A1 (es) 1971-11-16
DE1954444B2 (de) 1977-07-14
US3643139A (en) 1972-02-15
GB1282616A (en) 1972-07-19
BE741146A (OSRAM) 1970-04-30
CH508279A (de) 1971-05-31

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Legal Events

Date Code Title Description
ST Notification of lapse