BE741146A - - Google Patents
Info
- Publication number
- BE741146A BE741146A BE741146DA BE741146A BE 741146 A BE741146 A BE 741146A BE 741146D A BE741146D A BE 741146DA BE 741146 A BE741146 A BE 741146A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6815661A NL6815661A (OSRAM) | 1968-11-02 | 1968-11-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE741146A true BE741146A (OSRAM) | 1970-04-30 |
Family
ID=19805058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE741146D BE741146A (OSRAM) | 1968-11-02 | 1969-10-31 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3643139A (OSRAM) |
| AT (1) | AT311418B (OSRAM) |
| BE (1) | BE741146A (OSRAM) |
| CH (1) | CH508279A (OSRAM) |
| ES (1) | ES373065A1 (OSRAM) |
| FR (1) | FR2022439A1 (OSRAM) |
| GB (1) | GB1282616A (OSRAM) |
| NL (1) | NL6815661A (OSRAM) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4680605A (en) * | 1984-03-12 | 1987-07-14 | Xerox Corporation | High voltage depletion mode transistor with serpentine current path |
| US5309006A (en) * | 1991-11-05 | 1994-05-03 | Itt Corporation | FET crossbar switch device particularly useful for microwave applications |
| US5258638A (en) * | 1992-08-13 | 1993-11-02 | Xerox Corporation | Thermal ink jet power MOS device design/layout |
| AU2001233958A1 (en) * | 2000-03-02 | 2001-09-12 | Accentus Plc | Chemical sensor |
| JP2002198439A (ja) * | 2000-12-26 | 2002-07-12 | Sharp Corp | 半導体装置および携帯電子機器 |
| JP4469584B2 (ja) * | 2003-09-12 | 2010-05-26 | 株式会社東芝 | 半導体装置 |
| CN101315950A (zh) * | 2007-05-30 | 2008-12-03 | 北京京东方光电科技有限公司 | 一种薄膜晶体管充电沟道结构 |
| CN110728267B (zh) * | 2019-11-15 | 2024-08-09 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示面板和显示装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3378688A (en) * | 1965-02-24 | 1968-04-16 | Fairchild Camera Instr Co | Photosensitive diode array accessed by a metal oxide switch utilizing overlapping and traveling inversion regions |
| US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
| GB1188535A (en) * | 1966-08-25 | 1970-04-15 | Plessey Co Ltd | Improvements in or relating to Signal Correlators |
-
1968
- 1968-11-02 NL NL6815661A patent/NL6815661A/xx unknown
-
1969
- 1969-10-27 FR FR6936776A patent/FR2022439A1/fr not_active Withdrawn
- 1969-10-29 US US872192A patent/US3643139A/en not_active Expired - Lifetime
- 1969-10-30 CH CH1618169A patent/CH508279A/de not_active IP Right Cessation
- 1969-10-30 GB GB53204/69A patent/GB1282616A/en not_active Expired
- 1969-10-30 AT AT1021569A patent/AT311418B/de not_active IP Right Cessation
- 1969-10-31 BE BE741146D patent/BE741146A/xx unknown
- 1969-10-31 ES ES373065A patent/ES373065A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL6815661A (OSRAM) | 1970-05-06 |
| AT311418B (de) | 1973-11-12 |
| DE1954444A1 (de) | 1970-05-06 |
| ES373065A1 (es) | 1971-11-16 |
| DE1954444B2 (de) | 1977-07-14 |
| US3643139A (en) | 1972-02-15 |
| GB1282616A (en) | 1972-07-19 |
| FR2022439A1 (OSRAM) | 1970-07-31 |
| CH508279A (de) | 1971-05-31 |