FR1573306A - - Google Patents

Info

Publication number
FR1573306A
FR1573306A FR1573306DA FR1573306A FR 1573306 A FR1573306 A FR 1573306A FR 1573306D A FR1573306D A FR 1573306DA FR 1573306 A FR1573306 A FR 1573306A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1573306A publication Critical patent/FR1573306A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors with potential-jump barrier or surface barrier
    • H01L29/93Variable capacitance diodes, e.g. varactors
FR1573306D 1967-05-26 1968-05-27 Expired FR1573306A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2476267 1967-05-26

Publications (1)

Publication Number Publication Date
FR1573306A true FR1573306A (nl) 1969-07-04

Family

ID=10216859

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1573306D Expired FR1573306A (nl) 1967-05-26 1968-05-27

Country Status (6)

Country Link
CH (1) CH474158A (nl)
DE (1) DE1764372C3 (nl)
FR (1) FR1573306A (nl)
GB (1) GB1228754A (nl)
NL (1) NL151558B (nl)
SE (1) SE352196B (nl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2133978A1 (de) * 1970-07-10 1972-01-13 Philips Nv Verfahren zur Herstellung einer Halb leiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung
FR2096876A1 (nl) * 1970-07-09 1972-03-03 Thomson Csf

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1263009A (en) * 1969-03-31 1972-02-09 Tokyo Shibaura Electric Co A method for manufacturing a semiconductor device and such device prepared thereby
GB1332932A (en) * 1970-01-15 1973-10-10 Mullard Ltd Methods of manufacturing a semiconductor device
GB1355806A (en) * 1970-12-09 1974-06-05 Mullard Ltd Methods of manufacturing a semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2096876A1 (nl) * 1970-07-09 1972-03-03 Thomson Csf
DE2133978A1 (de) * 1970-07-10 1972-01-13 Philips Nv Verfahren zur Herstellung einer Halb leiteranordnung und durch dieses Verfahren hergestellte Halbleiteranordnung
FR2098321A1 (nl) * 1970-07-10 1972-03-10 Philips Nv

Also Published As

Publication number Publication date
DE1764372B2 (de) 1974-06-12
NL6807438A (nl) 1968-11-27
GB1228754A (nl) 1971-04-21
SE352196B (nl) 1972-12-18
NL151558B (nl) 1976-11-15
DE1764372A1 (de) 1972-04-20
CH474158A (de) 1969-06-15
DE1764372C3 (de) 1975-01-16

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Legal Events

Date Code Title Description
ST Notification of lapse