FR1566090A - - Google Patents

Info

Publication number
FR1566090A
FR1566090A FR1566090DA FR1566090A FR 1566090 A FR1566090 A FR 1566090A FR 1566090D A FR1566090D A FR 1566090DA FR 1566090 A FR1566090 A FR 1566090A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1566090A publication Critical patent/FR1566090A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0029—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rotating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y10T225/12—With preliminary weakening
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49789—Obtaining plural product pieces from unitary workpiece
    • Y10T29/4979—Breaking through weakened portion

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
FR1566090D 1967-05-29 1968-05-28 Expired FR1566090A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0110050 1967-05-29

Publications (1)

Publication Number Publication Date
FR1566090A true FR1566090A (fr) 1969-05-02

Family

ID=7529949

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1566090D Expired FR1566090A (fr) 1967-05-29 1968-05-28

Country Status (5)

Country Link
US (1) US3542266A (fr)
DE (1) DE1652512B2 (fr)
FR (1) FR1566090A (fr)
GB (1) GB1170016A (fr)
NL (1) NL6803086A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2046933A1 (fr) * 1969-06-20 1971-03-12 Siemens Ag
FR2062986A1 (fr) * 1969-09-24 1971-07-02 Omron Tateisi Electronics Co
EP0402230A1 (fr) * 1989-06-07 1990-12-12 Commissariat A L'energie Atomique Procédé et dispositif de marquage et de clivage de plaquettes de matériaux semiconducteurs monocristallins
WO1991008592A1 (fr) * 1989-11-21 1991-06-13 Eastman Kodak Company Separation amelioree des reseaux de diodes
WO1991008591A1 (fr) * 1989-11-21 1991-06-13 Eastman Kodak Company Separation des puces des reseaux de diodes au cours de leur fabrication
US5053836A (en) * 1989-11-21 1991-10-01 Eastman Kodak Company Cleaving of diode arrays with scribing channels

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816906A (en) * 1969-06-20 1974-06-18 Siemens Ag Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components
US3934331A (en) * 1972-03-21 1976-01-27 Hitachi, Ltd. Method of manufacturing semiconductor devices
US3901423A (en) * 1973-11-26 1975-08-26 Purdue Research Foundation Method for fracturing crystalline materials
US4301838A (en) * 1977-01-06 1981-11-24 Domtar Inc. Modular conduit unit
US4247031A (en) * 1979-04-10 1981-01-27 Rca Corporation Method for cracking and separating pellets formed on a wafer
JPS6041478B2 (ja) * 1979-09-10 1985-09-17 富士通株式会社 半導体レ−ザ素子の製造方法
US4814296A (en) * 1987-08-28 1989-03-21 Xerox Corporation Method of fabricating image sensor dies for use in assembling arrays
JPH07100615B2 (ja) * 1988-03-29 1995-11-01 和郎 佐藤 ガラス加工物切断装置
US5174072A (en) * 1990-01-30 1992-12-29 Massachusetts Institute Of Technology Optical surface polishing method
US5095664A (en) * 1990-01-30 1992-03-17 Massachusetts Institute Of Technology Optical surface polishing method
DE4132232A1 (de) * 1991-09-27 1993-04-01 Bosch Gmbh Robert Verfahren zur herstellung kapazitiver sensoren und kapazitiver sensor
US5413659A (en) * 1993-09-30 1995-05-09 Minnesota Mining And Manufacturing Company Array of conductive pathways
US5418190A (en) * 1993-12-30 1995-05-23 At&T Corp. Method of fabrication for electro-optical devices
US6075280A (en) * 1997-12-31 2000-06-13 Winbond Electronics Corporation Precision breaking of semiconductor wafer into chips by applying an etch process
JP2000025030A (ja) 1998-07-10 2000-01-25 Sumitomo Electric Ind Ltd セラミックス基板及びその製造方法
TW515781B (en) * 2001-07-27 2003-01-01 Hannstar Display Corp Method for dividing fragile material and laminated glass
JP2003209259A (ja) * 2002-01-17 2003-07-25 Fujitsu Ltd 半導体装置の製造方法及び半導体チップ
DE102004063180B4 (de) * 2004-12-29 2020-02-06 Robert Bosch Gmbh Verfahren zum Herstellen von Halbleiterchips aus einem Siliziumwafer und damit hergestellte Halbleiterbauelemente
CN102668042B (zh) * 2009-12-24 2015-06-24 株式会社村田制作所 电子元器件的制造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2046933A1 (fr) * 1969-06-20 1971-03-12 Siemens Ag
FR2062986A1 (fr) * 1969-09-24 1971-07-02 Omron Tateisi Electronics Co
EP0402230A1 (fr) * 1989-06-07 1990-12-12 Commissariat A L'energie Atomique Procédé et dispositif de marquage et de clivage de plaquettes de matériaux semiconducteurs monocristallins
FR2648274A1 (fr) * 1989-06-07 1990-12-14 Commissariat Energie Atomique Procede et dispositif de marquage et de clivage de plaquettes de materiaux semi-conducteurs monocristallins
US5174188A (en) * 1989-06-07 1992-12-29 Commissariat A L'energie Atomique Process and device for marking and cleaving plaquettes of monocrystalline semiconductor materials
WO1991008592A1 (fr) * 1989-11-21 1991-06-13 Eastman Kodak Company Separation amelioree des reseaux de diodes
WO1991008591A1 (fr) * 1989-11-21 1991-06-13 Eastman Kodak Company Separation des puces des reseaux de diodes au cours de leur fabrication
US5053836A (en) * 1989-11-21 1991-10-01 Eastman Kodak Company Cleaving of diode arrays with scribing channels
US5300806A (en) * 1989-11-21 1994-04-05 Eastman Kodak Company Separation of diode array chips during fabrication thereof

Also Published As

Publication number Publication date
NL6803086A (fr) 1968-12-02
DE1652512A1 (de) 1971-03-25
GB1170016A (en) 1969-11-12
DE1652512B2 (de) 1976-08-26
US3542266A (en) 1970-11-24

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Legal Events

Date Code Title Description
ST Notification of lapse