FR1551485A - - Google Patents

Info

Publication number
FR1551485A
FR1551485A FR1551485DA FR1551485A FR 1551485 A FR1551485 A FR 1551485A FR 1551485D A FR1551485D A FR 1551485DA FR 1551485 A FR1551485 A FR 1551485A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1551485A publication Critical patent/FR1551485A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1551485D 1967-01-25 1968-01-15 Expired FR1551485A (US06373033-20020416-M00071.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0107983 1967-01-25

Publications (1)

Publication Number Publication Date
FR1551485A true FR1551485A (US06373033-20020416-M00071.png) 1968-12-27

Family

ID=7528495

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1551485D Expired FR1551485A (US06373033-20020416-M00071.png) 1967-01-25 1968-01-15

Country Status (11)

Country Link
US (1) US3461359A (US06373033-20020416-M00071.png)
AT (1) AT273300B (US06373033-20020416-M00071.png)
BE (1) BE709801A (US06373033-20020416-M00071.png)
CH (1) CH495630A (US06373033-20020416-M00071.png)
DE (1) DE1614410B2 (US06373033-20020416-M00071.png)
DK (1) DK116887B (US06373033-20020416-M00071.png)
FR (1) FR1551485A (US06373033-20020416-M00071.png)
GB (1) GB1200975A (US06373033-20020416-M00071.png)
NL (1) NL6800940A (US06373033-20020416-M00071.png)
NO (1) NO120538B (US06373033-20020416-M00071.png)
SE (1) SE323750B (US06373033-20020416-M00071.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204895A1 (US06373033-20020416-M00071.png) * 1972-10-31 1974-05-24 Siemens Ag

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860947A (en) * 1970-03-19 1975-01-14 Hiroshi Gamo Thyristor with gold doping profile
US3668480A (en) * 1970-07-21 1972-06-06 Ibm Semiconductor device having many fold iv characteristics
US3874956A (en) * 1972-05-15 1975-04-01 Mitsubishi Electric Corp Method for making a semiconductor switching device
DE2310570C3 (de) * 1973-03-02 1980-08-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines überkopfzündfesten Thyristors
US3988762A (en) * 1974-05-28 1976-10-26 General Electric Company Minority carrier isolation barriers for semiconductor devices
US3988772A (en) * 1974-05-28 1976-10-26 General Electric Company Current isolation means for integrated power devices
US3988771A (en) * 1974-05-28 1976-10-26 General Electric Company Spatial control of lifetime in semiconductor device
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052447A (US06373033-20020416-M00071.png) * 1962-09-15
GB1060474A (en) * 1963-03-27 1967-03-01 Siemens Ag The production of monocrystalline semiconductor bodies of silicon or germanium
DE1439347A1 (de) * 1964-03-18 1968-11-07 Siemens Ag Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ
US3356543A (en) * 1964-12-07 1967-12-05 Rca Corp Method of decreasing the minority carrier lifetime by diffusion

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2204895A1 (US06373033-20020416-M00071.png) * 1972-10-31 1974-05-24 Siemens Ag

Also Published As

Publication number Publication date
DE1614410B2 (de) 1973-12-13
GB1200975A (en) 1970-08-05
DK116887B (da) 1970-02-23
CH495630A (de) 1970-08-31
US3461359A (en) 1969-08-12
BE709801A (US06373033-20020416-M00071.png) 1968-07-24
NO120538B (US06373033-20020416-M00071.png) 1970-11-02
NL6800940A (US06373033-20020416-M00071.png) 1968-07-26
AT273300B (de) 1969-08-11
DE1614410A1 (de) 1970-07-02
SE323750B (US06373033-20020416-M00071.png) 1970-05-11

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Legal Events

Date Code Title Description
ST Notification of lapse