FR1498862A - Méthode de décapage sélectif d'un matériau semi-conducteur - Google Patents

Méthode de décapage sélectif d'un matériau semi-conducteur

Info

Publication number
FR1498862A
FR1498862A FR06008111A FR06008111A FR1498862A FR 1498862 A FR1498862 A FR 1498862A FR 06008111 A FR06008111 A FR 06008111A FR 06008111 A FR06008111 A FR 06008111A FR 1498862 A FR1498862 A FR 1498862A
Authority
FR
France
Prior art keywords
semiconductor material
selective pickling
pickling
selective
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR06008111A
Other languages
English (en)
French (fr)
Inventor
Eginhart Biedermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1498862A publication Critical patent/FR1498862A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR06008111A 1965-11-15 1966-11-02 Méthode de décapage sélectif d'un matériau semi-conducteur Expired FR1498862A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1965J0029390 DE1287407B (de) 1965-11-15 1965-11-15 Verfahren zum selektiven AEtzen von Halbleitermaterial

Publications (1)

Publication Number Publication Date
FR1498862A true FR1498862A (fr) 1967-10-20

Family

ID=7203594

Family Applications (1)

Application Number Title Priority Date Filing Date
FR06008111A Expired FR1498862A (fr) 1965-11-15 1966-11-02 Méthode de décapage sélectif d'un matériau semi-conducteur

Country Status (3)

Country Link
DE (1) DE1287407B (un)
FR (1) FR1498862A (un)
GB (1) GB1141513A (un)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607448A (en) * 1968-10-21 1971-09-21 Hughes Aircraft Co Chemical milling of silicon carbide
EP0635881A2 (en) * 1993-07-12 1995-01-25 Motorola, Inc. A method of fabricating a silicon carbide locos vertical mosfet and device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2929589A1 (de) * 1979-07-04 1981-01-22 Bbc Brown Boveri & Cie Verfahren zur herstellung eines optisch transparenten und elektrisch leitfaehigen filmmusters
DE3069519D1 (en) * 1979-12-11 1984-11-29 Crosfield Electronics Ltd Correction of gravure printing members

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607448A (en) * 1968-10-21 1971-09-21 Hughes Aircraft Co Chemical milling of silicon carbide
EP0635881A2 (en) * 1993-07-12 1995-01-25 Motorola, Inc. A method of fabricating a silicon carbide locos vertical mosfet and device
EP0635881A3 (en) * 1993-07-12 1995-10-11 Motorola Inc Method of manufacturing a vertical LOCOS MOSFET in silicon carbide and device.

Also Published As

Publication number Publication date
DE1287407C2 (un) 1969-09-04
DE1287407B (de) 1969-01-16
GB1141513A (en) 1969-01-29

Similar Documents

Publication Publication Date Title
FR1363453A (fr) Matériau et procédé de soudage
GB1122489A (en) Method of diffusing material into a substrate
BE604422A (fr) Procédé de déposition d'un matériau semi-conducteur
FI52654C (fi) Menetelmä pääteosien valmistamiseksi vetoketjunauhaan.
FI45466C (fi) Menetelmä proteiiniaineen käsittelemiseksi sen tekemiseksi kutistumatt omaksi
CH416558A (de) Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial
FR1498862A (fr) Méthode de décapage sélectif d'un matériau semi-conducteur
FR1280376A (fr) Procédé de formation d'une jonction p-nu
FR1466167A (fr) Procédé d'isolement de l'acrylamide
BE603265A (fr) Procédé de formation de jonctions
FR1498843A (fr) Supraconducteur et procédé pour le former
FR1348330A (fr) Méthode de jonctions d'éléments thermoélectriques
AT266566B (de) Verfahren zum Gefrieren von Kartoffeln
SU475664A1 (ru) Способ получени контактного состава
BE582101A (fr) Procédé de fabrication d'une 2.6.dicétopipérazine.
SU472783A1 (ru) Способ изготовлени инструментов из сверхтвердых материалов на органической св зке
FR1499797A (fr) Méthode d'enduction
FR1370777A (fr) Procédé d'exploration géophysique
FR1445982A (fr) Procédé d'électro-précipitation et équipement électro-précipitateur
CH468240A (fr) Procédé de tournage d'une pièce
FR1478042A (fr) Procédé de fabrication d'un dispositif semi-conducteur
CH462160A (de) Verfahren zum Hydrolysieren von 17a,20;20,21-Bismethylendioxysteroiden der Pregnanreihe
CH420069A (de) Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial
CH407062A (de) Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial
FR1314888A (fr) Procédé d'exploration géophysique