FR1466103A - Method of manufacturing an epitaxial crystalline layer, in particular of a semiconductor substance - Google Patents

Method of manufacturing an epitaxial crystalline layer, in particular of a semiconductor substance

Info

Publication number
FR1466103A
FR1466103A FR47648A FR47648A FR1466103A FR 1466103 A FR1466103 A FR 1466103A FR 47648 A FR47648 A FR 47648A FR 47648 A FR47648 A FR 47648A FR 1466103 A FR1466103 A FR 1466103A
Authority
FR
France
Prior art keywords
manufacturing
crystalline layer
semiconductor substance
epitaxial crystalline
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR47648A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES95244A external-priority patent/DE1297086B/en
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Priority to FR47648A priority Critical patent/FR1466103A/en
Application granted granted Critical
Publication of FR1466103A publication Critical patent/FR1466103A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR47648A 1965-01-29 1966-01-28 Method of manufacturing an epitaxial crystalline layer, in particular of a semiconductor substance Expired FR1466103A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR47648A FR1466103A (en) 1965-01-29 1966-01-28 Method of manufacturing an epitaxial crystalline layer, in particular of a semiconductor substance

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES95244A DE1297086B (en) 1965-01-29 1965-01-29 Process for producing a layer of single crystal semiconductor material
FR47648A FR1466103A (en) 1965-01-29 1966-01-28 Method of manufacturing an epitaxial crystalline layer, in particular of a semiconductor substance

Publications (1)

Publication Number Publication Date
FR1466103A true FR1466103A (en) 1967-01-13

Family

ID=25997954

Family Applications (1)

Application Number Title Priority Date Filing Date
FR47648A Expired FR1466103A (en) 1965-01-29 1966-01-28 Method of manufacturing an epitaxial crystalline layer, in particular of a semiconductor substance

Country Status (1)

Country Link
FR (1) FR1466103A (en)

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