FR1429603A - Method of manufacturing an epitaxial layer of semiconductor substances - Google Patents

Method of manufacturing an epitaxial layer of semiconductor substances

Info

Publication number
FR1429603A
FR1429603A FR9663A FR9663A FR1429603A FR 1429603 A FR1429603 A FR 1429603A FR 9663 A FR9663 A FR 9663A FR 9663 A FR9663 A FR 9663A FR 1429603 A FR1429603 A FR 1429603A
Authority
FR
France
Prior art keywords
manufacturing
epitaxial layer
semiconductor substances
substances
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR9663A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to FR9663A priority Critical patent/FR1429603A/en
Application granted granted Critical
Publication of FR1429603A publication Critical patent/FR1429603A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR9663A 1965-03-18 1965-03-18 Method of manufacturing an epitaxial layer of semiconductor substances Expired FR1429603A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9663A FR1429603A (en) 1965-03-18 1965-03-18 Method of manufacturing an epitaxial layer of semiconductor substances

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9663A FR1429603A (en) 1965-03-18 1965-03-18 Method of manufacturing an epitaxial layer of semiconductor substances

Publications (1)

Publication Number Publication Date
FR1429603A true FR1429603A (en) 1966-02-25

Family

ID=8574239

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9663A Expired FR1429603A (en) 1965-03-18 1965-03-18 Method of manufacturing an epitaxial layer of semiconductor substances

Country Status (1)

Country Link
FR (1) FR1429603A (en)

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