FR1428581A - Condensateur incorporé dans un circuit monolithique et son procédé de fabrication - Google Patents
Condensateur incorporé dans un circuit monolithique et son procédé de fabricationInfo
- Publication number
- FR1428581A FR1428581A FR904A FR904A FR1428581A FR 1428581 A FR1428581 A FR 1428581A FR 904 A FR904 A FR 904A FR 904 A FR904 A FR 904A FR 1428581 A FR1428581 A FR 1428581A
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- monolithic circuit
- capacitor incorporated
- capacitor
- incorporated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/928—Active solid-state devices, e.g. transistors, solid-state diodes with shorted PN or schottky junction other than emitter junction
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR904A FR1428581A (fr) | 1965-01-05 | 1965-01-05 | Condensateur incorporé dans un circuit monolithique et son procédé de fabrication |
NL6600003A NL6600003A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1965-01-05 | 1966-01-01 | |
GB67/66A GB1129272A (en) | 1965-01-05 | 1966-01-03 | Improvements in and relating to metal-oxide-semiconductor capacitors |
DE19661564378 DE1564378A1 (de) | 1965-01-05 | 1966-01-04 | In eine integrierte Schaltungsanordnung aufgenommener Kondensator und Verfahren zu seiner Herstellung |
CH7266A CH444966A (de) | 1965-01-05 | 1966-01-04 | Kondensator mit Halbleiterelektrode und Verfahren zu seiner Herstellung |
US518928A US3402332A (en) | 1965-01-05 | 1966-01-05 | Metal-oxide-semiconductor capacitor using genetic semiconductor compound as dielectric |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR904A FR1428581A (fr) | 1965-01-05 | 1965-01-05 | Condensateur incorporé dans un circuit monolithique et son procédé de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1428581A true FR1428581A (fr) | 1966-02-18 |
Family
ID=8567339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR904A Expired FR1428581A (fr) | 1965-01-05 | 1965-01-05 | Condensateur incorporé dans un circuit monolithique et son procédé de fabrication |
Country Status (6)
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3506887A (en) * | 1966-02-23 | 1970-04-14 | Motorola Inc | Semiconductor device and method of making same |
US4001869A (en) * | 1975-06-09 | 1977-01-04 | Sprague Electric Company | Mos-capacitor for integrated circuits |
US4875083A (en) * | 1987-10-26 | 1989-10-17 | North Carolina State University | Metal-insulator-semiconductor capacitor formed on silicon carbide |
JP2654393B2 (ja) * | 1988-05-16 | 1997-09-17 | 株式会社日立製作所 | 半導体装置 |
US5801065A (en) * | 1994-02-03 | 1998-09-01 | Universal Semiconductor, Inc. | Structure and fabrication of semiconductor device having merged resistive/capacitive plate and/or surface layer that provides ESD protection |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3097308A (en) * | 1959-03-09 | 1963-07-09 | Rca Corp | Semiconductor device with surface electrode producing electrostatic field and circuits therefor |
US3202891A (en) * | 1960-11-30 | 1965-08-24 | Gen Telephone & Elect | Voltage variable capacitor with strontium titanate dielectric |
US3274025A (en) * | 1963-12-13 | 1966-09-20 | Corning Glass Works | Method of forming an electrical capacitor |
-
1965
- 1965-01-05 FR FR904A patent/FR1428581A/fr not_active Expired
-
1966
- 1966-01-01 NL NL6600003A patent/NL6600003A/xx unknown
- 1966-01-03 GB GB67/66A patent/GB1129272A/en not_active Expired
- 1966-01-04 CH CH7266A patent/CH444966A/de unknown
- 1966-01-04 DE DE19661564378 patent/DE1564378A1/de active Pending
- 1966-01-05 US US518928A patent/US3402332A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3402332A (en) | 1968-09-17 |
DE1564378A1 (de) | 1970-01-08 |
CH444966A (de) | 1967-10-15 |
NL6600003A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1966-07-06 |
GB1129272A (en) | 1968-10-02 |
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