FR1343659A - Dispositif traducteur de signaux à l'état solide et son procédé de fabrication - Google Patents
Dispositif traducteur de signaux à l'état solide et son procédé de fabricationInfo
- Publication number
- FR1343659A FR1343659A FR911603A FR911603A FR1343659A FR 1343659 A FR1343659 A FR 1343659A FR 911603 A FR911603 A FR 911603A FR 911603 A FR911603 A FR 911603A FR 1343659 A FR1343659 A FR 1343659A
- Authority
- FR
- France
- Prior art keywords
- solid state
- state signal
- manufacturing same
- translator device
- signal translator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B18/00—Shaping glass in contact with the surface of a liquid
- C03B18/02—Forming sheets
- C03B18/04—Changing or regulating the dimensions of the molten glass ribbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/957—Making metal-insulator-metal device
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Control Of Charge By Means Of Generators (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US155726A US3254276A (en) | 1961-11-29 | 1961-11-29 | Solid-state translating device with barrier-layers formed by thin metal and semiconductor material |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1343659A true FR1343659A (fr) | 1963-11-22 |
Family
ID=47045249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR911603A Expired FR1343659A (fr) | 1961-11-29 | 1962-10-08 | Dispositif traducteur de signaux à l'état solide et son procédé de fabrication |
Country Status (6)
Country | Link |
---|---|
US (1) | US3254276A (fr) |
BE (1) | BE625476A (fr) |
ES (1) | ES281118A1 (fr) |
FR (1) | FR1343659A (fr) |
GB (1) | GB1002267A (fr) |
NL (1) | NL286122A (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1273698B (de) * | 1964-01-08 | 1968-07-25 | Telefunken Patent | Halbleiteranordnung |
US3304469A (en) * | 1964-03-03 | 1967-02-14 | Rca Corp | Field effect solid state device having a partially insulated electrode |
DE1464880B2 (de) * | 1964-05-05 | 1970-11-12 | Danfoss A/S, Nordborg (Dänemark) | Elektronische Schaltanordnung unter Verwendung von sperrschichtfreien Halbleiter-Schaltelementen |
US3368919A (en) * | 1964-07-29 | 1968-02-13 | Sylvania Electric Prod | Composite protective coat for thin film devices |
DE1289188B (de) * | 1964-12-15 | 1969-02-13 | Telefunken Patent | Metallbasistransistor |
US3569801A (en) * | 1969-06-02 | 1971-03-09 | Gen Electric | Thin film triodes and method of forming |
US4818565A (en) * | 1987-10-30 | 1989-04-04 | Regents Of The University Of Minnesota | Method to stabilize metal contacts on mercury-cadmium-telluride alloys |
FR2754386B1 (fr) * | 1996-10-03 | 1998-10-30 | Commissariat Energie Atomique | Structure comprenant une partie isolee dans un substrat massif et procede de realisation d'une telle structure |
US20050072461A1 (en) * | 2003-05-27 | 2005-04-07 | Frank Kuchinski | Pinhole porosity free insulating films on flexible metallic substrates for thin film applications |
US8586480B1 (en) * | 2012-07-31 | 2013-11-19 | Ixys Corporation | Power MOSFET having selectively silvered pads for clip and bond wire attach |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1900018A (en) * | 1928-03-28 | 1933-03-07 | Lilienfeld Julius Edgar | Device for controlling electric current |
US2849342A (en) * | 1953-03-17 | 1958-08-26 | Rca Corp | Semiconductor devices and method of making them |
US2861017A (en) * | 1953-09-30 | 1958-11-18 | Honeywell Regulator Co | Method of preparing semi-conductor devices |
US2778980A (en) * | 1954-08-30 | 1957-01-22 | Gen Electric | High power junction semiconductor device |
US2842668A (en) * | 1955-05-25 | 1958-07-08 | Ibm | High frequency transistor oscillator |
NL209275A (fr) * | 1955-09-02 | |||
US2953693A (en) * | 1957-02-27 | 1960-09-20 | Westinghouse Electric Corp | Semiconductor diode |
NL233303A (fr) * | 1957-11-30 | |||
US3098160A (en) * | 1958-02-24 | 1963-07-16 | Clevite Corp | Field controlled avalanche semiconductive device |
US3040266A (en) * | 1958-06-16 | 1962-06-19 | Union Carbide Corp | Surface field effect transistor amplifier |
US3024140A (en) * | 1960-07-05 | 1962-03-06 | Space Technology Lab Inc | Nonlinear electrical arrangement |
US3135926A (en) * | 1960-09-19 | 1964-06-02 | Gen Motors Corp | Composite field effect transistor |
-
1961
- 1961-11-29 US US155726A patent/US3254276A/en not_active Expired - Lifetime
-
1962
- 1962-09-27 ES ES281118A patent/ES281118A1/es not_active Expired
- 1962-10-08 FR FR911603A patent/FR1343659A/fr not_active Expired
- 1962-11-29 GB GB45140/62A patent/GB1002267A/en not_active Expired
- 1962-11-29 BE BE625476D patent/BE625476A/fr unknown
- 1962-11-29 NL NL286122D patent/NL286122A/nl unknown
Also Published As
Publication number | Publication date |
---|---|
GB1002267A (en) | 1965-08-25 |
US3254276A (en) | 1966-05-31 |
BE625476A (fr) | 1963-03-15 |
NL286122A (fr) | 1965-02-10 |
ES281118A1 (es) | 1963-03-01 |
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