FR1355897A - Dispositif électronique à l'état solide, procédé de fabrication et appareil utilisant ce dispositif - Google Patents

Dispositif électronique à l'état solide, procédé de fabrication et appareil utilisant ce dispositif

Info

Publication number
FR1355897A
FR1355897A FR928922A FR928922A FR1355897A FR 1355897 A FR1355897 A FR 1355897A FR 928922 A FR928922 A FR 928922A FR 928922 A FR928922 A FR 928922A FR 1355897 A FR1355897 A FR 1355897A
Authority
FR
France
Prior art keywords
manufacturing
solid state
state electronic
electronic device
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR928922A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of FR1355897A publication Critical patent/FR1355897A/fr
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of Metal-Insulator-Metal [MIM] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
FR928922A 1962-03-22 1963-03-22 Dispositif électronique à l'état solide, procédé de fabrication et appareil utilisant ce dispositif Expired FR1355897A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18167762A 1962-03-22 1962-03-22
US67087967A 1967-09-27 1967-09-27

Publications (1)

Publication Number Publication Date
FR1355897A true FR1355897A (fr) 1964-03-20

Family

ID=26877415

Family Applications (1)

Application Number Title Priority Date Filing Date
FR928922A Expired FR1355897A (fr) 1962-03-22 1963-03-22 Dispositif électronique à l'état solide, procédé de fabrication et appareil utilisant ce dispositif

Country Status (4)

Country Link
US (1) US3447045A (fr)
DE (1) DE1252818B (fr)
FR (1) FR1355897A (fr)
GB (1) GB1044362A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3336514A (en) * 1965-03-29 1967-08-15 Gen Electric Bistable metal-niobium oxide-bismuth thin film devices

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3688160A (en) * 1971-03-25 1972-08-29 Matsushita Electric Ind Co Ltd Thin film non-rectifying negative resistance device
US4286275A (en) * 1980-02-04 1981-08-25 International Business Machines Corporation Semiconductor device
FR2634060B1 (fr) * 1988-07-05 1996-02-09 Thomson Csf Structure de source d'electrons et application aux tubes d'emission d'ondes electromagnetiques
EP0367195A3 (fr) * 1988-10-31 1991-10-02 Matsushita Electric Industrial Co., Ltd. Eléments émetteurs d'électrons à cathode froide MIM et leurs procédés de fabrication
DE3929847A1 (de) * 1989-09-08 1991-05-08 Ernst Prof Dr Ing Lueder Verfahren zur herstellung eines elektronischen schaltelementes
US5281897A (en) * 1990-10-30 1994-01-25 Hans Fimml Method for operation of a cathode using the tunnelling effect and a cathode configuration for execution of the method
JPH10308165A (ja) * 1997-03-04 1998-11-17 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
JP3724915B2 (ja) * 1997-05-15 2005-12-07 パイオニア株式会社 電子放出素子及びこれを用いた表示装置
JPH10321123A (ja) * 1997-05-15 1998-12-04 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
JPH1167063A (ja) * 1997-08-08 1999-03-09 Pioneer Electron Corp 電子放出素子及びこれを用いた表示装置
JP2000323016A (ja) * 1999-05-17 2000-11-24 Hitachi Ltd 表示装置
US20040166600A1 (en) * 1999-05-17 2004-08-26 Hitachi, Ltd. Display
JP4150013B2 (ja) * 2005-03-31 2008-09-17 Ｔｄｋ株式会社 トンネル効果素子
US20090303643A1 (en) * 2008-06-10 2009-12-10 Yen-Wei Hsu Surge protect circuit
DE102010043277A1 (de) * 2010-11-03 2012-05-03 Robert Bosch Gmbh Mikroelektromechanischer Sensor zur Messung einer Kraft sowie entsprechendes Verfahren

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3056073A (en) * 1960-02-15 1962-09-25 California Inst Res Found Solid-state electron devices
US3259759A (en) * 1960-07-05 1966-07-05 Gen Electric Laminated electronic devices in which a tunneling electron-permeable film separates opposed electrodes
US3121177A (en) * 1962-01-23 1964-02-11 Robert H Davis Active thin-film devices controlling current by modulation of a quantum mechanical potential barrier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3336514A (en) * 1965-03-29 1967-08-15 Gen Electric Bistable metal-niobium oxide-bismuth thin film devices

Also Published As

Publication number Publication date
US3447045A (en) 1969-05-27
DE1252818B (fr) 1900-01-01
GB1044362A (en) 1966-09-28

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