NL233303A - - Google Patents

Info

Publication number
NL233303A
NL233303A NL233303DA NL233303A NL 233303 A NL233303 A NL 233303A NL 233303D A NL233303D A NL 233303DA NL 233303 A NL233303 A NL 233303A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL233303A publication Critical patent/NL233303A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
NL233303D 1957-11-30 NL233303A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2924760X 1957-11-30

Publications (1)

Publication Number Publication Date
NL233303A true NL233303A (fr)

Family

ID=8001430

Family Applications (1)

Application Number Title Priority Date Filing Date
NL233303D NL233303A (fr) 1957-11-30

Country Status (3)

Country Link
US (1) US2924760A (fr)
FR (1) FR1220840A (fr)
NL (1) NL233303A (fr)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3018539A (en) * 1956-11-06 1962-01-30 Motorola Inc Diffused base transistor and method of making same
DE1130523B (de) * 1958-01-22 1962-05-30 Siemens Ag Anordnung mit mindestens drei pnp-bzw. npn-Flaechentransistoren
US3063879A (en) * 1959-02-26 1962-11-13 Westinghouse Electric Corp Configuration for semiconductor devices
US3109758A (en) * 1959-10-26 1963-11-05 Bell Telephone Labor Inc Improved tunnel diode
FR1281944A (fr) * 1959-11-10 1962-01-19 Westinghouse Electric Corp Dispositif à semi-conducteur à plusieurs bornes
US3124640A (en) * 1960-01-20 1964-03-10 Figure
US3263138A (en) * 1960-02-29 1966-07-26 Westinghouse Electric Corp Multifunctional semiconductor devices
NL262767A (fr) * 1960-04-01
NL254591A (fr) * 1960-08-12
NL269092A (fr) * 1960-09-09 1900-01-01
US3171068A (en) * 1960-10-19 1965-02-23 Merck & Co Inc Semiconductor diodes
US3210617A (en) * 1961-01-11 1965-10-05 Westinghouse Electric Corp High gain transistor comprising direct connection between base and emitter electrodes
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
US3254276A (en) * 1961-11-29 1966-05-31 Philco Corp Solid-state translating device with barrier-layers formed by thin metal and semiconductor material
US3214652A (en) * 1962-03-19 1965-10-26 Motorola Inc Transistor comprising prong-shaped emitter electrode
DE1209211B (de) * 1962-03-27 1966-01-20 Siemens Ag Steuerbares Halbleiterbauelement mit mindestens drei pn-UEbergaengen und mit einer Steuerelektrode
DE1202906B (de) * 1962-05-10 1965-10-14 Licentia Gmbh Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen
US3293513A (en) * 1962-08-08 1966-12-20 Texas Instruments Inc Semiconductor radiant diode
US3241013A (en) * 1962-10-25 1966-03-15 Texas Instruments Inc Integral transistor pair for use as chopper
US3191070A (en) * 1963-01-21 1965-06-22 Fairchild Camera Instr Co Transistor agg device
GB1054514A (fr) * 1963-04-05 1900-01-01
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
NL136562C (fr) * 1963-10-24
DE1439478A1 (de) * 1964-12-01 1968-10-31 Siemens Ag Flaechentransistor zum Betrieb in Regelschaltungen
US3287610A (en) * 1965-03-30 1966-11-22 Bendix Corp Compatible package and transistor for high frequency operation "compact"
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
US3922706A (en) * 1965-07-31 1975-11-25 Telefunken Patent Transistor having emitter with high circumference-surface area ratio
US3584268A (en) * 1967-03-03 1971-06-08 Xerox Corp Inverted space charge limited triode
US3465214A (en) * 1967-03-23 1969-09-02 Mallory & Co Inc P R High-current integrated-circuit power transistor
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
BE758009A (fr) * 1969-10-27 1971-04-26 Western Electric Co Dispositif a impedance reglable pour circuit integre
US3935587A (en) * 1974-08-14 1976-01-27 Westinghouse Electric Corporation High power, high frequency bipolar transistor with alloyed gold electrodes
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2771382A (en) * 1951-12-12 1956-11-20 Bell Telephone Labor Inc Method of fabricating semiconductors for signal translating devices
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices

Also Published As

Publication number Publication date
US2924760A (en) 1960-02-09
FR1220840A (fr) 1960-05-27

Similar Documents

Publication Publication Date Title
BE569151A (fr)
BE572876A (fr)
BE564628A (fr)
BE572531A (fr)
BE572807A (fr)
BE564556A (fr)
BE572846A (fr)
BE567245A (fr)
BE572146A (fr)
BE571527A (fr)
BE564288A (fr)
BE564176A (fr)
BE563926A (fr)
BE563859A (fr)
BE563467A (fr)
BE571259A (fr)
BE561550A (fr)
BE561509A (fr)
BE559761A (fr)
BE572949A (fr)
BE564816A (fr)
BE571223A (fr)
BE564823A (fr)
BE565615A (fr)
BE565931A (fr)