NL233303A - - Google Patents
Info
- Publication number
- NL233303A NL233303A NL233303DA NL233303A NL 233303 A NL233303 A NL 233303A NL 233303D A NL233303D A NL 233303DA NL 233303 A NL233303 A NL 233303A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2924760X | 1957-11-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL233303A true NL233303A (fr) |
Family
ID=8001430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL233303D NL233303A (fr) | 1957-11-30 |
Country Status (3)
Country | Link |
---|---|
US (1) | US2924760A (fr) |
FR (1) | FR1220840A (fr) |
NL (1) | NL233303A (fr) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3018539A (en) * | 1956-11-06 | 1962-01-30 | Motorola Inc | Diffused base transistor and method of making same |
DE1130523B (de) * | 1958-01-22 | 1962-05-30 | Siemens Ag | Anordnung mit mindestens drei pnp-bzw. npn-Flaechentransistoren |
US3063879A (en) * | 1959-02-26 | 1962-11-13 | Westinghouse Electric Corp | Configuration for semiconductor devices |
US3109758A (en) * | 1959-10-26 | 1963-11-05 | Bell Telephone Labor Inc | Improved tunnel diode |
FR1281944A (fr) * | 1959-11-10 | 1962-01-19 | Westinghouse Electric Corp | Dispositif à semi-conducteur à plusieurs bornes |
US3124640A (en) * | 1960-01-20 | 1964-03-10 | Figure | |
US3263138A (en) * | 1960-02-29 | 1966-07-26 | Westinghouse Electric Corp | Multifunctional semiconductor devices |
NL123575C (fr) * | 1960-04-01 | |||
NL254591A (fr) * | 1960-08-12 | |||
NL269092A (fr) * | 1960-09-09 | 1900-01-01 | ||
US3171068A (en) * | 1960-10-19 | 1965-02-23 | Merck & Co Inc | Semiconductor diodes |
US3210617A (en) * | 1961-01-11 | 1965-10-05 | Westinghouse Electric Corp | High gain transistor comprising direct connection between base and emitter electrodes |
US3197681A (en) * | 1961-09-29 | 1965-07-27 | Texas Instruments Inc | Semiconductor devices with heavily doped region to prevent surface inversion |
US3254276A (en) * | 1961-11-29 | 1966-05-31 | Philco Corp | Solid-state translating device with barrier-layers formed by thin metal and semiconductor material |
US3214652A (en) * | 1962-03-19 | 1965-10-26 | Motorola Inc | Transistor comprising prong-shaped emitter electrode |
DE1209211B (de) * | 1962-03-27 | 1966-01-20 | Siemens Ag | Steuerbares Halbleiterbauelement mit mindestens drei pn-UEbergaengen und mit einer Steuerelektrode |
DE1202906B (de) * | 1962-05-10 | 1965-10-14 | Licentia Gmbh | Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen |
US3293513A (en) * | 1962-08-08 | 1966-12-20 | Texas Instruments Inc | Semiconductor radiant diode |
US3241013A (en) * | 1962-10-25 | 1966-03-15 | Texas Instruments Inc | Integral transistor pair for use as chopper |
US3191070A (en) * | 1963-01-21 | 1965-06-22 | Fairchild Camera Instr Co | Transistor agg device |
GB1054514A (fr) * | 1963-04-05 | 1900-01-01 | ||
US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
NL136562C (fr) * | 1963-10-24 | |||
DE1439478A1 (de) * | 1964-12-01 | 1968-10-31 | Siemens Ag | Flaechentransistor zum Betrieb in Regelschaltungen |
US3287610A (en) * | 1965-03-30 | 1966-11-22 | Bendix Corp | Compatible package and transistor for high frequency operation "compact" |
US3381183A (en) * | 1965-06-21 | 1968-04-30 | Rca Corp | High power multi-emitter transistor |
US3922706A (en) * | 1965-07-31 | 1975-11-25 | Telefunken Patent | Transistor having emitter with high circumference-surface area ratio |
US3584268A (en) * | 1967-03-03 | 1971-06-08 | Xerox Corp | Inverted space charge limited triode |
US3465214A (en) * | 1967-03-23 | 1969-09-02 | Mallory & Co Inc P R | High-current integrated-circuit power transistor |
US3577042A (en) * | 1967-06-19 | 1971-05-04 | Int Rectifier Corp | Gate connection for controlled rectifiers |
BE758009A (fr) * | 1969-10-27 | 1971-04-26 | Western Electric Co | Dispositif a impedance reglable pour circuit integre |
US3935587A (en) * | 1974-08-14 | 1976-01-27 | Westinghouse Electric Corporation | High power, high frequency bipolar transistor with alloyed gold electrodes |
JPS5778173A (en) * | 1980-11-04 | 1982-05-15 | Hitachi Ltd | Semiconductor device and manufacture thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2771382A (en) * | 1951-12-12 | 1956-11-20 | Bell Telephone Labor Inc | Method of fabricating semiconductors for signal translating devices |
US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
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0
- NL NL233303D patent/NL233303A/xx unknown
-
1958
- 1958-11-25 US US776323A patent/US2924760A/en not_active Expired - Lifetime
- 1958-11-25 FR FR780056A patent/FR1220840A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US2924760A (en) | 1960-02-09 |
FR1220840A (fr) | 1960-05-27 |