FR1331912A - Procédé de fabrication d'un dispositif semi-conducteur en silicium - Google Patents

Procédé de fabrication d'un dispositif semi-conducteur en silicium

Info

Publication number
FR1331912A
FR1331912A FR853694A FR853694A FR1331912A FR 1331912 A FR1331912 A FR 1331912A FR 853694 A FR853694 A FR 853694A FR 853694 A FR853694 A FR 853694A FR 1331912 A FR1331912 A FR 1331912A
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
silicon semiconductor
silicon
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR853694A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES67522A external-priority patent/DE1116827B/de
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to FR853694A priority Critical patent/FR1331912A/fr
Application granted granted Critical
Publication of FR1331912A publication Critical patent/FR1331912A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L2924/01075—Rhenium [Re]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
FR853694A 1960-03-11 1961-02-23 Procédé de fabrication d'un dispositif semi-conducteur en silicium Expired FR1331912A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR853694A FR1331912A (fr) 1960-03-11 1961-02-23 Procédé de fabrication d'un dispositif semi-conducteur en silicium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES67522A DE1116827B (de) 1960-03-11 1960-03-11 Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einer Legierungselektrode
FR853694A FR1331912A (fr) 1960-03-11 1961-02-23 Procédé de fabrication d'un dispositif semi-conducteur en silicium

Publications (1)

Publication Number Publication Date
FR1331912A true FR1331912A (fr) 1963-07-12

Family

ID=25996010

Family Applications (1)

Application Number Title Priority Date Filing Date
FR853694A Expired FR1331912A (fr) 1960-03-11 1961-02-23 Procédé de fabrication d'un dispositif semi-conducteur en silicium

Country Status (1)

Country Link
FR (1) FR1331912A (fr)

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