FR1311415A - élément de circuit électronique - Google Patents

élément de circuit électronique

Info

Publication number
FR1311415A
FR1311415A FR877747A FR877747A FR1311415A FR 1311415 A FR1311415 A FR 1311415A FR 877747 A FR877747 A FR 877747A FR 877747 A FR877747 A FR 877747A FR 1311415 A FR1311415 A FR 1311415A
Authority
FR
France
Prior art keywords
electronic circuit
circuit element
electronic
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR877747A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1311415A publication Critical patent/FR1311415A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/92—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of superconductive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D1/00—Demodulation of amplitude-modulated oscillations
    • H03D1/08—Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/02—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/11—Single-electron tunnelling devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Soft Magnetic Materials (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)
  • Hall/Mr Elements (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
FR877747A 1960-11-14 1961-11-02 élément de circuit électronique Expired FR1311415A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6907360A 1960-11-14 1960-11-14

Publications (1)

Publication Number Publication Date
FR1311415A true FR1311415A (fr) 1962-12-07

Family

ID=22086562

Family Applications (1)

Application Number Title Priority Date Filing Date
FR877747A Expired FR1311415A (fr) 1960-11-14 1961-11-02 élément de circuit électronique

Country Status (6)

Country Link
JP (1) JPS3916032B1 (OSRAM)
CH (1) CH424939A (OSRAM)
DE (1) DE1414863A1 (OSRAM)
FR (1) FR1311415A (OSRAM)
GB (1) GB1008422A (OSRAM)
NL (1) NL271183A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840865A (en) * 1972-06-23 1974-10-08 Ibm Detection of magnetic domains by tunnel junctions
KR102706220B1 (ko) * 2020-01-17 2024-09-13 양쯔 메모리 테크놀로지스 씨오., 엘티디. 어드밴스드 메모리 구조 및 디바이스
CN113838964B (zh) * 2021-09-15 2023-11-24 北京量子信息科学研究院 超导-半导体纳米线异质结及其制备方法和包含其的器件

Also Published As

Publication number Publication date
GB1008422A (en) 1965-10-27
DE1414863A1 (de) 1968-10-03
JPS3916032B1 (OSRAM) 1964-08-07
CH424939A (fr) 1966-11-30
NL271183A (OSRAM)

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