GB1008422A - Circuit element - Google Patents
Circuit elementInfo
- Publication number
- GB1008422A GB1008422A GB33335/61D GB3333561D GB1008422A GB 1008422 A GB1008422 A GB 1008422A GB 33335/61 D GB33335/61 D GB 33335/61D GB 3333561 D GB3333561 D GB 3333561D GB 1008422 A GB1008422 A GB 1008422A
- Authority
- GB
- United Kingdom
- Prior art keywords
- super
- conductor
- bodies
- semi
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 3
- 230000005855 radiation Effects 0.000 abstract 3
- 239000002887 superconductor Substances 0.000 abstract 3
- 229910052738 indium Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052718 tin Inorganic materials 0.000 abstract 2
- 229910016317 BiTe Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910019021 Mg 2 Sn Inorganic materials 0.000 abstract 1
- 229910002665 PbTe Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 abstract 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 abstract 1
- 229940112669 cuprous oxide Drugs 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229910003465 moissanite Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/92—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of superconductive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D1/00—Demodulation of amplitude-modulated oscillations
- H03D1/08—Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/02—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/11—Single-electron tunnelling devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Water Treatment By Electricity Or Magnetism (AREA)
- Hall/Mr Elements (AREA)
- Soft Magnetic Materials (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
1,008,422. Semi-conductor and super-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 26, 1961 [Nov. 14, 1960], No. 38335/61. Heading H1K. A negative resistance circuit arrangement comprises a device having two bodies of different energy gaps separated by a dielectric layer thin enough to allow tunnelling at least one of the bodies being a super-conductor or semi-conductor which is subjected to the influence of temperature near 0 absolute, or magnetic field or radiation to vary the width of its energy gap. Fig. 1 shows an element consisting of bodies 11 and 13 of super-conducting or semi-conducting material having different energy gaps and separated by an insulating layer 12, which is thin enough to permit tunnelling. The bodies may consist of a wire or 0À001 mm. film of super-conducting materials such as Al, Pb, Sn, Ta, Nb or In, or of semi-conducting materials such as Ge, BiTe, PbTe, SiC, GaAs, Mg 2 Sn, InSb, Cs 3 Sb, CdS, SnO doped if desired with As, Sn, P or In. The insulating layer may consist of a layer 10-20 thick of aluminium oxide, silicon monoxide or cuprous oxide. Fig. 4 shows the voltage current characteristic of the element which is symmetrical about the origin and has negative resistance portions. The nature of the characteristic may be controlled by varying the temperature or strength of an applied magnetic field to modify the transition temperature and energy gap of the super-conducting materials or by applying radiation to modify the semi-conductor material. Fig. 9 shows apparatus for this purpose in which an element 32 such as shown in Fig. 1 is suspended in liquid helium 22 in a Dewar flask. Coil 38 provides a controllable magnetic field around element 32, the temperature of which may be modified by heater 36. Lamp 40 provides a means of subjecting element 32 to further control by submitting it to radiation. Control may also be effected by passing current through one of the bodies or by introducing an additional member into the element to provide means for providing a variable magnetic field. The element may be mounted in a waveguide or cavity of super-conductor material. One body may be associated with two insulating layers, each bearing another body, so providing two elements. Simple oscillator, amplifier and bi-stable circuits are described.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6907360A | 1960-11-14 | 1960-11-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1008422A true GB1008422A (en) | 1965-10-27 |
Family
ID=22086562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB33335/61D Expired GB1008422A (en) | 1960-11-14 | 1961-10-26 | Circuit element |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS3916032B1 (en) |
| CH (1) | CH424939A (en) |
| DE (1) | DE1414863A1 (en) |
| FR (1) | FR1311415A (en) |
| GB (1) | GB1008422A (en) |
| NL (1) | NL271183A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2189746A1 (en) * | 1972-06-23 | 1974-01-25 | Ibm | |
| CN111344790A (en) * | 2020-01-17 | 2020-06-26 | 长江存储科技有限责任公司 | Advanced memory structure and apparatus |
| CN113838964A (en) * | 2021-09-15 | 2021-12-24 | 北京量子信息科学研究院 | Superconducting-semiconductor nanowire heterojunction, method of manufacturing the same, and device comprising the same |
-
0
- NL NL271183D patent/NL271183A/xx unknown
-
1961
- 1961-10-26 GB GB33335/61D patent/GB1008422A/en not_active Expired
- 1961-11-02 FR FR877747A patent/FR1311415A/en not_active Expired
- 1961-11-08 DE DE19611414863 patent/DE1414863A1/en active Pending
- 1961-11-08 CH CH1293761A patent/CH424939A/en unknown
- 1961-11-09 JP JP4008361A patent/JPS3916032B1/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2189746A1 (en) * | 1972-06-23 | 1974-01-25 | Ibm | |
| CN111344790A (en) * | 2020-01-17 | 2020-06-26 | 长江存储科技有限责任公司 | Advanced memory structure and apparatus |
| CN111344790B (en) * | 2020-01-17 | 2021-01-29 | 长江存储科技有限责任公司 | Advanced memory structure and apparatus |
| US11462264B2 (en) | 2020-01-17 | 2022-10-04 | Yangtze Memory Technologies Co., Ltd. | Advanced memory structure and device |
| CN113838964A (en) * | 2021-09-15 | 2021-12-24 | 北京量子信息科学研究院 | Superconducting-semiconductor nanowire heterojunction, method of manufacturing the same, and device comprising the same |
| CN113838964B (en) * | 2021-09-15 | 2023-11-24 | 北京量子信息科学研究院 | Superconducting-semiconductor nanowire heterojunction, preparation method thereof and device comprising superconducting-semiconductor nanowire heterojunction |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS3916032B1 (en) | 1964-08-07 |
| CH424939A (en) | 1966-11-30 |
| DE1414863A1 (en) | 1968-10-03 |
| FR1311415A (en) | 1962-12-07 |
| NL271183A (en) |
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