FR1311415A - electronic circuit element - Google Patents

electronic circuit element

Info

Publication number
FR1311415A
FR1311415A FR877747A FR877747A FR1311415A FR 1311415 A FR1311415 A FR 1311415A FR 877747 A FR877747 A FR 877747A FR 877747 A FR877747 A FR 877747A FR 1311415 A FR1311415 A FR 1311415A
Authority
FR
France
Prior art keywords
electronic circuit
circuit element
electronic
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR877747A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1311415A publication Critical patent/FR1311415A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/92—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of superconductive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D1/00—Demodulation of amplitude-modulated oscillations
    • H03D1/08—Demodulation of amplitude-modulated oscillations by means of non-linear two-pole elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/02—Transference of modulation from one carrier to another, e.g. frequency-changing by means of diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/11—Single-electron tunnelling devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Soft Magnetic Materials (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
FR877747A 1960-11-14 1961-11-02 electronic circuit element Expired FR1311415A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6907360A 1960-11-14 1960-11-14

Publications (1)

Publication Number Publication Date
FR1311415A true FR1311415A (en) 1962-12-07

Family

ID=22086562

Family Applications (1)

Application Number Title Priority Date Filing Date
FR877747A Expired FR1311415A (en) 1960-11-14 1961-11-02 electronic circuit element

Country Status (6)

Country Link
JP (1) JPS3916032B1 (en)
CH (1) CH424939A (en)
DE (1) DE1414863A1 (en)
FR (1) FR1311415A (en)
GB (1) GB1008422A (en)
NL (1) NL271183A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3840865A (en) * 1972-06-23 1974-10-08 Ibm Detection of magnetic domains by tunnel junctions
JP7412449B2 (en) 2020-01-17 2024-01-12 長江存儲科技有限責任公司 Advanced memory structures and devices
CN113838964B (en) * 2021-09-15 2023-11-24 北京量子信息科学研究院 Superconducting-semiconductor nanowire heterojunction, preparation method thereof and device comprising superconducting-semiconductor nanowire heterojunction

Also Published As

Publication number Publication date
NL271183A (en)
CH424939A (en) 1966-11-30
GB1008422A (en) 1965-10-27
JPS3916032B1 (en) 1964-08-07
DE1414863A1 (en) 1968-10-03

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