FR1289687A - Matière semi-conductrice et son procédé de fabrication - Google Patents
Matière semi-conductrice et son procédé de fabricationInfo
- Publication number
- FR1289687A FR1289687A FR857391A FR857391A FR1289687A FR 1289687 A FR1289687 A FR 1289687A FR 857391 A FR857391 A FR 857391A FR 857391 A FR857391 A FR 857391A FR 1289687 A FR1289687 A FR 1289687A
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- semiconductor material
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR857391A FR1289687A (fr) | 1960-03-31 | 1961-03-30 | Matière semi-conductrice et son procédé de fabrication |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1905460A | 1960-03-31 | 1960-03-31 | |
US5357560A | 1960-08-24 | 1960-08-24 | |
FR857391A FR1289687A (fr) | 1960-03-31 | 1961-03-30 | Matière semi-conductrice et son procédé de fabrication |
US365925A US3226269A (en) | 1960-03-31 | 1964-05-12 | Monocrystalline elongate polyhedral semiconductor material |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1289687A true FR1289687A (fr) | 1962-04-06 |
Family
ID=27445291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR857391A Expired FR1289687A (fr) | 1960-03-31 | 1961-03-30 | Matière semi-conductrice et son procédé de fabrication |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1289687A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1211723B (de) * | 1962-11-27 | 1966-03-03 | Siemens Ag | Verfahren zur Herstellung von Halbleiterbauelementen |
DE1229648B (de) * | 1961-06-27 | 1966-12-01 | Siemens Ag | Als Halbleiter-Festkoerperschaltkreis ausgebildete integrierte Graetz-Gleichrichteranordnung |
-
1961
- 1961-03-30 FR FR857391A patent/FR1289687A/fr not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1229648B (de) * | 1961-06-27 | 1966-12-01 | Siemens Ag | Als Halbleiter-Festkoerperschaltkreis ausgebildete integrierte Graetz-Gleichrichteranordnung |
DE1211723B (de) * | 1962-11-27 | 1966-03-03 | Siemens Ag | Verfahren zur Herstellung von Halbleiterbauelementen |
DE1211723C2 (de) * | 1962-11-27 | 1966-09-08 | Siemens Ag | Verfahren zur Herstellung von Halbleiterbauelementen |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BE609586A (fr) | Matière semi-conductrice, et son procédé de fabrication | |
FR1278336A (fr) | Chausson et son procédé de fabrication | |
CH392701A (fr) | Diode à semi-conducteur et son procédé de fabrication | |
BE610917A (fr) | Procédé de fabrication de matière semi-conductrice | |
FR1303419A (fr) | Catalyseur perfectionné et son procédé de fabrication | |
BE596277A (fr) | Matière réfractaire extra-alumineuse et son procédé de fabrication | |
FR1303277A (fr) | Matériau magnétique et son procédé de fabrication | |
FR1289687A (fr) | Matière semi-conductrice et son procédé de fabrication | |
BE573518A (fr) | Matière de rembourrage et son procédé de fabrication. | |
FR1322501A (fr) | Transducteur et son procédé de fabrication | |
FR1308788A (fr) | Matière semi-conductrice et son procédé de fabrication | |
FR1450427A (fr) | Composition de matière explosive et son procédé de fabrication | |
BE608816A (fr) | Récipient souple et son procédé de fabrication. | |
FR1257770A (fr) | Produit abrasif et son procédé de fabrication | |
FR1279304A (fr) | Récipient souple et son procédé de fabrication | |
FR1153302A (fr) | Matière céramique et son procédé de fabrication | |
FR1401951A (fr) | Matière filtrante et son procédé de fabrication | |
FR1424947A (fr) | Composition de moulage thermoplastique et son procédé de fabrication | |
FR1284723A (fr) | Objet abrasif et son procédé de fabrication | |
FR1334898A (fr) | Châssis-mère de moulage et son procédé de fabrication | |
FR1261460A (fr) | Transistron en matériau semi-conducteur et son procédé de production | |
FR1315520A (fr) | Semi-conducteur et son procédé de fabrication | |
FR1189799A (fr) | Matière astringente et son procédé de fabrication | |
FR1321789A (fr) | Matériau électrophotographique, son procédé de fabrication et son application | |
FR1311142A (fr) | Chaussure et son procédé de fabrication |