FR1202531A - Procédé pour mouiller la surface d'une pièce de silicium, applicable à la fabrication des redresseurs et des transistrons - Google Patents
Procédé pour mouiller la surface d'une pièce de silicium, applicable à la fabrication des redresseurs et des transistronsInfo
- Publication number
- FR1202531A FR1202531A FR1202531DA FR1202531A FR 1202531 A FR1202531 A FR 1202531A FR 1202531D A FR1202531D A FR 1202531DA FR 1202531 A FR1202531 A FR 1202531A
- Authority
- FR
- France
- Prior art keywords
- transistrons
- rectifiers
- wetting
- applicable
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000009736 wetting Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Current-Collector Devices For Electrically Propelled Vehicles (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB28614/57A GB894786A (en) | 1957-09-11 | 1957-09-11 | Improvements relating to the manufacture of silicon semi-conductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1202531A true FR1202531A (fr) | 1960-01-11 |
Family
ID=10278383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1202531D Expired FR1202531A (fr) | 1957-09-11 | 1958-09-11 | Procédé pour mouiller la surface d'une pièce de silicium, applicable à la fabrication des redresseurs et des transistrons |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE571042A (en, 2012) |
DE (1) | DE1260636B (en, 2012) |
FR (1) | FR1202531A (en, 2012) |
GB (1) | GB894786A (en, 2012) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE408226C (de) * | 1922-09-30 | 1925-01-14 | Arno Rysick | Typensetz- und Ablegevorrichtung mit Typen in nebeneinanderliegenden Rinnen |
BE520380A (en, 2012) * | 1952-06-02 | |||
US2801375A (en) * | 1955-08-01 | 1957-07-30 | Westinghouse Electric Corp | Silicon semiconductor devices and processes for making them |
-
0
- BE BE571042D patent/BE571042A/xx unknown
-
1957
- 1957-09-11 GB GB28614/57A patent/GB894786A/en not_active Expired
-
1958
- 1958-09-09 DE DEW24058A patent/DE1260636B/de active Pending
- 1958-09-11 FR FR1202531D patent/FR1202531A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1260636B (de) | 1968-02-08 |
BE571042A (en, 2012) | |
GB894786A (en) | 1962-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1192271A (fr) | Procédé pour produire un acier au silicium orienté | |
FR1135345A (fr) | Procédé pour la fabrication de redresseurs, transistors, et dispositifs analogues à partir d'un semi-conducteur | |
CH373359A (fr) | Procédé de fabrication de nitrure d'aluminium | |
FR1181255A (fr) | Procédé pour l'alcoylation de tétrachlorure de silicium ou d'alcoyl-ou arylchlorosilanes | |
FR1157770A (fr) | Procédé de fabrication de redresseurs ou de transistors à surfaces | |
FR1202531A (fr) | Procédé pour mouiller la surface d'une pièce de silicium, applicable à la fabrication des redresseurs et des transistrons | |
FR1326261A (fr) | Procédé de fabrication d'un composant à semi-conducteur | |
FR1126109A (fr) | Procédé pour la production de couches métalliques sur la surface des semi-conducteurs, de préférence pour la production de couches de blocage pour redresseurs et transistors, et dispositions de semi-conducteurs conformes à celles obtenues par lesdits procédés | |
FR1250785A (fr) | Procédé de fabrication d'acier au silicium à cristaux orientés | |
FR1192658A (fr) | Procédé pour la fabrication de redresseurs à semi-conducteurs | |
FR1244085A (fr) | Procédé perfectionné pour la fabrication d'élastomères oléfiniques | |
FR1209308A (fr) | Procédé de fabrication d'acier au silicium | |
BE594001A (fr) | Procédé de production d'acier an silicium à orientation préferée | |
FR1237002A (fr) | Procédé pour la fabrication d'éléments redresseurs à semi-conducteurs | |
FR1198903A (fr) | Procédé de fabrication d'outils à finir les engrenages | |
FR1355530A (fr) | Procédé pour la fabrication d'une 2-(tétrahydronaphtyl-1')-amino-imidazoline | |
FR1348274A (fr) | Procédé de fabrication de tôles d'acier au silicium non orienté | |
FR1246170A (fr) | Procédé de fabrication d'un halogénure de silicium purifié | |
FR1147041A (fr) | Procédé pour la fabrication d'outils à meuler et à polir, et outils conformes àceux obtenus | |
BE576774A (fr) | Procédé de fabrication de tôles et de bandes d'acier au silicium à cubes orientés. | |
FR1251093A (fr) | Procédé de fabrication d'alliages au silicium | |
FR73112E (fr) | Procédé pour l'alcoylation de tétrachlorure de silicium ou d'alcoyl ou arylchlorosilanes | |
FR1098711A (fr) | Procédé de collage d'une pièce sur une autre et son application à la fabrication de skis | |
FR1246764A (fr) | Procédé pour la préparation d'amines primaires | |
FR1263089A (fr) | Procédé pour la fabrication d'une vanne et vanne fabriquée selon ce procédé |