FR1157770A - Procédé de fabrication de redresseurs ou de transistors à surfaces - Google Patents

Procédé de fabrication de redresseurs ou de transistors à surfaces

Info

Publication number
FR1157770A
FR1157770A FR1157770DA FR1157770A FR 1157770 A FR1157770 A FR 1157770A FR 1157770D A FR1157770D A FR 1157770DA FR 1157770 A FR1157770 A FR 1157770A
Authority
FR
France
Prior art keywords
rectifiers
manufacturing process
surface transistors
transistors
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1157770A publication Critical patent/FR1157770A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F3/00—Changing the physical structure of non-ferrous metals or alloys by special physical methods, e.g. treatment with neutrons
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Thyristors (AREA)
  • Thermistors And Varistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1157770D 1955-08-05 1956-07-17 Procédé de fabrication de redresseurs ou de transistors à surfaces Expired FR1157770A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES45065A DE1153119B (de) 1955-08-05 1955-08-05 Verfahren zur Herstellung einer Halbleiteranordnung

Publications (1)

Publication Number Publication Date
FR1157770A true FR1157770A (fr) 1958-06-03

Family

ID=7485379

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1157770D Expired FR1157770A (fr) 1955-08-05 1956-07-17 Procédé de fabrication de redresseurs ou de transistors à surfaces

Country Status (5)

Country Link
US (1) US2798013A (fr)
CH (1) CH345079A (fr)
DE (1) DE1153119B (fr)
FR (1) FR1157770A (fr)
GB (1) GB818931A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE557039A (fr) * 1956-04-27
US2979428A (en) * 1957-04-11 1961-04-11 Rca Corp Semiconductor devices and methods of making them
US3070465A (en) * 1957-07-26 1962-12-25 Sony Corp Method of manufacturing a grown type semiconductor device
NL108503C (fr) * 1957-08-08
US3093882A (en) * 1958-09-30 1963-06-18 Siemens Ag Method for producing a silicon semiconductor device
US2995475A (en) * 1958-11-04 1961-08-08 Bell Telephone Labor Inc Fabrication of semiconductor devices
US3270257A (en) * 1964-02-19 1966-08-30 Premier Microwave Corp Disposable diode holder
DE1280420B (de) * 1964-04-02 1968-10-17 Siemens Ag Verfahren zum Kontaktieren von Halbleiterbauelementen
US3515953A (en) * 1967-03-21 1970-06-02 Rca Corp Adaptive diode having mobile doping impurities

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE461663A (fr) * 1943-05-01 1900-01-01
US2651009A (en) * 1952-05-03 1953-09-01 Bjorksten Res Lab Inc Transistor design
BE525280A (fr) * 1952-12-31 1900-01-01
US2743693A (en) * 1954-11-22 1956-05-01 Motorola Inc Transistor assembly jig

Also Published As

Publication number Publication date
US2798013A (en) 1957-07-02
DE1153119B (de) 1963-08-22
GB818931A (en) 1959-08-26
CH345079A (de) 1960-03-15

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