FR1190337A - Procédé de fabrication d'appareils électriques semi-conducteurs à monocristal semiconducteur, en particulier en silicium - Google Patents

Procédé de fabrication d'appareils électriques semi-conducteurs à monocristal semiconducteur, en particulier en silicium

Info

Publication number
FR1190337A
FR1190337A FR1190337DA FR1190337A FR 1190337 A FR1190337 A FR 1190337A FR 1190337D A FR1190337D A FR 1190337DA FR 1190337 A FR1190337 A FR 1190337A
Authority
FR
France
Prior art keywords
silicon
semiconductor devices
gold
manufacturing
electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1190337A publication Critical patent/FR1190337A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/268—Pb as the principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/00013—Fully indexed content
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01042—Molybdenum [Mo]
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)
  • Die Bonding (AREA)
  • Silicon Compounds (AREA)
  • High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
FR1190337D 1957-01-29 1958-01-21 Procédé de fabrication d'appareils électriques semi-conducteurs à monocristal semiconducteur, en particulier en silicium Expired FR1190337A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES52113A DE1042131B (de) 1957-01-29 1957-01-29 Verfahren zur Befestigung von elektrischen Leitungsanschluessen an Legierungselektroden in einkristallinen Halbleiterkoerpern, insbesondere aus Silizium

Publications (1)

Publication Number Publication Date
FR1190337A true FR1190337A (fr) 1959-10-12

Family

ID=7488570

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1190337D Expired FR1190337A (fr) 1957-01-29 1958-01-21 Procédé de fabrication d'appareils électriques semi-conducteurs à monocristal semiconducteur, en particulier en silicium

Country Status (6)

Country Link
US (1) US2931960A (forum.php)
CH (1) CH354858A (forum.php)
DE (1) DE1042131B (forum.php)
FR (1) FR1190337A (forum.php)
GB (1) GB879656A (forum.php)
NL (1) NL224227A (forum.php)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1194063B (de) * 1960-11-21 1965-06-03 Siemens Ag Halbleiteranordnung mit mehreren konzentrischen anlegierten Elektroden
NL260810A (forum.php) * 1961-02-03
DE1639311C2 (de) * 1968-03-08 1974-08-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Kontaktieren einer Halbleiteranordnung
US20060119465A1 (en) * 2004-12-03 2006-06-08 Dietsch G T Fuse with expanding solder
US8399995B2 (en) * 2009-01-16 2013-03-19 Infineon Technologies Ag Semiconductor device including single circuit element for soldering

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE517459A (forum.php) * 1952-02-07
NL99247C (forum.php) * 1954-03-05
NL204361A (forum.php) * 1955-04-22 1900-01-01
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
US2825667A (en) * 1955-05-10 1958-03-04 Rca Corp Methods of making surface alloyed semiconductor devices
BE558881A (forum.php) * 1956-07-06 1900-01-01

Also Published As

Publication number Publication date
GB879656A (en) 1961-10-11
CH354858A (de) 1961-06-15
DE1042131B (de) 1958-10-30
US2931960A (en) 1960-04-05
NL224227A (forum.php)

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