FR1143171A - Diode semi-conductrice - Google Patents
Diode semi-conductriceInfo
- Publication number
- FR1143171A FR1143171A FR1143171DA FR1143171A FR 1143171 A FR1143171 A FR 1143171A FR 1143171D A FR1143171D A FR 1143171DA FR 1143171 A FR1143171 A FR 1143171A
- Authority
- FR
- France
- Prior art keywords
- semiconductor diode
- diode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1143171X | 1954-11-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1143171A true FR1143171A (fr) | 1957-09-27 |
Family
ID=10877336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1143171D Expired FR1143171A (fr) | 1954-11-30 | 1955-11-28 | Diode semi-conductrice |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR1143171A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
NL (1) | NL202409A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1090329B (de) * | 1958-09-05 | 1960-10-06 | Siemens Ag | Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor |
DE1163461B (de) * | 1958-12-17 | 1964-02-20 | Nippon Electric Co | Flaechentransistor mit einem Konzentrationsgradienten der dotierenden Fremdstoffe ineiner Zone |
-
0
- NL NL202409D patent/NL202409A/xx unknown
-
1955
- 1955-11-28 FR FR1143171D patent/FR1143171A/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1090329B (de) * | 1958-09-05 | 1960-10-06 | Siemens Ag | Halbleiteranordnung mit mindestens einem in Durchlassrichtung betriebenen p-n-UEbergang, insbesondere Transistor |
DE1163461B (de) * | 1958-12-17 | 1964-02-20 | Nippon Electric Co | Flaechentransistor mit einem Konzentrationsgradienten der dotierenden Fremdstoffe ineiner Zone |
Also Published As
Publication number | Publication date |
---|---|
NL202409A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
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