FR1143171A - Semiconductor diode - Google Patents

Semiconductor diode

Info

Publication number
FR1143171A
FR1143171A FR1143171DA FR1143171A FR 1143171 A FR1143171 A FR 1143171A FR 1143171D A FR1143171D A FR 1143171DA FR 1143171 A FR1143171 A FR 1143171A
Authority
FR
France
Prior art keywords
semiconductor diode
diode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1143171A publication Critical patent/FR1143171A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
FR1143171D 1954-11-30 1955-11-28 Semiconductor diode Expired FR1143171A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1143171X 1954-11-30

Publications (1)

Publication Number Publication Date
FR1143171A true FR1143171A (en) 1957-09-27

Family

ID=10877336

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1143171D Expired FR1143171A (en) 1954-11-30 1955-11-28 Semiconductor diode

Country Status (2)

Country Link
FR (1) FR1143171A (en)
NL (1) NL202409A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090329B (en) * 1958-09-05 1960-10-06 Siemens Ag Semiconductor arrangement with at least one p-n junction operated in the forward direction, in particular transistor
DE1163461B (en) * 1958-12-17 1964-02-20 Nippon Electric Co Surface transistor with a concentration gradient of the doping impurities in a zone

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090329B (en) * 1958-09-05 1960-10-06 Siemens Ag Semiconductor arrangement with at least one p-n junction operated in the forward direction, in particular transistor
DE1163461B (en) * 1958-12-17 1964-02-20 Nippon Electric Co Surface transistor with a concentration gradient of the doping impurities in a zone

Also Published As

Publication number Publication date
NL202409A (en)

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