FR1114367A - Collecteur à crochet perfectionné pour transistor et méthode pour le fabriquer - Google Patents

Collecteur à crochet perfectionné pour transistor et méthode pour le fabriquer

Info

Publication number
FR1114367A
FR1114367A FR1114367DA FR1114367A FR 1114367 A FR1114367 A FR 1114367A FR 1114367D A FR1114367D A FR 1114367DA FR 1114367 A FR1114367 A FR 1114367A
Authority
FR
France
Prior art keywords
transistor
making
hook collector
advanced
advanced hook
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of FR1114367A publication Critical patent/FR1114367A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1114367D 1953-09-04 1954-09-03 Collecteur à crochet perfectionné pour transistor et méthode pour le fabriquer Expired FR1114367A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US378567A US2836521A (en) 1953-09-04 1953-09-04 Hook collector and method of producing same

Publications (1)

Publication Number Publication Date
FR1114367A true FR1114367A (fr) 1956-04-11

Family

ID=23493644

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1114367D Expired FR1114367A (fr) 1953-09-04 1954-09-03 Collecteur à crochet perfectionné pour transistor et méthode pour le fabriquer

Country Status (4)

Country Link
US (1) US2836521A (en, 2012)
BE (1) BE531626A (en, 2012)
FR (1) FR1114367A (en, 2012)
GB (1) GB754404A (en, 2012)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices
US2883313A (en) * 1954-08-16 1959-04-21 Rca Corp Semiconductor devices
US2899343A (en) * 1954-05-27 1959-08-11 Jsion
US3066051A (en) * 1957-05-14 1962-11-27 Sprague Electric Co Preparation of multiple p-n junction semiconductor crystals

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB807995A (en) * 1955-09-02 1959-01-28 Gen Electric Co Ltd Improvements in or relating to the production of semiconductor bodies
NL113003C (en, 2012) * 1956-08-10
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same
US3054033A (en) * 1957-05-21 1962-09-11 Sony Corp Junction type semiconductor device
US2961475A (en) * 1957-05-29 1960-11-22 Rca Corp Solid-state charge carrier valve
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same
US2974262A (en) * 1957-06-11 1961-03-07 Abraham George Solid state device and method of making same
US3150017A (en) * 1957-06-29 1964-09-22 Sony Corp Doping a pulled semiconductor crystal with impurities having different diffusion coefficients
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
NL106425C (en, 2012) * 1958-01-14
US2998334A (en) * 1958-03-07 1961-08-29 Transitron Electronic Corp Method of making transistors
US3109938A (en) * 1958-03-19 1963-11-05 Rauland Corp Semi-conductor device having a gas-discharge type switching characteristic
NL105824C (en, 2012) * 1958-06-26
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication
NL230316A (en, 2012) * 1958-08-07
DE1105522B (de) * 1958-11-12 1961-04-27 Licentia Gmbh Transistor mit einem scheibenfoermigen Halbleiterkoerper
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material
GB936181A (en) * 1959-05-19 1963-09-04 Nat Res Dev Improvements in and relating to solid-state electrical devices
US3092733A (en) * 1959-07-16 1963-06-04 Rauland Corp Four zone transistor having integral diode formed on base remote from transistor
US3049451A (en) * 1959-09-02 1962-08-14 Tung Sol Electric Inc Multiple zone semiconductor device and method of making the same
US3072504A (en) * 1959-10-20 1963-01-08 Texas Instruments Inc Junction growing technique
US3175934A (en) * 1960-01-19 1965-03-30 Hitachi Ltd Semiconductor switching element and process for producing the same
DE1184586B (de) * 1960-03-24 1964-12-31 Siemens Ag Verfahren zur Erzeugung einlegierter Dotierungszonen bzw. Elektroden an Halbleiteranordnungen
NL263771A (en, 2012) * 1960-04-26
NL125226C (en, 2012) * 1960-05-02
US3258371A (en) * 1962-02-01 1966-06-28 Semiconductor Res Found Silicon semiconductor device for high frequency, and method of its manufacture
US3307088A (en) * 1962-03-13 1967-02-28 Fujikawa Kyoichi Silver-lead alloy contacts containing dopants for semiconductors
US3268375A (en) * 1962-05-22 1966-08-23 Gordon J Ratcliff Alloy-diffusion process for fabricating germanium transistors
US3257589A (en) * 1962-05-22 1966-06-21 Texas Instruments Inc Transistors and the fabrication thereof
CH396228A (de) * 1962-05-29 1965-07-31 Siemens Ag Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium
US3235419A (en) * 1963-01-15 1966-02-15 Philips Corp Method of manufacturing semiconductor devices

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL67322C (en, 2012) * 1941-12-19
BE466591A (en, 2012) * 1945-07-13
US2449484A (en) * 1945-11-10 1948-09-14 Brush Dev Co Method of controlling the resistivity of p-type crystals
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
NL82014C (en, 2012) * 1949-11-30
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells
BE510303A (en, 2012) * 1951-11-16
BE524233A (en, 2012) * 1952-11-14

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899343A (en) * 1954-05-27 1959-08-11 Jsion
US2883313A (en) * 1954-08-16 1959-04-21 Rca Corp Semiconductor devices
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices
US3066051A (en) * 1957-05-14 1962-11-27 Sprague Electric Co Preparation of multiple p-n junction semiconductor crystals

Also Published As

Publication number Publication date
BE531626A (en, 2012)
US2836521A (en) 1958-05-27
GB754404A (en) 1956-08-08

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