FR1099887A - Method of manufacturing electrode systems comprising a surface layer of the p-type of conduction - Google Patents

Method of manufacturing electrode systems comprising a surface layer of the p-type of conduction

Info

Publication number
FR1099887A
FR1099887A FR1099887DA FR1099887A FR 1099887 A FR1099887 A FR 1099887A FR 1099887D A FR1099887D A FR 1099887DA FR 1099887 A FR1099887 A FR 1099887A
Authority
FR
France
Prior art keywords
conduction
type
surface layer
electrode systems
manufacturing electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1099887A publication Critical patent/FR1099887A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
FR1099887D 1953-05-07 1954-05-05 Method of manufacturing electrode systems comprising a surface layer of the p-type of conduction Expired FR1099887A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL1099887X 1953-05-07

Publications (1)

Publication Number Publication Date
FR1099887A true FR1099887A (en) 1955-09-12

Family

ID=19869115

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1099887D Expired FR1099887A (en) 1953-05-07 1954-05-05 Method of manufacturing electrode systems comprising a surface layer of the p-type of conduction

Country Status (3)

Country Link
DE (1) DE1018554B (en)
FR (1) FR1099887A (en)
NL (2) NL102310C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080692B (en) * 1956-01-09 1960-04-28 Int Standard Electric Corp Semiconductor diode, in particular switching diode, with a semiconductor body made of four layers of alternately opposite conductivity types
US3157937A (en) * 1960-09-30 1964-11-24 Honeywell Inc Method of making a semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB860400A (en) * 1958-07-17 1961-02-01 Ass Elect Ind Improvements relating to semi-conductor diodes
GB871161A (en) * 1959-05-13 1961-06-21 Ass Elect Ind Improvements relating to the production of junction transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080692B (en) * 1956-01-09 1960-04-28 Int Standard Electric Corp Semiconductor diode, in particular switching diode, with a semiconductor body made of four layers of alternately opposite conductivity types
US3157937A (en) * 1960-09-30 1964-11-24 Honeywell Inc Method of making a semiconductor device

Also Published As

Publication number Publication date
NL102310C (en)
DE1018554B (en) 1957-10-31
NL178164C (en)

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