FR1086903A - Method of manufacturing single crystals of semiconductors comprising one or more p-n junctions - Google Patents

Method of manufacturing single crystals of semiconductors comprising one or more p-n junctions

Info

Publication number
FR1086903A
FR1086903A FR1086903DA FR1086903A FR 1086903 A FR1086903 A FR 1086903A FR 1086903D A FR1086903D A FR 1086903DA FR 1086903 A FR1086903 A FR 1086903A
Authority
FR
France
Prior art keywords
junctions
semiconductors
single crystals
manufacturing single
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR1086903A publication Critical patent/FR1086903A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
FR1086903D 1952-08-13 1953-08-04 Method of manufacturing single crystals of semiconductors comprising one or more p-n junctions Expired FR1086903A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1086903XA 1952-08-13 1952-08-13

Publications (1)

Publication Number Publication Date
FR1086903A true FR1086903A (en) 1955-02-17

Family

ID=22323545

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1086903D Expired FR1086903A (en) 1952-08-13 1953-08-04 Method of manufacturing single crystals of semiconductors comprising one or more p-n junctions

Country Status (1)

Country Link
FR (1) FR1086903A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2999776A (en) * 1955-01-13 1961-09-12 Siemens Ag Method of producing differentiated doping zones in semiconductor crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2999776A (en) * 1955-01-13 1961-09-12 Siemens Ag Method of producing differentiated doping zones in semiconductor crystals

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