FR1094267A - Procédé de fabrication de monocristaux semi-conducteurs - Google Patents

Procédé de fabrication de monocristaux semi-conducteurs

Info

Publication number
FR1094267A
FR1094267A FR1094267DA FR1094267A FR 1094267 A FR1094267 A FR 1094267A FR 1094267D A FR1094267D A FR 1094267DA FR 1094267 A FR1094267 A FR 1094267A
Authority
FR
France
Prior art keywords
manufacturing process
single crystal
semiconductor single
crystal manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR1094267A publication Critical patent/FR1094267A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
FR1094267D 1953-03-06 1954-03-04 Procédé de fabrication de monocristaux semi-conducteurs Expired FR1094267A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL751126X 1953-03-06

Publications (1)

Publication Number Publication Date
FR1094267A true FR1094267A (fr) 1955-05-16

Family

ID=19824526

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1094267D Expired FR1094267A (fr) 1953-03-06 1954-03-04 Procédé de fabrication de monocristaux semi-conducteurs

Country Status (2)

Country Link
FR (1) FR1094267A (fr)
GB (1) GB751126A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1238448B (de) * 1957-07-26 1967-04-13 Siemens Ag Verfahren zum Dotieren eines stabfoermigen Halbleiterkoerpers

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITVI20110323A1 (it) * 2011-12-19 2013-06-20 Pvd Technologies Snc Di Vidani A E A Metodo di drogaggio forzato di un lingotto di materiale semiconduttore ed impianto che realizza tale metodo

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1238448B (de) * 1957-07-26 1967-04-13 Siemens Ag Verfahren zum Dotieren eines stabfoermigen Halbleiterkoerpers

Also Published As

Publication number Publication date
GB751126A (en) 1956-06-27

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