FR1083625A - Procédé de création de couches d'arrêt dans les semi-conducteurs - Google Patents

Procédé de création de couches d'arrêt dans les semi-conducteurs

Info

Publication number
FR1083625A
FR1083625A FR1083625DA FR1083625A FR 1083625 A FR1083625 A FR 1083625A FR 1083625D A FR1083625D A FR 1083625DA FR 1083625 A FR1083625 A FR 1083625A
Authority
FR
France
Prior art keywords
semiconductors
barrier layers
creating barrier
creating
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTE Sylvania Inc
Original Assignee
Sylvania Electric Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sylvania Electric Products Inc filed Critical Sylvania Electric Products Inc
Application granted granted Critical
Publication of FR1083625A publication Critical patent/FR1083625A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
FR1083625D 1952-06-19 1953-06-19 Procédé de création de couches d'arrêt dans les semi-conducteurs Expired FR1083625A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US294498A US2762730A (en) 1952-06-19 1952-06-19 Method of making barriers in semiconductors

Publications (1)

Publication Number Publication Date
FR1083625A true FR1083625A (fr) 1955-01-11

Family

ID=23133705

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1083625D Expired FR1083625A (fr) 1952-06-19 1953-06-19 Procédé de création de couches d'arrêt dans les semi-conducteurs

Country Status (5)

Country Link
US (1) US2762730A (fr)
DE (1) DE974364C (fr)
FR (1) FR1083625A (fr)
GB (1) GB744929A (fr)
NL (2) NL86490C (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE975756C (de) * 1953-08-04 1962-08-09 Standard Elek K Lorenz Ag Verfahren zur Herstellung von Halbleiterschichtkristallen mit mindestens einer p-n-p- bzw. n-p-n-Schicht
US2836520A (en) * 1953-08-17 1958-05-27 Westinghouse Electric Corp Method of making junction transistors
US2861017A (en) * 1953-09-30 1958-11-18 Honeywell Regulator Co Method of preparing semi-conductor devices
NL191674A (fr) * 1953-10-26
US2871149A (en) * 1955-05-02 1959-01-27 Sprague Electric Co Semiconductor method
US2817609A (en) * 1955-06-24 1957-12-24 Hughes Aircraft Co Alkali metal alloy agents for autofluxing in junction forming
US2973290A (en) * 1956-07-05 1961-02-28 Gen Electric Co Ltd Production of semi-conductor bodies by impurity diffusion through station ary interface
US2990439A (en) * 1956-12-18 1961-06-27 Gen Electric Co Ltd Thermocouples
US3070465A (en) * 1957-07-26 1962-12-25 Sony Corp Method of manufacturing a grown type semiconductor device
NL278494A (fr) * 1961-05-19
US3231500A (en) * 1962-10-09 1966-01-25 Martin S Frant Semiconducting perylene complexes of inorganic halides
GB1018395A (en) * 1963-05-21 1966-01-26 Ass Elect Ind Recrystallization of sulphides of cadmium and zin'c in thin films

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1654910A (en) * 1924-10-31 1928-01-03 Barbier Noel Jean Process for treating articles in metallic baths
NL70486C (fr) * 1945-12-29
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
US2708646A (en) * 1951-05-09 1955-05-17 Hughes Aircraft Co Methods of making germanium alloy semiconductors
DE885756C (de) * 1951-10-08 1953-06-25 Telefunken Gmbh Verfahren zur Herstellung von p- oder n-leitenden Schichten

Also Published As

Publication number Publication date
DE974364C (de) 1960-12-01
NL86490C (fr) 1957-05-15
NL178978B (nl)
GB744929A (en) 1956-02-15
US2762730A (en) 1956-09-11

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