FI943553A - Upokas, erityisesti tukiupokas - Google Patents

Upokas, erityisesti tukiupokas Download PDF

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Publication number
FI943553A
FI943553A FI943553A FI943553A FI943553A FI 943553 A FI943553 A FI 943553A FI 943553 A FI943553 A FI 943553A FI 943553 A FI943553 A FI 943553A FI 943553 A FI943553 A FI 943553A
Authority
FI
Finland
Prior art keywords
crucible
especially supporting
supporting
supporting crucible
Prior art date
Application number
FI943553A
Other languages
English (en)
Swedish (sv)
Other versions
FI943553A0 (fi
Inventor
Volker Rauhut
Original Assignee
Schunk Kohlenstofftechnik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schunk Kohlenstofftechnik Gmbh filed Critical Schunk Kohlenstofftechnik Gmbh
Publication of FI943553A0 publication Critical patent/FI943553A0/fi
Publication of FI943553A publication Critical patent/FI943553A/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/14—Crucibles or vessels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/71—Ceramic products containing macroscopic reinforcing agents
    • C04B35/78—Ceramic products containing macroscopic reinforcing agents containing non-metallic materials
    • C04B35/80—Fibres, filaments, whiskers, platelets, or the like
    • C04B35/83—Carbon fibres in a carbon matrix
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Structural Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
FI943553A 1993-07-30 1994-07-29 Upokas, erityisesti tukiupokas FI943553A (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4325522A DE4325522C1 (de) 1993-07-30 1993-07-30 Tiegel, insbesondere Stütztiegel

Publications (2)

Publication Number Publication Date
FI943553A0 FI943553A0 (fi) 1994-07-29
FI943553A true FI943553A (fi) 1995-01-31

Family

ID=6494028

Family Applications (1)

Application Number Title Priority Date Filing Date
FI943553A FI943553A (fi) 1993-07-30 1994-07-29 Upokas, erityisesti tukiupokas

Country Status (5)

Country Link
EP (1) EP0639662A1 (fi)
JP (1) JPH0769777A (fi)
KR (1) KR950003226A (fi)
DE (1) DE4325522C1 (fi)
FI (1) FI943553A (fi)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5858486A (en) * 1995-02-27 1999-01-12 Sgl Carbon Composites, Inc. High purity carbon/carbon composite useful as a crucible susceptor
JP4634420B2 (ja) * 1996-06-27 2011-02-16 東洋炭素株式会社 単結晶引き上げ用ルツボの製造方法
JP4686509B2 (ja) * 1996-06-27 2011-05-25 東洋炭素株式会社 単結晶引き上げ用ルツボ
JP4686508B2 (ja) * 1996-06-27 2011-05-25 東洋炭素株式会社 単結晶引き上げ用ルツボ
JP4634419B2 (ja) * 1996-06-27 2011-02-16 東洋炭素株式会社 単結晶引き上げ用ルツボ
JP2007314420A (ja) * 1996-06-27 2007-12-06 Toyo Tanso Kk 単結晶引き上げ用ルツボ
FR2804131A1 (fr) * 2000-01-20 2001-07-27 Lorraine Carbone Porte-creuset pour le tirage de monocristaux
FR2804132B1 (fr) * 2000-01-20 2002-06-07 Lorraine Carbone Porte-creuset pour le tirage de monocristaux
CN1333335C (zh) 2002-10-03 2007-08-22 松下电器产业株式会社 键控事件控制设备
DE102011052016A1 (de) * 2011-07-21 2013-01-24 Deutsches Zentrum für Luft- und Raumfahrt e.V. Bausatz für einen Schmelztiegel, Schmelztiegel und Verfahren zur Herstellung eines Schmelztiegels
CN102304751A (zh) * 2011-09-15 2012-01-04 江苏华盛天龙光电设备股份有限公司 一种蓝宝石晶体生长用复合坩埚

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0177194A3 (en) * 1984-09-05 1988-04-20 Kabushiki Kaisha Toshiba Apparatus for production of compound semiconductor single crystal
JPS63166790A (ja) * 1986-12-26 1988-07-09 Toshiba Ceramics Co Ltd シリコン単結晶引上装置
SU1487514A1 (ru) * 1987-10-19 1990-10-15 Gnii Pi Redkometa Подставка под кварцевый тигель ;
DE4007053A1 (de) * 1989-03-21 1990-09-27 Schunk Kohlenstofftechnik Gmbh Graphittiegel, verfahren zu seiner herstellung und verwendung

Also Published As

Publication number Publication date
EP0639662A1 (de) 1995-02-22
FI943553A0 (fi) 1994-07-29
DE4325522C1 (de) 1994-11-17
KR950003226A (ko) 1995-02-16
JPH0769777A (ja) 1995-03-14

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Legal Events

Date Code Title Description
FD Application lapsed