FI853232A0 - Foerfarande och anordning foer utfaellning av ett tunnt skikt av en foerening innehaollande minst en katjonisk komponent och minst en anjonisk komponent pao ett substrat. - Google Patents

Foerfarande och anordning foer utfaellning av ett tunnt skikt av en foerening innehaollande minst en katjonisk komponent och minst en anjonisk komponent pao ett substrat.

Info

Publication number
FI853232A0
FI853232A0 FI853232A FI853232A FI853232A0 FI 853232 A0 FI853232 A0 FI 853232A0 FI 853232 A FI853232 A FI 853232A FI 853232 A FI853232 A FI 853232A FI 853232 A0 FI853232 A0 FI 853232A0
Authority
FI
Finland
Prior art keywords
komponent
minst
ett
och
utfaellning
Prior art date
Application number
FI853232A
Other languages
English (en)
Other versions
FI853232L (fi
Inventor
Yann Florent Nicolau
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of FI853232A0 publication Critical patent/FI853232A0/fi
Publication of FI853232L publication Critical patent/FI853232L/fi

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005Epitaxial layer growth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02557Sulfides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Chemically Coating (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
FI853232A 1984-08-23 1985-08-22 Foerfarande och anordning foer utfaellning av ett tunnt skikt av en foerening innehaollande minst en katjonisk komponent och minst en anjonisk komponent pao ett substrat. FI853232L (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8413118A FR2569427B1 (fr) 1984-08-23 1984-08-23 Procede et dispositif de depot sur un substrat d'une couche mince d'un compose comportant au moins un constituant cationique et au moins un constituant anionique

Publications (2)

Publication Number Publication Date
FI853232A0 true FI853232A0 (fi) 1985-08-22
FI853232L FI853232L (fi) 1986-02-24

Family

ID=9307186

Family Applications (1)

Application Number Title Priority Date Filing Date
FI853232A FI853232L (fi) 1984-08-23 1985-08-22 Foerfarande och anordning foer utfaellning av ett tunnt skikt av en foerening innehaollande minst en katjonisk komponent och minst en anjonisk komponent pao ett substrat.

Country Status (6)

Country Link
US (1) US4675207A (fi)
EP (1) EP0178955A1 (fi)
JP (1) JPS6164881A (fi)
AU (1) AU568474B2 (fi)
FI (1) FI853232L (fi)
FR (1) FR2569427B1 (fi)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5002824A (en) * 1986-11-28 1991-03-26 Rockwell International Corporation Substrates containing electrically conducting coatings and method of producing same
US4938840A (en) * 1989-04-19 1990-07-03 Schaechter Friedrich Uniform treatment of large quantities of small parts
JP2913808B2 (ja) * 1990-09-25 1999-06-28 住友電気工業株式会社 ZnSe青色発光素子の製造方法
JPH06267848A (ja) * 1993-03-10 1994-09-22 Shin Etsu Handotai Co Ltd エピタキシャルウエーハ及びその製造方法
WO2004066361A2 (en) * 2003-01-22 2004-08-05 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
EP1695388A2 (en) * 2003-12-01 2006-08-30 The Regents Of The University Of California Multiband semiconductor compositions for photovoltaic devices
US20100090164A1 (en) * 2008-06-10 2010-04-15 Xiaogang Peng Indium arsenide nanocrystals and methods of making the same
FR2960167B1 (fr) 2010-05-21 2013-02-08 Centre Nat Rech Scient Procede d'obtention de couches minces
BR102015027491B1 (pt) * 2015-10-29 2021-02-23 Universidade Estadual Paulista Julio De Mesquita Filho equipamento automático para deposição de filmes finos

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466190A (en) * 1965-06-16 1969-09-09 Matsushita Electric Ind Co Ltd Method of making films of inorganic compounds
US4061830A (en) * 1975-12-23 1977-12-06 Ppg Industries, Inc. Selective solar energy receiver and method for its production
US4061930A (en) * 1976-06-11 1977-12-06 Rohr Industries, Incorporated Base drive inhibit circuit

Also Published As

Publication number Publication date
US4675207A (en) 1987-06-23
AU568474B2 (en) 1987-12-24
AU4621185A (en) 1986-02-27
FI853232L (fi) 1986-02-24
JPS6164881A (ja) 1986-04-03
FR2569427A1 (fr) 1986-02-28
EP0178955A1 (fr) 1986-04-23
FR2569427B1 (fr) 1986-11-14

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Legal Events

Date Code Title Description
FD Application lapsed

Owner name: COMMISSARIAT A L ENERGIE ATOMIQUE