FI63127C - Kondensatorminne - Google Patents
Kondensatorminne Download PDFInfo
- Publication number
- FI63127C FI63127C FI770896A FI770896A FI63127C FI 63127 C FI63127 C FI 63127C FI 770896 A FI770896 A FI 770896A FI 770896 A FI770896 A FI 770896A FI 63127 C FI63127 C FI 63127C
- Authority
- FI
- Finland
- Prior art keywords
- word
- bit
- memory
- capacitor
- capacitors
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 description 25
- 238000009792 diffusion process Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- NHWNVPNZGGXQQV-UHFFFAOYSA-J [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O Chemical compound [Si+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O NHWNVPNZGGXQQV-UHFFFAOYSA-J 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67219776 | 1976-03-31 | ||
US05/672,197 US4080590A (en) | 1976-03-31 | 1976-03-31 | Capacitor storage memory |
Publications (3)
Publication Number | Publication Date |
---|---|
FI770896A FI770896A (US07166745-20070123-C00016.png) | 1977-10-01 |
FI63127B FI63127B (fi) | 1982-12-31 |
FI63127C true FI63127C (fi) | 1983-04-11 |
Family
ID=24697550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI770896A FI63127C (fi) | 1976-03-31 | 1977-03-22 | Kondensatorminne |
Country Status (15)
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4230954A (en) * | 1978-12-29 | 1980-10-28 | International Business Machines Corporation | Permanent or semipermanent charge transfer storage systems |
US4287576A (en) * | 1980-03-26 | 1981-09-01 | International Business Machines Corporation | Sense amplifying system for memories with small cells |
US4301519A (en) * | 1980-05-02 | 1981-11-17 | International Business Machines Corporation | Sensing technique for memories with small cells |
US4445201A (en) * | 1981-11-30 | 1984-04-24 | International Business Machines Corporation | Simple amplifying system for a dense memory array |
US4574365A (en) * | 1983-04-18 | 1986-03-04 | International Business Machines Corporation | Shared access lines memory cells |
US4652898A (en) * | 1984-07-19 | 1987-03-24 | International Business Machines Corporation | High speed merged charge memory |
US4648073A (en) * | 1984-12-31 | 1987-03-03 | International Business Machines Corporation | Sequential shared access lines memory cells |
US5589707A (en) * | 1994-11-07 | 1996-12-31 | International Business Machines Corporation | Multi-surfaced capacitor for storing more charge per horizontal chip area |
US7031136B2 (en) * | 2002-04-09 | 2006-04-18 | Ngimat Co. | Variable capacitors, composite materials |
US9595526B2 (en) * | 2013-08-09 | 2017-03-14 | Apple Inc. | Multi-die fine grain integrated voltage regulation |
US10468381B2 (en) | 2014-09-29 | 2019-11-05 | Apple Inc. | Wafer level integration of passive devices |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3852800A (en) * | 1971-08-02 | 1974-12-03 | Texas Instruments Inc | One transistor dynamic memory cell |
US3931465A (en) * | 1975-01-13 | 1976-01-06 | Rca Corporation | Blooming control for charge coupled imager |
US3987474A (en) * | 1975-01-23 | 1976-10-19 | Massachusetts Institute Of Technology | Non-volatile charge storage elements and an information storage apparatus employing such elements |
US3979734A (en) * | 1975-06-16 | 1976-09-07 | International Business Machines Corporation | Multiple element charge storage memory cell |
US3986180A (en) * | 1975-09-22 | 1976-10-12 | International Business Machines Corporation | Depletion mode field effect transistor memory system |
-
1976
- 1976-03-31 US US05/672,197 patent/US4080590A/en not_active Expired - Lifetime
-
1977
- 1977-01-28 JP JP793077A patent/JPS52119828A/ja active Granted
- 1977-02-02 NL NL7701055A patent/NL7701055A/xx not_active Application Discontinuation
- 1977-02-12 DE DE2705992A patent/DE2705992B2/de active Granted
- 1977-02-14 AT AT0097377A patent/AT377378B/de not_active IP Right Cessation
- 1977-02-14 CH CH179177A patent/CH607232A5/xx not_active IP Right Cessation
- 1977-02-25 BE BE175275A patent/BE851845A/xx not_active IP Right Cessation
- 1977-03-04 SE SE7702445A patent/SE417381B/xx not_active IP Right Cessation
- 1977-03-04 IT IT20890/77A patent/IT1113763B/it active
- 1977-03-22 FI FI770896A patent/FI63127C/fi not_active IP Right Cessation
- 1977-03-22 BR BR7701807A patent/BR7701807A/pt unknown
- 1977-03-25 AU AU23651/77A patent/AU501754B2/en not_active Expired
- 1977-03-29 DD DD7700198121A patent/DD130698A5/xx unknown
- 1977-03-30 SU SU772467160A patent/SU843787A3/ru active
- 1977-03-30 ES ES457351A patent/ES457351A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2705992A1 (de) | 1977-10-13 |
AU2365177A (en) | 1978-09-28 |
JPS52119828A (en) | 1977-10-07 |
AU501754B2 (en) | 1979-06-28 |
AT377378B (de) | 1985-03-11 |
SU843787A3 (ru) | 1981-06-30 |
ES457351A1 (es) | 1978-02-01 |
CH607232A5 (US07166745-20070123-C00016.png) | 1978-11-30 |
JPS5634953B2 (US07166745-20070123-C00016.png) | 1981-08-13 |
SE7702445L (sv) | 1977-10-01 |
NL7701055A (nl) | 1977-10-04 |
SE417381B (sv) | 1981-03-09 |
IT1113763B (it) | 1986-01-20 |
FI63127B (fi) | 1982-12-31 |
US4080590A (en) | 1978-03-21 |
ATA97377A (de) | 1984-07-15 |
DE2705992B2 (de) | 1978-05-24 |
BR7701807A (pt) | 1978-01-24 |
BE851845A (fr) | 1977-06-16 |
DE2705992C3 (US07166745-20070123-C00016.png) | 1979-01-25 |
DD130698A5 (de) | 1978-04-19 |
FI770896A (US07166745-20070123-C00016.png) | 1977-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5363327A (en) | Buried-sidewall-strap two transistor one capacitor trench cell | |
EP0031490B1 (en) | One device field effect transistor ac stable random access memory array | |
EP0055572B1 (en) | A semiconductor memory device | |
US4021789A (en) | Self-aligned integrated circuits | |
US4907047A (en) | Semiconductor memory device | |
EP0135036A2 (en) | Semiconductor memory | |
FI63127C (fi) | Kondensatorminne | |
US4733374A (en) | Dynamic semiconductor memory device | |
EP0031491B1 (en) | Sensing system for a capacitive semiconductor memory | |
US4918500A (en) | Semiconductor device having trench capacitor and manufacturing method therefor | |
US5780335A (en) | Method of forming a buried-sidewall-strap two transistor one capacitor trench cell | |
US5274586A (en) | Semiconductor device having a capacitor dielectric film of multilayer structure and a method of controlling the same | |
US4978635A (en) | Method of making a semiconductor memory device | |
KR100682679B1 (ko) | Dram-셀 장치 및 그 제조 방법 | |
US5010379A (en) | Semiconductor memory device with two storage nodes | |
US4335450A (en) | Non-destructive read out field effect transistor memory cell system | |
US4040017A (en) | Injected charge capacitor memory | |
GB2149250A (en) | Dynamic memory | |
US4230954A (en) | Permanent or semipermanent charge transfer storage systems | |
US4353082A (en) | Buried sense line V-groove MOS random access memory | |
US5183774A (en) | Method of making a semiconductor memory device | |
US4219834A (en) | One-device monolithic random access memory and method of fabricating same | |
EP0107921B1 (en) | A dynamic semiconductor memory device | |
US4196389A (en) | Test site for a charged coupled device (CCD) array | |
US5200353A (en) | Method of manufacturing a semiconductor device having trench capacitor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM | Patent lapsed |
Owner name: INTERNATIONAL BUSINESS MACHINES |