FI57673C - Magnetisk domaenanordning - Google Patents
Magnetisk domaenanordning Download PDFInfo
- Publication number
- FI57673C FI57673C FI2693/73A FI269373A FI57673C FI 57673 C FI57673 C FI 57673C FI 2693/73 A FI2693/73 A FI 2693/73A FI 269373 A FI269373 A FI 269373A FI 57673 C FI57673 C FI 57673C
- Authority
- FI
- Finland
- Prior art keywords
- amorphous
- magnetic
- domains
- substrate
- medium
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 217
- 239000000758 substrate Substances 0.000 claims description 77
- 239000000463 material Substances 0.000 claims description 71
- 239000000696 magnetic material Substances 0.000 claims description 43
- 230000005415 magnetization Effects 0.000 claims description 35
- 230000005381 magnetic domain Effects 0.000 claims description 18
- 229910000531 Co alloy Inorganic materials 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 8
- 150000002910 rare earth metals Chemical class 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 2
- 240000008042 Zea mays Species 0.000 claims 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 claims 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 claims 1
- 235000005822 corn Nutrition 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 229910002058 ternary alloy Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 107
- 239000010408 film Substances 0.000 description 106
- 239000000126 substance Substances 0.000 description 95
- 238000012546 transfer Methods 0.000 description 34
- 238000000151 deposition Methods 0.000 description 25
- 230000008021 deposition Effects 0.000 description 25
- 230000006870 function Effects 0.000 description 22
- 238000001704 evaporation Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 230000008020 evaporation Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000005284 excitation Effects 0.000 description 15
- 230000001066 destructive effect Effects 0.000 description 13
- 230000003993 interaction Effects 0.000 description 13
- 238000007792 addition Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 12
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 11
- 239000003973 paint Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000012528 membrane Substances 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000002411 adverse Effects 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 6
- 229910000889 permalloy Inorganic materials 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 235000002639 sodium chloride Nutrition 0.000 description 6
- 239000011780 sodium chloride Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000005294 ferromagnetic effect Effects 0.000 description 5
- 239000004615 ingredient Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000009834 vaporization Methods 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000002223 garnet Substances 0.000 description 4
- 239000006249 magnetic particle Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910001004 magnetic alloy Inorganic materials 0.000 description 3
- 238000010587 phase diagram Methods 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000005347 demagnetization Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007847 structural defect Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 240000007124 Brassica oleracea Species 0.000 description 1
- 235000003899 Brassica oleracea var acephala Nutrition 0.000 description 1
- 235000011301 Brassica oleracea var capitata Nutrition 0.000 description 1
- 235000001169 Brassica oleracea var oleracea Nutrition 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005293 ferrimagnetic effect Effects 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- ZSOJHTHUCUGDHS-UHFFFAOYSA-N gadolinium iron Chemical compound [Fe].[Gd] ZSOJHTHUCUGDHS-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- QEVHRUUCFGRFIF-MDEJGZGSSA-N reserpine Chemical compound O([C@H]1[C@@H]([C@H]([C@H]2C[C@@H]3C4=C(C5=CC=C(OC)C=C5N4)CCN3C[C@H]2C1)C(=O)OC)OC)C(=O)C1=CC(OC)=C(OC)C(OC)=C1 QEVHRUUCFGRFIF-MDEJGZGSSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/085—Generating magnetic fields therefor, e.g. uniform magnetic field for magnetic domain stabilisation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0036—Magneto-optical materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
- G11B11/10586—Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material
- G11B11/10589—Details
- G11B11/10591—Details for improving write-in properties, e.g. Curie-point temperature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0866—Detecting magnetic domains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/132—Amorphous metallic alloys, e.g. glassy metals containing cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/133—Amorphous metallic alloys, e.g. glassy metals containing rare earth metals
- H01F10/135—Amorphous metallic alloys, e.g. glassy metals containing rare earth metals containing transition metals
Landscapes
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Magnetic Films (AREA)
- Soft Magnetic Materials (AREA)
- Physical Vapour Deposition (AREA)
- Measuring Magnetic Variables (AREA)
- Developing Agents For Electrophotography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28451372A | 1972-08-29 | 1972-08-29 | |
US28451372 | 1972-08-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
FI57673B FI57673B (fi) | 1980-05-30 |
FI57673C true FI57673C (fi) | 1980-09-10 |
Family
ID=23090479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI2693/73A FI57673C (fi) | 1972-08-29 | 1973-08-29 | Magnetisk domaenanordning |
Country Status (13)
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5061111A (enrdf_load_stackoverflow) * | 1973-09-28 | 1975-05-26 | ||
JPS5163492A (en) * | 1974-11-29 | 1976-06-01 | Kokusai Denshin Denwa Co Ltd | Jiseiusumakuno seizohoho |
US4013803A (en) * | 1975-10-30 | 1977-03-22 | Sperry Rand Corporation | Fabrication of amorphous bubble film devices |
JPS5850337B2 (ja) * | 1976-10-26 | 1983-11-10 | 富士ゼロックス株式会社 | プリンタ |
DE3317101A1 (de) * | 1982-05-10 | 1983-11-10 | Canon K.K., Tokyo | Magnetooptischer aufzeichnungstraeger |
JPS58196639A (ja) * | 1982-05-10 | 1983-11-16 | Canon Inc | 光熱磁気記録媒体 |
JPS5961011A (ja) * | 1982-09-30 | 1984-04-07 | Ricoh Co Ltd | 光磁気記録媒体 |
JPS61141925A (ja) * | 1985-12-14 | 1986-06-28 | Kobe Steel Ltd | 原料粉末予熱装置の排熱利用方法 |
JPS6319541U (enrdf_load_stackoverflow) * | 1986-07-22 | 1988-02-09 | ||
CN114214507B (zh) * | 2021-12-17 | 2023-08-08 | 安徽省湖滨机械厂 | 一种高性能铁基非晶纳米晶带材的热处理装置 |
CN119742138A (zh) * | 2025-03-05 | 2025-04-01 | 安徽大学 | 一种自发磁畴转变的稀土磁性材料、制备方法、应用 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3427154A (en) * | 1964-09-11 | 1969-02-11 | Ibm | Amorphous alloys and process therefor |
-
1973
- 1973-05-21 GB GB2404173A patent/GB1436011A/en not_active Expired
- 1973-05-28 ZA ZA00733619A patent/ZA733619B/xx unknown
- 1973-06-12 IT IT25171/73A patent/IT989040B/it active
- 1973-07-16 JP JP7938473A patent/JPS5734588B2/ja not_active Expired
- 1973-07-27 SE SE7310450A patent/SE395982B/xx unknown
- 1973-08-03 CA CA178,079A patent/CA1017450A/en not_active Expired
- 1973-08-09 FR FR7329782A patent/FR2198166B1/fr not_active Expired
- 1973-08-09 FR FR7329781A patent/FR2198216B1/fr not_active Expired
- 1973-08-09 FR FR7329783A patent/FR2198232B1/fr not_active Expired
- 1973-08-11 ES ES417823A patent/ES417823A1/es not_active Expired
- 1973-08-14 CH CH1171773A patent/CH554049A/xx not_active IP Right Cessation
- 1973-08-24 DE DE2342886A patent/DE2342886C3/de not_active Expired
- 1973-08-27 NO NO3368/73A patent/NO146381C/no unknown
- 1973-08-28 DK DK473473A patent/DK144153C/da not_active IP Right Cessation
- 1973-08-29 FI FI2693/73A patent/FI57673C/fi active
-
1981
- 1981-08-06 JP JP56122563A patent/JPS5810727B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS57172318A (en) | 1982-10-23 |
DE2342886B2 (de) | 1980-09-25 |
FR2198166B1 (enrdf_load_stackoverflow) | 1976-05-07 |
DK144153B (da) | 1981-12-21 |
SE395982B (sv) | 1977-08-29 |
CH554049A (de) | 1974-09-13 |
JPS4947043A (enrdf_load_stackoverflow) | 1974-05-07 |
DE2342886A1 (de) | 1974-03-28 |
FI57673B (fi) | 1980-05-30 |
FR2198216B1 (enrdf_load_stackoverflow) | 1978-01-20 |
JPS5734588B2 (enrdf_load_stackoverflow) | 1982-07-23 |
GB1436011A (en) | 1976-05-19 |
IT989040B (it) | 1975-05-20 |
DE2342886C3 (de) | 1981-09-24 |
ES417823A1 (es) | 1976-06-16 |
ZA733619B (en) | 1975-01-29 |
NO146381B (no) | 1982-06-07 |
FR2198216A1 (enrdf_load_stackoverflow) | 1974-03-29 |
NO146381C (no) | 1982-09-15 |
FR2198166A1 (enrdf_load_stackoverflow) | 1974-03-29 |
AU5879673A (en) | 1975-02-06 |
FR2198232B1 (enrdf_load_stackoverflow) | 1976-06-18 |
DK144153C (da) | 1982-06-21 |
JPS5810727B2 (ja) | 1983-02-26 |
CA1017450A (en) | 1977-09-13 |
FR2198232A1 (enrdf_load_stackoverflow) | 1974-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3965463A (en) | Apparatus using amorphous magnetic compositions | |
US3949387A (en) | Beam addressable film using amorphous magnetic material | |
JPS59210630A (ja) | 磁気薄膜構造体の製造方法 | |
FI57673C (fi) | Magnetisk domaenanordning | |
US7914916B2 (en) | Thermally stable high anisotropic high magnetic moment films | |
Davies et al. | The design of single crystal materials for magnetic bubble domain applications | |
US5612131A (en) | Composite magneto-optic memory and media | |
De Wit | Soft magnetic multilayers | |
US4670316A (en) | Thermo-magnetic recording materials supporting small stable domains | |
Fujimori et al. | Huge magnetostriction of amorphous bulk (Sm, Tb) Fe2-B with low exciting fields | |
Shin et al. | Effects of sputtering pressure on magnetic and magneto‐optical properties in compositionally modulated Co/Pd thin films | |
EP0324854A1 (en) | Optomagnetic recording medium and process for its manufacture | |
EP0125536A2 (en) | Thermo-magnetic recording materials supporting small stable domains | |
Maeno et al. | Magnetic properties of multiple‐structure multilayered Co/Pd films | |
JPH09501790A (ja) | 磁気−光学記録媒体 | |
JPS60187954A (ja) | 磁性薄膜記録媒体 | |
JP2738733B2 (ja) | 磁性膜 | |
Kaidatzis | Mn-Based Perpendicular Magnetic Tunnel Junctions | |
Togami | Amorphous GdCo Thin Films for High Density Thermomagnetic Recording | |
Frost | Perpendicular Anisotropy in Heusler Alloy Thin Films for CPP-GMR Devices | |
Tran | High target utilisation sputtering for the development of advanced materials for magnetic data storage applications | |
Wernick | Magnetic Materials Thin Films and Particles | |
ROBERTS | MAGNETIC PROPERTIES OF SOME AMORPHOUS RARE-EARTH-TRANSITION METAL ALLOYS PREPARED BY DUAL-SOURCE EVAPORATION. | |
Contreras et al. | In-plane anisotropy studies in amorphous CoFeNb films | |
Huang | Cobalt-platinum and iron-platinum nanoparticles for high density magnetic recording |