FI20116113A - Lateral connected bulk wave filter with improved pass band characteristics - Google Patents

Lateral connected bulk wave filter with improved pass band characteristics Download PDF

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Publication number
FI20116113A
FI20116113A FI20116113A FI20116113A FI20116113A FI 20116113 A FI20116113 A FI 20116113A FI 20116113 A FI20116113 A FI 20116113A FI 20116113 A FI20116113 A FI 20116113A FI 20116113 A FI20116113 A FI 20116113A
Authority
FI
Finland
Prior art keywords
vibration layer
frequency band
filter
wave filter
coupled
Prior art date
Application number
FI20116113A
Other languages
Finnish (fi)
Swedish (sv)
Other versions
FI124732B (en
Inventor
Johanna Meltaus
Tuomas Pensala
Original Assignee
Teknologian Tutkimuskeskus Vtt Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknologian Tutkimuskeskus Vtt Oy filed Critical Teknologian Tutkimuskeskus Vtt Oy
Priority to FI20116113A priority Critical patent/FI124732B/en
Priority to KR1020147015834A priority patent/KR101977334B1/en
Priority to JP2014540529A priority patent/JP2015502065A/en
Priority to EP12847501.9A priority patent/EP2777153B1/en
Priority to CN201280066944.8A priority patent/CN104205632B/en
Priority to PCT/FI2012/051096 priority patent/WO2013068652A1/en
Priority to US14/357,220 priority patent/US9219466B2/en
Publication of FI20116113A publication Critical patent/FI20116113A/en
Application granted granted Critical
Publication of FI124732B publication Critical patent/FI124732B/en
Priority to JP2018052320A priority patent/JP6564096B2/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/0211—Means for compensation or elimination of undesirable effects of reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques

Abstract

The invention relates to a laterally coupled bulk acoustic wave (LBAW) filter (70) comprising a vibration layer (73) for carrying bulk acoustic waves, electrode means (71, 72, 74) comprising a first electrode (71) coupled to the vibration layer (73) for exciting to the vibration layer (73) at least one longitudinal wave mode having a first frequency band and one shear wave mode having a second frequency band, and a second electrode (72) coupled to the vibration layer (73) for sensing the filter pass signal, the first and second electrodes (71, 72) being laterally arranged with respect to each other, and an acoustic reflector structure (75) in acoustic connection with the vibration layer(73). According to the invention, the reflector structure (75) is adapted to acoustically isolate the vibration layer (73) from its surroundings at the first frequency band more efficiently than at the second frequency band for suppressing the effect of the shear wave mode at the second frequency band from the filter pass signal. The invention helps to improve the quality of LBAW filter passbands.
FI20116113A 2011-11-11 2011-11-11 Lateral connected bulk wave filter with improved passband characteristics FI124732B (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FI20116113A FI124732B (en) 2011-11-11 2011-11-11 Lateral connected bulk wave filter with improved passband characteristics
KR1020147015834A KR101977334B1 (en) 2011-11-11 2012-11-09 Laterally coupled bulk acoustic wave filter with improved passband characteristics
JP2014540529A JP2015502065A (en) 2011-11-11 2012-11-09 Transversely coupled bulk acoustic wave filter with improved passband characteristics
EP12847501.9A EP2777153B1 (en) 2011-11-11 2012-11-09 Laterally coupled bulk acoustic wave filter with improved passband characteristics
CN201280066944.8A CN104205632B (en) 2011-11-11 2012-11-09 There is the lateral formula bulk accoustic wave filter of improved pass-band performance
PCT/FI2012/051096 WO2013068652A1 (en) 2011-11-11 2012-11-09 Laterally coupled bulk acoustic wave filter with improved passband characteristics
US14/357,220 US9219466B2 (en) 2011-11-11 2012-11-09 Laterally coupled bulk acoustic wave filter with improved passband characteristics
JP2018052320A JP6564096B2 (en) 2011-11-11 2018-03-20 Transversely coupled bulk acoustic wave filter with improved passband characteristics

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20116113A FI124732B (en) 2011-11-11 2011-11-11 Lateral connected bulk wave filter with improved passband characteristics
FI20116113 2011-11-11

Publications (2)

Publication Number Publication Date
FI20116113A true FI20116113A (en) 2013-05-12
FI124732B FI124732B (en) 2014-12-31

Family

ID=48288592

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20116113A FI124732B (en) 2011-11-11 2011-11-11 Lateral connected bulk wave filter with improved passband characteristics

Country Status (7)

Country Link
US (1) US9219466B2 (en)
EP (1) EP2777153B1 (en)
JP (2) JP2015502065A (en)
KR (1) KR101977334B1 (en)
CN (1) CN104205632B (en)
FI (1) FI124732B (en)
WO (1) WO2013068652A1 (en)

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* Cited by examiner, † Cited by third party
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Also Published As

Publication number Publication date
EP2777153A4 (en) 2015-12-23
JP6564096B2 (en) 2019-08-21
EP2777153A1 (en) 2014-09-17
WO2013068652A1 (en) 2013-05-16
CN104205632A (en) 2014-12-10
KR101977334B1 (en) 2019-05-10
CN104205632B (en) 2017-03-01
US20140312994A1 (en) 2014-10-23
KR20140101773A (en) 2014-08-20
JP2018129839A (en) 2018-08-16
US9219466B2 (en) 2015-12-22
JP2015502065A (en) 2015-01-19
FI124732B (en) 2014-12-31
EP2777153B1 (en) 2021-08-18

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