FI121156B - Hiilinanonuppumolekyylin käyttö sähkömagneettisen säteilyn kanssa vuorovaikuttamiseksi laitteessa - Google Patents
Hiilinanonuppumolekyylin käyttö sähkömagneettisen säteilyn kanssa vuorovaikuttamiseksi laitteessa Download PDFInfo
- Publication number
- FI121156B FI121156B FI20085667A FI20085667A FI121156B FI 121156 B FI121156 B FI 121156B FI 20085667 A FI20085667 A FI 20085667A FI 20085667 A FI20085667 A FI 20085667A FI 121156 B FI121156 B FI 121156B
- Authority
- FI
- Finland
- Prior art keywords
- molecules
- molecule
- carbon nanotube
- carbon
- optical
- Prior art date
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- 230000005670 electromagnetic radiation Effects 0.000 title claims description 25
- 239000011852 carbon nanoparticle Substances 0.000 title claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 152
- 239000002041 carbon nanotube Substances 0.000 claims description 133
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 133
- 230000003287 optical effect Effects 0.000 claims description 70
- 238000010521 absorption reaction Methods 0.000 claims description 50
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical group C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 27
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- 230000003993 interaction Effects 0.000 claims description 12
- 239000002105 nanoparticle Substances 0.000 claims description 10
- 238000009738 saturating Methods 0.000 claims description 7
- 230000002745 absorbent Effects 0.000 claims description 4
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- 230000002441 reversible effect Effects 0.000 claims description 4
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- 239000002086 nanomaterial Substances 0.000 description 17
- 239000006096 absorbing agent Substances 0.000 description 14
- 229910003472 fullerene Inorganic materials 0.000 description 14
- 229920006395 saturated elastomer Polymers 0.000 description 14
- 239000011159 matrix material Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 11
- 230000005693 optoelectronics Effects 0.000 description 10
- 239000002071 nanotube Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000002646 carbon nanobud Substances 0.000 description 7
- 229910021394 carbon nanobud Inorganic materials 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 7
- 230000009021 linear effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 239000000835 fiber Substances 0.000 description 6
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- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000002114 nanocomposite Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 4
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- VNWKTOKETHGBQD-AKLPVKDBSA-N carbane Chemical compound [15CH4] VNWKTOKETHGBQD-AKLPVKDBSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
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- 235000012239 silicon dioxide Nutrition 0.000 description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
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- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
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- 238000006731 degradation reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
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- -1 e.g. Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
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- 239000012535 impurity Substances 0.000 description 2
- 238000012886 linear function Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
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- 239000010453 quartz Substances 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 208000035208 Ring chromosome 20 syndrome Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- 238000004061 bleaching Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000012018 catalyst precursor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
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- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
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- 239000000178 monomer Substances 0.000 description 1
- 239000002102 nanobead Substances 0.000 description 1
- 239000002101 nanobubble Substances 0.000 description 1
- 239000002625 nanobud Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920013655 poly(bisphenol-A sulfone) Polymers 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
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- 230000000541 pulsatile effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
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- 230000002829 reductive effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- SOUHUMACVWVDME-UHFFFAOYSA-N safranin O Chemical compound [Cl-].C12=CC(N)=CC=C2N=C2C=CC(N)=CC2=[N+]1C1=CC=CC=C1 SOUHUMACVWVDME-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
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- 239000012780 transparent material Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000005199 ultracentrifugation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/18—Nanoonions; Nanoscrolls; Nanohorns; Nanocones; Nanowalls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
- H10K85/225—Carbon nanotubes comprising substituents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06791—Fibre ring lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
- Carbon And Carbon Compounds (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20085667A FI121156B (fi) | 2008-06-27 | 2008-06-27 | Hiilinanonuppumolekyylin käyttö sähkömagneettisen säteilyn kanssa vuorovaikuttamiseksi laitteessa |
| TW098120921A TWI503582B (zh) | 2008-06-27 | 2009-06-23 | 富勒烯功能化管狀碳分子系光學裝置及其製造方法 |
| EP20090769439 EP2308112A4 (fr) | 2008-06-27 | 2009-06-26 | Utilisations d'une molécule de nano-bourgeon de carbone et dispositifs la comprenant |
| CA2727727A CA2727727A1 (fr) | 2008-06-27 | 2009-06-26 | Utilisations d'une molecule de nano-bourgeon de carbone et dispositifs la comprenant |
| PCT/FI2009/050578 WO2009156596A1 (fr) | 2008-06-27 | 2009-06-26 | Utilisations d'une molécule de nano-bourgeon de carbone et dispositifs la comprenant |
| BRPI0914688A BRPI0914688A2 (pt) | 2008-06-27 | 2009-06-26 | uso de uma molécula de nanobotão de carbono, e, dispositivo compreendendo uma molécula de nanobotão de carbono |
| US13/001,476 US8518726B2 (en) | 2008-06-27 | 2009-06-26 | Uses of a carbon nanobud molecule and devices comprising the same |
| KR1020117001533A KR20110028629A (ko) | 2008-06-27 | 2009-06-26 | 탄소 나노버드 분자의 용도 및 이를 포함하는 디바이스 |
| CN2009801246538A CN102077378B (zh) | 2008-06-27 | 2009-06-26 | 碳纳米芽分子的用途和包括碳纳米芽分子的器件 |
| JP2011515506A JP5571660B2 (ja) | 2008-06-27 | 2009-06-26 | カーボンナノバッド分子の使用およびこれを含む素子 |
| AU2009264099A AU2009264099B2 (en) | 2008-06-27 | 2009-06-26 | Uses of a carbon nanobud molecule and devices comprising the same |
| RU2011102050/28A RU2497237C2 (ru) | 2008-06-27 | 2009-06-26 | Применение молекулы углеродной нанопочки и устройства, включающие такие молекулы |
| HK11112533.6A HK1158364A1 (en) | 2008-06-27 | 2011-11-18 | Uses of a carbon nanobud molecule and devices comprising the same |
| JP2014055030A JP5702484B2 (ja) | 2008-06-27 | 2014-03-18 | カーボンナノバッド分子の使用およびこれを含む素子 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI20085667 | 2008-06-27 | ||
| FI20085667A FI121156B (fi) | 2008-06-27 | 2008-06-27 | Hiilinanonuppumolekyylin käyttö sähkömagneettisen säteilyn kanssa vuorovaikuttamiseksi laitteessa |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI20085667A0 FI20085667A0 (fi) | 2008-06-27 |
| FI20085667A FI20085667A (fi) | 2009-12-28 |
| FI121156B true FI121156B (fi) | 2010-07-30 |
Family
ID=39589428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI20085667A FI121156B (fi) | 2008-06-27 | 2008-06-27 | Hiilinanonuppumolekyylin käyttö sähkömagneettisen säteilyn kanssa vuorovaikuttamiseksi laitteessa |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US8518726B2 (fr) |
| EP (1) | EP2308112A4 (fr) |
| JP (2) | JP5571660B2 (fr) |
| KR (1) | KR20110028629A (fr) |
| CN (1) | CN102077378B (fr) |
| AU (1) | AU2009264099B2 (fr) |
| BR (1) | BRPI0914688A2 (fr) |
| CA (1) | CA2727727A1 (fr) |
| FI (1) | FI121156B (fr) |
| HK (1) | HK1158364A1 (fr) |
| RU (1) | RU2497237C2 (fr) |
| TW (1) | TWI503582B (fr) |
| WO (1) | WO2009156596A1 (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI120195B (fi) * | 2005-11-16 | 2009-07-31 | Canatu Oy | Hiilinanoputket, jotka on funktionalisoitu kovalenttisesti sidotuilla fullereeneilla, menetelmä ja laitteisto niiden tuottamiseksi ja niiden komposiitit |
| US10177314B2 (en) * | 2009-12-03 | 2019-01-08 | Nokia Technologies Oy | Apparatus, methods and devices |
| KR20140038411A (ko) * | 2011-04-15 | 2014-03-28 | 가부시키가이샤 간쿄우 에네루기 나노 기쥬츠 겡큐쇼 | 카본 나노 재료 제조 장치 및 그 이용 |
| US8785911B2 (en) * | 2011-06-23 | 2014-07-22 | International Business Machines Corporation | Graphene or carbon nanotube devices with localized bottom gates and gate dielectric |
| US8828762B2 (en) * | 2012-10-18 | 2014-09-09 | International Business Machines Corporation | Carbon nanostructure device fabrication utilizing protect layers |
| WO2014209148A1 (fr) * | 2013-06-24 | 2014-12-31 | Optogan-Organic Lightning Solutions, Llc (Optogan-Osr, Llc) | Diode électroluminescente organique pour une injection des porteurs de charge |
| JP6250490B2 (ja) * | 2014-07-17 | 2017-12-20 | 富士フイルム株式会社 | 導電性フィルム、タッチパネル付き表示装置 |
| US10636832B2 (en) * | 2016-02-21 | 2020-04-28 | Ramot At Tel-Aviv University Ltd. | System and method for sensing light |
| CN107682944B (zh) * | 2017-10-24 | 2020-09-08 | 张东升 | 一种半导体电热膜及其制备方法 |
| FI20176000A1 (en) * | 2017-11-08 | 2019-05-09 | Canatu Oy | Equipment comprising films with independent area |
| US10854740B2 (en) * | 2018-10-04 | 2020-12-01 | Florida State University Research Foundation, Inc. | Phase modulators based on ambipolar field-effect transistors |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6593166B1 (en) * | 1998-03-24 | 2003-07-15 | Silverbrook Research Pty Ltd | Method for construction of nanotube matrix material |
| EP1586146A4 (fr) | 2002-12-20 | 2006-02-01 | Alnaire Laboratoires Corp | Lasers a impulsions optiques |
| US7462774B2 (en) * | 2003-05-21 | 2008-12-09 | Nanosolar, Inc. | Photovoltaic devices fabricated from insulating nanostructured template |
| US7605327B2 (en) | 2003-05-21 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic devices fabricated from nanostructured template |
| FI121334B (fi) * | 2004-03-09 | 2010-10-15 | Canatu Oy | Menetelmä ja laitteisto hiilinanoputkien valmistamiseksi |
| GB2428135B (en) * | 2005-07-07 | 2010-04-21 | Univ Surrey | Improvements in thin film production |
| FI120195B (fi) * | 2005-11-16 | 2009-07-31 | Canatu Oy | Hiilinanoputket, jotka on funktionalisoitu kovalenttisesti sidotuilla fullereeneilla, menetelmä ja laitteisto niiden tuottamiseksi ja niiden komposiitit |
| FI20075767A0 (fi) * | 2007-10-30 | 2007-10-30 | Canatu Oy | Pinnoite ja sähkölaitteita jotka käsittävät tätä |
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2008
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2009
- 2009-06-23 TW TW098120921A patent/TWI503582B/zh not_active IP Right Cessation
- 2009-06-26 RU RU2011102050/28A patent/RU2497237C2/ru not_active IP Right Cessation
- 2009-06-26 WO PCT/FI2009/050578 patent/WO2009156596A1/fr active Application Filing
- 2009-06-26 BR BRPI0914688A patent/BRPI0914688A2/pt not_active IP Right Cessation
- 2009-06-26 EP EP20090769439 patent/EP2308112A4/fr not_active Withdrawn
- 2009-06-26 JP JP2011515506A patent/JP5571660B2/ja active Active
- 2009-06-26 CN CN2009801246538A patent/CN102077378B/zh active Active
- 2009-06-26 AU AU2009264099A patent/AU2009264099B2/en not_active Ceased
- 2009-06-26 CA CA2727727A patent/CA2727727A1/fr not_active Abandoned
- 2009-06-26 KR KR1020117001533A patent/KR20110028629A/ko not_active Application Discontinuation
- 2009-06-26 US US13/001,476 patent/US8518726B2/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| EP2308112A4 (fr) | 2012-07-25 |
| TW201003129A (en) | 2010-01-16 |
| JP5702484B2 (ja) | 2015-04-15 |
| KR20110028629A (ko) | 2011-03-21 |
| US8518726B2 (en) | 2013-08-27 |
| JP2011526699A (ja) | 2011-10-13 |
| US20110127488A1 (en) | 2011-06-02 |
| CN102077378B (zh) | 2013-06-05 |
| RU2011102050A (ru) | 2012-08-10 |
| EP2308112A1 (fr) | 2011-04-13 |
| JP5571660B2 (ja) | 2014-08-13 |
| AU2009264099B2 (en) | 2014-09-11 |
| CA2727727A1 (fr) | 2009-12-30 |
| FI20085667A0 (fi) | 2008-06-27 |
| RU2497237C2 (ru) | 2013-10-27 |
| JP2014167626A (ja) | 2014-09-11 |
| AU2009264099A1 (en) | 2009-12-30 |
| TWI503582B (zh) | 2015-10-11 |
| FI20085667A (fi) | 2009-12-28 |
| BRPI0914688A2 (pt) | 2015-10-20 |
| WO2009156596A1 (fr) | 2009-12-30 |
| CN102077378A (zh) | 2011-05-25 |
| HK1158364A1 (en) | 2012-07-13 |
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