ES8406006A1 - Perfeccionamientos introducidos en una instalacion de tratamiento de senales. - Google Patents

Perfeccionamientos introducidos en una instalacion de tratamiento de senales.

Info

Publication number
ES8406006A1
ES8406006A1 ES525112A ES525112A ES8406006A1 ES 8406006 A1 ES8406006 A1 ES 8406006A1 ES 525112 A ES525112 A ES 525112A ES 525112 A ES525112 A ES 525112A ES 8406006 A1 ES8406006 A1 ES 8406006A1
Authority
ES
Spain
Prior art keywords
transistor
high voltage
output terminal
voltage transients
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES525112A
Other languages
English (en)
Other versions
ES525112A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23634931&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES8406006(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by RCA Corp filed Critical RCA Corp
Publication of ES8406006A1 publication Critical patent/ES8406006A1/es
Publication of ES525112A0 publication Critical patent/ES525112A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00—Details of colour television systems
    • H04N9/64—Circuits for processing colour signals
    • H04N9/648—Video amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Picture Signal Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Details Of Television Scanning (AREA)

Abstract

PERFECCIONAMIENTOS INTRODUCIDOS EN UNA INSTALACION DE TRATAMIENTO DE SEÑALES.A TERMINALES DE ENTRADA DE SEÑAL SEPARADOS (13 Y 14) DE UN DISPOSITIVO (15) DE TRATAMIENTO DE SEÑALES DE LUMINANCIA Y CROMINANCIA INCLUIDO EN UN RECEPTOR DE TELEVISION, SON ENVIADAS SEÑALES DE LUMINANCIA PROCEDENTES DE UNA FUENTE (10) Y SEÑALES DE CROMINANCIA PROCEDENTES DE UNA FUENTE (12). EL DISPOSITIVO (15) COMBINA LAS SEÑALES DE LUMINANCIA Y CROMINANCIA Y GENERA IMAGEN DE COLOR ROJO (R), VERDE (G) Y AZUL (B) EN LOS TERMINALES DE SALIDA (21, 22, 23). LAS SEÑALES DE COLOR SON AMPLIFICADAS PORAMPLIFICADORES (24, 25 Y 26) DE ACTIVACION DE CINESCOPIO. ESTOS PROPORCIONAN SEÑALES DE VIDEO EN COLOR AMPLIFICADAS DE ALTO NIVEL A ELECTRODOS DE CATODO SEPARADOS DE CONTROL DE INTENSIDAD DE UN TUBO (30) DE IMAGEN EN COLOR. UNA FUENTE (35) DE ALIMENTACION DE TENSION DE FUNCIONAMIENTO GENERA UNA PLURALIDAD DE TENSIONES DE FUNCIONAMIENTO PARA EL CINESCOPIO (30).
ES525112A 1982-08-30 1983-08-23 Perfeccionamientos introducidos en una instalacion de tratamiento de senales. Granted ES525112A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/412,899 US4441137A (en) 1982-08-30 1982-08-30 High voltage protection for an output circuit

Publications (2)

Publication Number Publication Date
ES8406006A1 true ES8406006A1 (es) 1984-06-16
ES525112A0 ES525112A0 (es) 1984-06-16

Family

ID=23634931

Family Applications (1)

Application Number Title Priority Date Filing Date
ES525112A Granted ES525112A0 (es) 1982-08-30 1983-08-23 Perfeccionamientos introducidos en una instalacion de tratamiento de senales.

Country Status (13)

Country Link
US (1) US4441137A (es)
JP (1) JPH0744650B2 (es)
KR (1) KR910009429B1 (es)
AT (1) AT397896B (es)
AU (1) AU555327B2 (es)
CA (1) CA1180065A (es)
DE (1) DE3331075A1 (es)
ES (1) ES525112A0 (es)
FI (1) FI82328C (es)
FR (1) FR2532500B1 (es)
GB (1) GB2126446B (es)
HK (1) HK53389A (es)
IT (1) IT1170195B (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4870529A (en) * 1986-10-31 1989-09-26 Displaytek, Inc. Active arc protection circuit
US4841406A (en) * 1987-09-28 1989-06-20 North American Philips Consumer Electronics Corp. X-radiation protection circuit
JPH06217158A (ja) * 1993-01-13 1994-08-05 Sony Corp Ｃｒｔ保護回路
US5861736A (en) * 1994-12-01 1999-01-19 Texas Instruments Incorporated Circuit and method for regulating a voltage
JP2001184161A (ja) 1999-12-27 2001-07-06 Ricoh Co Ltd 情報入力方法、情報入力装置、筆記入力装置、筆記データ管理方法、表示制御方法、携帯型電子筆記装置および記録媒体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL255489A (es) * 1959-09-01
DE1283908B (de) * 1966-10-14 1968-11-28 Telefunken Patent UEberlastungsschutzschaltung fuer einen Transistorverstaerker in Emitterfolgerschaltung
US3882529A (en) * 1967-10-06 1975-05-06 Texas Instruments Inc Punch-through semiconductor diodes
GB1388544A (en) * 1971-04-27 1975-03-26 Rca Corp Video output amplifier
US3819952A (en) * 1973-01-29 1974-06-25 Mitsubishi Electric Corp Semiconductor device
US4133000A (en) * 1976-12-13 1979-01-02 General Motors Corporation Integrated circuit process compatible surge protection resistor
DE2659044C3 (de) * 1976-12-27 1981-07-16 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zum Schutz eines gegengekoppelten zweistufigen Verstärkers gegen Überlastung und Kurzschluß
US4106048A (en) * 1977-04-27 1978-08-08 Rca Corp. Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor
US4264941A (en) * 1979-02-14 1981-04-28 National Semiconductor Corporation Protective circuit for insulated gate field effect transistor integrated circuits
US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor
JPS6320222Y2 (es) * 1979-12-06 1988-06-06
US4302792A (en) * 1980-06-26 1981-11-24 Rca Corporation Transistor protection circuit
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device

Also Published As

Publication number Publication date
FI82328C (fi) 1991-02-11
FR2532500A1 (fr) 1984-03-02
IT8322643A1 (it) 1985-02-25
FR2532500B1 (fr) 1986-05-16
HK53389A (en) 1989-07-14
KR910009429B1 (ko) 1991-11-15
CA1180065A (en) 1984-12-27
AT397896B (de) 1994-07-25
DE3331075A1 (de) 1984-03-01
DE3331075C2 (es) 1987-11-12
GB8323062D0 (en) 1983-09-28
JPS5963888A (ja) 1984-04-11
FI833019A0 (fi) 1983-08-23
GB2126446A (en) 1984-03-21
FI833019A (fi) 1984-03-01
GB2126446B (en) 1986-01-08
US4441137A (en) 1984-04-03
IT8322643A0 (it) 1983-08-25
IT1170195B (it) 1987-06-03
AU1833083A (en) 1984-03-08
FI82328B (fi) 1990-10-31
KR840005951A (ko) 1984-11-19
ATA309883A (de) 1988-10-15
ES525112A0 (es) 1984-06-16
AU555327B2 (en) 1986-09-18
JPH0744650B2 (ja) 1995-05-15

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