ES8403246A1 - Metodo para formar lineas de marcacion con radiacion laser en celulas de silicio. - Google Patents

Metodo para formar lineas de marcacion con radiacion laser en celulas de silicio.

Info

Publication number
ES8403246A1
ES8403246A1 ES519819A ES519819A ES8403246A1 ES 8403246 A1 ES8403246 A1 ES 8403246A1 ES 519819 A ES519819 A ES 519819A ES 519819 A ES519819 A ES 519819A ES 8403246 A1 ES8403246 A1 ES 8403246A1
Authority
ES
Spain
Prior art keywords
cell
grid structure
laser scribing
silicon cells
dendrite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES519819A
Other languages
English (en)
Other versions
ES519819A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of ES8403246A1 publication Critical patent/ES8403246A1/es
Publication of ES519819A0 publication Critical patent/ES519819A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/035—Aligning the laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PROCEDIMIENTO PARA FORMAR LINEAS DE MERCACION CON RADIACION LASER EN CELULAS DE SILICIO.EL PROCEDIMIENTO TIENE POR OBJETO FORMAR UN DIBUJO EN LA PARTE POSTERIOR DE LAS CELULAS, DEL TIPO DE HOJA DENDRITICA, QUE TIENEN EN SU PARTE DELANTERA UNA ESTRUCTURA DE REJA, CON EL FIN DE OBTENER CELULAS DE LONGITUD Y ANCHURA UNIFORMES Y ELIMINAR DE LAS MISMAS LAS DENDRITAS. CONSISTE BASICAMENTE EN: ALINEAR LAS CELULAS ENCIMA DE UN DIBUJO CON LINEAS DE REFERENCIA RELACIONADAS PERPENDICULARMENTE; Y FORMAR MARCAS CON RADIACION LASER EN LA CARA POSTERIOR DE LA CELULA SIGUIENDOEL CITADO DIBUJO.
ES519819A 1982-02-17 1983-02-15 Metodo para formar lineas de marcacion con radiacion laser en celulas de silicio. Granted ES519819A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/349,570 US4443685A (en) 1982-02-17 1982-02-17 Fixture for laser scribing (of dendrite silicon cells)

Publications (2)

Publication Number Publication Date
ES8403246A1 true ES8403246A1 (es) 1984-03-01
ES519819A0 ES519819A0 (es) 1984-03-01

Family

ID=23372970

Family Applications (2)

Application Number Title Priority Date Filing Date
ES519819A Granted ES519819A0 (es) 1982-02-17 1983-02-15 Metodo para formar lineas de marcacion con radiacion laser en celulas de silicio.
ES525804A Expired ES8406001A1 (es) 1982-02-17 1983-09-21 Aparato para mantener y alinear una celula de silicio del tipo de hoja dendritica

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES525804A Expired ES8406001A1 (es) 1982-02-17 1983-09-21 Aparato para mantener y alinear una celula de silicio del tipo de hoja dendritica

Country Status (6)

Country Link
US (1) US4443685A (es)
EP (1) EP0086666A2 (es)
JP (1) JPS58155777A (es)
AU (1) AU1079183A (es)
ES (2) ES519819A0 (es)
IN (1) IN157403B (es)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4594471A (en) * 1983-07-13 1986-06-10 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US4705698A (en) * 1986-10-27 1987-11-10 Chronar Corporation Isolation of semiconductor contacts
US4875461A (en) * 1988-04-01 1989-10-24 Westinghouse Electric Corp. Automatic dendritic silicon web separation machine
US5753887A (en) * 1995-05-16 1998-05-19 Engraving Technologies, Inc. Apparatus for laser engraving indicia on gemstones
US20080105303A1 (en) * 2003-01-03 2008-05-08 Bp Corporation North America Inc. Method and Manufacturing Thin Film Photovoltaic Modules
US8263899B2 (en) * 2010-07-01 2012-09-11 Sunpower Corporation High throughput solar cell ablation system
WO2014022681A1 (en) 2012-08-01 2014-02-06 Gentex Corporation Assembly with laser induced channel edge and method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916510A (en) * 1974-07-01 1975-11-04 Us Navy Method for fabricating high efficiency semi-planar electro-optic modulators
US4273950A (en) * 1979-05-29 1981-06-16 Photowatt International, Inc. Solar cell and fabrication thereof using microwaves
US4345967A (en) * 1980-03-04 1982-08-24 Cook Melvin S Method of producing thin single-crystal sheets
US4311870A (en) * 1980-09-11 1982-01-19 Nasa Efficiency of silicon solar cells containing chromium

Also Published As

Publication number Publication date
US4443685A (en) 1984-04-17
IN157403B (es) 1986-03-22
AU1079183A (en) 1983-08-25
EP0086666A2 (en) 1983-08-24
ES525804A0 (es) 1984-06-16
ES8406001A1 (es) 1984-06-16
JPS58155777A (ja) 1983-09-16
ES519819A0 (es) 1984-03-01

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