ES8300884A1 - Procedimiento y aparato para formar al menos una cinta de material monocristalino de una masa fundida - Google Patents
Procedimiento y aparato para formar al menos una cinta de material monocristalino de una masa fundidaInfo
- Publication number
- ES8300884A1 ES8300884A1 ES504820A ES504820A ES8300884A1 ES 8300884 A1 ES8300884 A1 ES 8300884A1 ES 504820 A ES504820 A ES 504820A ES 504820 A ES504820 A ES 504820A ES 8300884 A1 ES8300884 A1 ES 8300884A1
- Authority
- ES
- Spain
- Prior art keywords
- melt
- ribbon
- monocrystalline ribbon
- level
- drawing monocrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PROCEDIMIENTO Y APARATO PARA FORMA AL MENOS UNA CINTA DE MATERIAL MONOCRISTALINO DE UNA MASA FUNDIDA. SE FORMA UNA MASA FUNDIDA (7) DE MATERIAL EN UN RECIPIENTE (1) ALREDEDOR DE TODA LA SUPERFICIE DE UN TROQUEL DE CONFORMACION (9) CONECTABLE, QUE COMPRENDE AL MENOS DOS ELEMENTOS SEPARADOS (15, 17) QUE TIENEN CADA UNO UNA PARTE (15B, 17B) POR DEBAJO DEL NIVEL DEL MATERIAL FUNDIDO EN EL RECIPIENTE, Y OTRA PARTE (15A, 17A) SITUADA POR ENCIMA DEL MISMO EN UNA ALTURA SUFICIENTE PARA FORMAR UN MENISCO (19) ELEVADO DE MASA FUNDIDA ALREDEDOR DEL ELEMENTO CORRESPONDIENTE. LA CINTA DE SIEMBRA (11) SE COLOCA ENTRE LOS ELEMENTOS SEPARADOS Y SE HACE DESCENDER HASTA QUE UN EXTREMO (10) SE PONE EN CONTACTO CON LA SUPERFICIE DE MASA FUNDIDA, RETIRANDOSE ENTONCES LENTAMENTE Y PRODUCIENDOSE UN CINTA MONOCRISTALINA DE MATERIAL FUNDIDO.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/179,919 US4299648A (en) | 1980-08-20 | 1980-08-20 | Method and apparatus for drawing monocrystalline ribbon from a melt |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8300884A1 true ES8300884A1 (es) | 1982-11-01 |
ES504820A0 ES504820A0 (es) | 1982-11-01 |
Family
ID=22658519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES504820A Granted ES504820A0 (es) | 1980-08-20 | 1981-08-19 | Procedimiento y aparato para formar al menos una cinta de material monocristalino de una masa fundida |
Country Status (9)
Country | Link |
---|---|
US (1) | US4299648A (es) |
JP (1) | JPS5771896A (es) |
CA (1) | CA1172146A (es) |
DE (1) | DE3132621A1 (es) |
ES (1) | ES504820A0 (es) |
FR (1) | FR2488916A1 (es) |
GB (1) | GB2082472A (es) |
IL (1) | IL63537A (es) |
IT (1) | IT1139408B (es) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4469552A (en) * | 1982-04-23 | 1984-09-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Process and apparatus for growing a crystal ribbon |
FR2550965B1 (fr) * | 1983-08-30 | 1985-10-11 | Comp Generale Electricite | Dispositif pour deposer une couche de silicium polycristallin sur un ruban de carbone |
FR2568490B1 (fr) * | 1984-08-02 | 1986-12-05 | Comp Generale Electricite | Procede et dispositif pour deposer une couche de silicium polycristallin sur un ruban de carbone |
JPS62183855A (ja) * | 1986-02-10 | 1987-08-12 | Nippon Steel Corp | 自動車排ガス浄化装置用基体の製造法 |
US4721688A (en) * | 1986-09-18 | 1988-01-26 | Mobil Solar Energy Corporation | Method of growing crystals |
US5037622A (en) * | 1990-07-13 | 1991-08-06 | Mobil Solar Energy Corporation | Wet-tip die for EFG crystal growth apparatus |
JP4527538B2 (ja) * | 2002-10-18 | 2010-08-18 | エバーグリーン ソーラー, インコーポレイテッド | 結晶成長のための方法および装置 |
JP2004204299A (ja) * | 2002-12-25 | 2004-07-22 | Ebara Corp | ダイヤモンド成膜シリコンおよび電極 |
FR2884834B1 (fr) * | 2005-04-22 | 2007-06-08 | Solarforce Soc Par Actions Sim | Procede de tirage de rubans de semi-conducteur de faible epaisseur |
DE102009003350C5 (de) * | 2009-01-14 | 2017-02-09 | Reicat Gmbh | Verfahren und Vorrichtung zur Abtrennung von Argon aus einem Gasgemisch |
DE102009044249B3 (de) * | 2009-10-14 | 2011-06-30 | ReiCat GmbH, 63571 | Verfahren und Vorrichtung zur Abtrennung von Argon aus einem Gasgemisch |
CN104499045B (zh) * | 2014-12-31 | 2017-04-19 | 华中科技大学 | 一种泡生法蓝宝石晶体生长炉 |
US11713519B1 (en) * | 2021-02-08 | 2023-08-01 | Sapphire Systems, Inc. | Integrated crucible and die system for sapphire sheet growing |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE562704A (es) * | 1956-11-28 | |||
NL229533A (es) * | 1958-07-11 | |||
US3096158A (en) * | 1959-09-25 | 1963-07-02 | Gerthart K Gaule | Apparatus for pulling single crystals in the form of long flat strips from a melt |
US3129061A (en) * | 1961-03-27 | 1964-04-14 | Westinghouse Electric Corp | Process for producing an elongated unitary body of semiconductor material crystallizing in the diamond cubic lattice structure and the product so produced |
DE1245318B (de) * | 1963-11-16 | 1967-07-27 | Siemens Ag | Vorrichtung zum Herstellen von Kristallen durch Ziehen aus der Schmelze |
US3687633A (en) * | 1970-08-28 | 1972-08-29 | Tyco Laboratories Inc | Apparatus for growing crystalline bodies from the melt |
US3755011A (en) * | 1972-06-01 | 1973-08-28 | Rca Corp | Method for depositing an epitaxial semiconductive layer from the liquid phase |
US4000030A (en) * | 1975-06-09 | 1976-12-28 | International Business Machines Corporation | Method for drawing a monocrystal from a melt formed about a wettable projection |
SU612796A1 (ru) * | 1975-08-22 | 1978-06-19 | Научно-Исследовательский И Конструкторско-Технологический Институт Эмалированного Химического Оборудования | Формующее устройство ленточного пресса дл пластического формовани |
US4075055A (en) * | 1976-04-16 | 1978-02-21 | International Business Machines Corporation | Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal |
DE2700994C2 (de) * | 1976-04-16 | 1986-02-06 | International Business Machines Corp., Armonk, N.Y. | Verfahren und Vorrichtung zum Ziehen von kristallinen Siliciumkörpern |
US4121965A (en) * | 1976-07-16 | 1978-10-24 | The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration | Method of controlling defect orientation in silicon crystal ribbon growth |
-
1980
- 1980-08-20 US US06/179,919 patent/US4299648A/en not_active Expired - Lifetime
-
1981
- 1981-08-03 GB GB8123701A patent/GB2082472A/en not_active Withdrawn
- 1981-08-05 CA CA000383254A patent/CA1172146A/en not_active Expired
- 1981-08-10 IL IL63537A patent/IL63537A/xx unknown
- 1981-08-18 DE DE19813132621 patent/DE3132621A1/de not_active Ceased
- 1981-08-19 ES ES504820A patent/ES504820A0/es active Granted
- 1981-08-19 JP JP56130053A patent/JPS5771896A/ja active Granted
- 1981-08-20 IT IT23588/81A patent/IT1139408B/it active
- 1981-08-20 FR FR8116010A patent/FR2488916A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2488916B1 (es) | 1984-07-27 |
IL63537A (en) | 1985-01-31 |
GB2082472A (en) | 1982-03-10 |
DE3132621A1 (de) | 1982-07-01 |
IL63537A0 (en) | 1981-11-30 |
IT8123588A0 (it) | 1981-08-20 |
CA1172146A (en) | 1984-08-07 |
US4299648A (en) | 1981-11-10 |
JPH0139998B2 (es) | 1989-08-24 |
IT1139408B (it) | 1986-09-24 |
JPS5771896A (en) | 1982-05-04 |
ES504820A0 (es) | 1982-11-01 |
FR2488916A1 (fr) | 1982-02-26 |
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