ES529781A0 - Una memoria electronica de almacenamiento de datos - Google Patents
Una memoria electronica de almacenamiento de datosInfo
- Publication number
- ES529781A0 ES529781A0 ES529781A ES529781A ES529781A0 ES 529781 A0 ES529781 A0 ES 529781A0 ES 529781 A ES529781 A ES 529781A ES 529781 A ES529781 A ES 529781A ES 529781 A0 ES529781 A0 ES 529781A0
- Authority
- ES
- Spain
- Prior art keywords
- data storage
- electronic memory
- electronic
- memory
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000013500 data storage Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/485,808 US4574365A (en) | 1983-04-18 | 1983-04-18 | Shared access lines memory cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES8501558A1 ES8501558A1 (es) | 1984-11-16 |
| ES529781A0 true ES529781A0 (es) | 1984-11-16 |
Family
ID=23929516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES529781A Granted ES529781A0 (es) | 1983-04-18 | 1984-02-16 | Una memoria electronica de almacenamiento de datos |
Country Status (8)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4648073A (en) * | 1984-12-31 | 1987-03-03 | International Business Machines Corporation | Sequential shared access lines memory cells |
| US4907283A (en) * | 1987-03-13 | 1990-03-06 | Canon Kabushiki Kaisha | Image processing apparatus |
| EP0735540B1 (en) * | 1995-03-31 | 2002-06-19 | Infineon Technologies AG | Low power sense amplifier for gain memory cells |
| US6282115B1 (en) | 1999-12-22 | 2001-08-28 | International Business Machines Corporation | Multi-level DRAM trench store utilizing two capacitors and two plates |
| US6580650B2 (en) | 2001-03-16 | 2003-06-17 | International Business Machines Corporation | DRAM word line voltage control to insure full cell writeback level |
| US7317641B2 (en) * | 2005-06-20 | 2008-01-08 | Sandisk Corporation | Volatile memory cell two-pass writing method |
| US7764549B2 (en) * | 2005-06-20 | 2010-07-27 | Sandisk 3D Llc | Floating body memory cell system and method of manufacture |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US419095A (en) * | 1890-01-07 | Corn-planter | ||
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
| US3893087A (en) * | 1974-02-08 | 1975-07-01 | Gen Instrument Corp | Random access memory with shared column conductors |
| US3979734A (en) * | 1975-06-16 | 1976-09-07 | International Business Machines Corporation | Multiple element charge storage memory cell |
| US4086662A (en) * | 1975-11-07 | 1978-04-25 | Hitachi, Ltd. | Memory system with read/write control lines |
| US4040017A (en) * | 1976-03-31 | 1977-08-02 | International Business Machines Corporation | Injected charge capacitor memory |
| US4080590A (en) * | 1976-03-31 | 1978-03-21 | International Business Machines Corporation | Capacitor storage memory |
| US4040016A (en) * | 1976-03-31 | 1977-08-02 | International Business Machines Corporation | Twin nodes capacitance memory |
| JPS5951074B2 (ja) * | 1980-03-28 | 1984-12-12 | 富士通株式会社 | 半導体記憶装置 |
-
1983
- 1983-04-18 US US06/485,808 patent/US4574365A/en not_active Expired - Lifetime
- 1983-11-30 JP JP58224568A patent/JPS59195397A/ja active Granted
-
1984
- 1984-02-16 ES ES529781A patent/ES529781A0/es active Granted
- 1984-03-16 EP EP84102895A patent/EP0128273B1/en not_active Expired
- 1984-03-16 DE DE8484102895T patent/DE3478882D1/de not_active Expired
- 1984-04-16 CA CA000452130A patent/CA1213981A/en not_active Expired
- 1984-04-17 BR BR8401795A patent/BR8401795A/pt not_active IP Right Cessation
- 1984-04-18 AU AU27069/84A patent/AU560391B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| AU560391B2 (en) | 1987-04-02 |
| EP0128273B1 (en) | 1989-07-05 |
| CA1213981A (en) | 1986-11-12 |
| DE3478882D1 (en) | 1989-08-10 |
| JPS59195397A (ja) | 1984-11-06 |
| JPH0355911B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-08-26 |
| US4574365A (en) | 1986-03-04 |
| AU2706984A (en) | 1984-10-25 |
| EP0128273A2 (en) | 1984-12-19 |
| EP0128273A3 (en) | 1986-12-17 |
| BR8401795A (pt) | 1984-12-04 |
| ES8501558A1 (es) | 1984-11-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 19981103 |