ES392672A1 - Process for making windowless nip structure semiconductor particle detectors and the detectors thus made - Google Patents

Process for making windowless nip structure semiconductor particle detectors and the detectors thus made

Info

Publication number
ES392672A1
ES392672A1 ES392672A ES392672A ES392672A1 ES 392672 A1 ES392672 A1 ES 392672A1 ES 392672 A ES392672 A ES 392672A ES 392672 A ES392672 A ES 392672A ES 392672 A1 ES392672 A1 ES 392672A1
Authority
ES
Spain
Prior art keywords
detectors
windowless
making
semiconductor particle
structure semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES392672A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of ES392672A1 publication Critical patent/ES392672A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H01L31/1175—Li compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Improvements in the manufacture of semi-conductor particle detectors of NIP structures, characterized in that the N zone of a diffused NIP detector is rubbed and migrated to classical lithium, because a metallic layer is deposited by vacuum evaporation on the remaining IP sample only on intrinsic zone I, and because lithium ions are implanted, in said intrinsic zone through said metallic layer. (Machine-translation by Google Translate, not legally binding)
ES392672A 1970-06-26 1971-06-26 Process for making windowless nip structure semiconductor particle detectors and the detectors thus made Expired ES392672A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7023817A FR2094616A5 (en) 1970-06-26 1970-06-26

Publications (1)

Publication Number Publication Date
ES392672A1 true ES392672A1 (en) 1975-04-16

Family

ID=9057886

Family Applications (1)

Application Number Title Priority Date Filing Date
ES392672A Expired ES392672A1 (en) 1970-06-26 1971-06-26 Process for making windowless nip structure semiconductor particle detectors and the detectors thus made

Country Status (7)

Country Link
BE (1) BE768570A (en)
CH (1) CH546412A (en)
DE (1) DE2131755C3 (en)
ES (1) ES392672A1 (en)
FR (1) FR2094616A5 (en)
GB (1) GB1320834A (en)
IT (1) IT939723B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2909564C2 (en) * 1979-03-12 1981-01-08 Geraetewerk Lahr Gmbh, 7630 Lahr Device for vibration reduction in a record player

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413528A (en) * 1966-03-03 1968-11-26 Atomic Energy Commission Usa Lithium drifted semiconductor radiation detector
US3413529A (en) * 1966-03-08 1968-11-26 Atomic Energy Commission Usa A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions
FR1532346A (en) * 1967-04-12 1968-07-12 Centre Nat Rech Scient Improvements to nuclear radiation detectors, of the n-i-p diode type

Also Published As

Publication number Publication date
CH546412A (en) 1974-02-28
DE2131755B2 (en) 1974-10-17
GB1320834A (en) 1973-06-20
IT939723B (en) 1973-02-10
DE2131755A1 (en) 1972-01-20
BE768570A (en) 1971-11-03
FR2094616A5 (en) 1972-02-04
DE2131755C3 (en) 1975-06-12

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