FR2094616A5 - - Google Patents
Info
- Publication number
- FR2094616A5 FR2094616A5 FR7023817A FR7023817A FR2094616A5 FR 2094616 A5 FR2094616 A5 FR 2094616A5 FR 7023817 A FR7023817 A FR 7023817A FR 7023817 A FR7023817 A FR 7023817A FR 2094616 A5 FR2094616 A5 FR 2094616A5
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
- H01L31/1175—Li compensated PIN gamma-ray detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7023817A FR2094616A5 (en) | 1970-06-26 | 1970-06-26 | |
CH866971A CH546412A (en) | 1970-06-26 | 1971-06-14 | PROCESS FOR MANUFACTURING A SEMICONDUCTOR PARTICLE DETECTOR WITH A PIN STRUCTURE AND DETECTOR OBTAINED BY IMPLEMENTATION OF THIS PROCESS. |
BE768570A BE768570A (en) | 1970-06-26 | 1971-06-16 | PROCESS FOR MANUFACTURING SEMICONDUCTOR PARTICLE DETECTORS WITH PIN STRUCTURE WITHOUT DEAD ZONE AND DETECTORS OBTAINED ACCORDING TO THIS PROCEDURE |
GB2926171A GB1320834A (en) | 1970-06-26 | 1971-06-22 | Process for making windowless nip structure semiconductor particle detectors and the detectors thus made |
DE19712131755 DE2131755C3 (en) | 1970-06-26 | 1971-06-25 | Process for the production of a semiconductor particle detector with NIP structure and use of detectors produced therefrom |
IT6917471A IT939723B (en) | 1970-06-26 | 1971-06-25 | PROCEDURE FOR THE MANUFACTURE OF SEMI-CONDUCTIVE PARTICLE DETECTORS WITH NO DEAD ZONE NIP STRUCTURE AND DETECTOR OBTAINED WITH THE PROCEDURE |
ES392672A ES392672A1 (en) | 1970-06-26 | 1971-06-26 | Process for making windowless nip structure semiconductor particle detectors and the detectors thus made |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7023817A FR2094616A5 (en) | 1970-06-26 | 1970-06-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2094616A5 true FR2094616A5 (en) | 1972-02-04 |
Family
ID=9057886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7023817A Expired FR2094616A5 (en) | 1970-06-26 | 1970-06-26 |
Country Status (7)
Country | Link |
---|---|
BE (1) | BE768570A (en) |
CH (1) | CH546412A (en) |
DE (1) | DE2131755C3 (en) |
ES (1) | ES392672A1 (en) |
FR (1) | FR2094616A5 (en) |
GB (1) | GB1320834A (en) |
IT (1) | IT939723B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2909564C2 (en) * | 1979-03-12 | 1981-01-08 | Geraetewerk Lahr Gmbh, 7630 Lahr | Device for vibration reduction in a record player |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3413528A (en) * | 1966-03-03 | 1968-11-26 | Atomic Energy Commission Usa | Lithium drifted semiconductor radiation detector |
US3413529A (en) * | 1966-03-08 | 1968-11-26 | Atomic Energy Commission Usa | A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions |
GB1188418A (en) * | 1967-04-12 | 1970-04-15 | Centre Nat Rech Scient | Improvements in the Preparation of Semiconductor Nuclear Radiation Detectors |
-
1970
- 1970-06-26 FR FR7023817A patent/FR2094616A5/fr not_active Expired
-
1971
- 1971-06-14 CH CH866971A patent/CH546412A/en not_active IP Right Cessation
- 1971-06-16 BE BE768570A patent/BE768570A/en not_active IP Right Cessation
- 1971-06-22 GB GB2926171A patent/GB1320834A/en not_active Expired
- 1971-06-25 DE DE19712131755 patent/DE2131755C3/en not_active Expired
- 1971-06-25 IT IT6917471A patent/IT939723B/en active
- 1971-06-26 ES ES392672A patent/ES392672A1/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3413528A (en) * | 1966-03-03 | 1968-11-26 | Atomic Energy Commission Usa | Lithium drifted semiconductor radiation detector |
US3413529A (en) * | 1966-03-08 | 1968-11-26 | Atomic Energy Commission Usa | A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions |
GB1188418A (en) * | 1967-04-12 | 1970-04-15 | Centre Nat Rech Scient | Improvements in the Preparation of Semiconductor Nuclear Radiation Detectors |
Also Published As
Publication number | Publication date |
---|---|
CH546412A (en) | 1974-02-28 |
DE2131755C3 (en) | 1975-06-12 |
ES392672A1 (en) | 1975-04-16 |
IT939723B (en) | 1973-02-10 |
DE2131755A1 (en) | 1972-01-20 |
GB1320834A (en) | 1973-06-20 |
DE2131755B2 (en) | 1974-10-17 |
BE768570A (en) | 1971-11-03 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CL | Concession to grant licenses |