ES359589A1 - Improvements in the provisions of semiconductors. (Machine-translation by Google Translate, not legally binding) - Google Patents

Improvements in the provisions of semiconductors. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES359589A1
ES359589A1 ES359589A ES359589A ES359589A1 ES 359589 A1 ES359589 A1 ES 359589A1 ES 359589 A ES359589 A ES 359589A ES 359589 A ES359589 A ES 359589A ES 359589 A1 ES359589 A1 ES 359589A1
Authority
ES
Spain
Prior art keywords
semiconductor
contact
semiconductors
translation
legally binding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES359589A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Publication of ES359589A1 publication Critical patent/ES359589A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
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    • H01L2924/01046—Palladium [Pd]
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    • H01L2924/01047—Silver [Ag]
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    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
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    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/0106—Neodymium [Nd]
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    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
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    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
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    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
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    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01088—Radium [Ra]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Abstract

Improvements in the arrangements of semiconductors, in particular semiconductor arrangements with a disk with a large area of semiconductor material joined by its surface by fixed welding, preferably through contact discs with a linear coefficient of thermal expansion approximately equivalent to that of the material semiconductor, to metallic elements that serve for the conduction of the current and/or for the derivation of the heat of the losses, characterized in that surfaces of contact, corresponding to each other and to join by welding, of successive contact elements of a layer structure arbitrarily present at least one ductile metal layer of predetermined thickness, preferably of noble metal, and because the ductile metal layer, together with a semiconductor weld of high mechanical strength, in itself known, forms a succession of contact layers for absorb and to compensate tens mechanical ions produced by the operation and with it for the obtaining of an optimum resistance to the changes of temperature. (Machine-translation by Google Translate, not legally binding)
ES359589A 1967-11-15 1968-10-14 Improvements in the provisions of semiconductors. (Machine-translation by Google Translate, not legally binding) Expired ES359589A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1614653A DE1614653C3 (en) 1967-11-15 1967-11-15 Semiconductor arrangement with high current carrying capacity

Publications (1)

Publication Number Publication Date
ES359589A1 true ES359589A1 (en) 1970-06-01

Family

ID=7532059

Family Applications (1)

Application Number Title Priority Date Filing Date
ES359589A Expired ES359589A1 (en) 1967-11-15 1968-10-14 Improvements in the provisions of semiconductors. (Machine-translation by Google Translate, not legally binding)

Country Status (2)

Country Link
DE (1) DE1614653C3 (en)
ES (1) ES359589A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930306A (en) * 1974-04-24 1976-01-06 General Instrument Corporation Process for attaching a lead member to a semiconductor device
DE3147790A1 (en) * 1981-12-03 1983-06-09 Brown, Boveri & Cie Ag, 6800 Mannheim Power module and method of producing it
DE4204436A1 (en) * 1992-02-14 1993-08-19 Daimler Benz Ag Semiconductor device mfr. from thin foil - using semiconductor supports during foil growth and structuring operations
DE202018103357U1 (en) 2018-06-14 2018-07-04 Beurer Gmbh Body brush with removable handle

Also Published As

Publication number Publication date
DE1614653C3 (en) 1979-06-21
DE1614653B2 (en) 1973-04-12
DE1614653A1 (en) 1972-03-23

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