GB815289A - Improvements in rectifiers utilising semi-conducting material - Google Patents

Improvements in rectifiers utilising semi-conducting material

Info

Publication number
GB815289A
GB815289A GB3284954A GB3284954A GB815289A GB 815289 A GB815289 A GB 815289A GB 3284954 A GB3284954 A GB 3284954A GB 3284954 A GB3284954 A GB 3284954A GB 815289 A GB815289 A GB 815289A
Authority
GB
United Kingdom
Prior art keywords
sealed
slab
annuli
annulus
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3284954A
Inventor
Thomas Hilary Kinman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Thomson Houston Co Ltd
Original Assignee
British Thomson Houston Co Ltd
Filing date
Publication date
Application filed by British Thomson Houston Co Ltd filed Critical British Thomson Houston Co Ltd
Priority to FR1143136D priority Critical patent/FR1143136A/en
Publication of GB815289A publication Critical patent/GB815289A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Abstract

815,289. PN-junction rectifiers. BRITISH THOMSON-HOUSTON CO. Ltd. Nov. 9, 1955 [Nov. 12, 1954], No. 32849/54. Class 37. An hermetically sealed rectifier (Fig. 1) comprises a slab 1 of e.g. Ge or Si containing a PN junction mounted between and in electrically conductive contact with conductive members 2, 3, e.g. of Cu, which are respectively sealed to the inner peripheries of metal annuli 10, 8, the member 3 being insulated from annulus 8. The annuli, e.g. of Cu, are sealed together at their outer edges. In the embodiment member 3 is hermetically sealed to ceramic ring 5, annulus 8 sealed to disc 5 and ceramic ring 9 (or two half rings) is hermetically sealed over the annulus to ring 5 to form a sub assembly. A second sub assembly is formed by welding annulus 10 to the flange 7 of member 2. The sub assemblies are brought together with the semi-conductor slab 1 between them and heated to join the slab to members 2 and 3 which are each provided with a soft solder layer. The rims of the annuli are then soldered or hot or cold welded together to form a sealed unit. The sealing may be done in an appropriate atmosphere if gas filling is required, or the enclosure may be evacuated after sealing through a suitably mounted tubule. The annuli prevent undue heating of the slab in sealing and assist in cooling during operation.
GB3284954A 1954-11-12 1954-11-12 Improvements in rectifiers utilising semi-conducting material Expired GB815289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1143136D FR1143136A (en) 1954-11-12 1955-11-10 Sealed Enclosed Semiconductor Rectifier

Publications (1)

Publication Number Publication Date
GB815289A true GB815289A (en) 1959-06-24

Family

ID=1743192

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3284954A Expired GB815289A (en) 1954-11-12 1954-11-12 Improvements in rectifiers utilising semi-conducting material

Country Status (1)

Country Link
GB (1) GB815289A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1194503B (en) * 1960-04-29 1965-06-10 Silec Liaisons Elec Semiconductor diode and process for its manufacture
DE1200951B (en) * 1959-12-16 1965-09-16 Sony Corp Semiconductor device
DE1271839B (en) * 1963-06-15 1968-07-04 Siemens Ag Housing for a semiconductor component in disk cell design

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1200951B (en) * 1959-12-16 1965-09-16 Sony Corp Semiconductor device
DE1194503B (en) * 1960-04-29 1965-06-10 Silec Liaisons Elec Semiconductor diode and process for its manufacture
DE1271839B (en) * 1963-06-15 1968-07-04 Siemens Ag Housing for a semiconductor component in disk cell design

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